混合集成电路(HIC)用硅封装剂的评价

A. Christou
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引用次数: 3

摘要

研究了一种硅酮密封剂在防止迁移金电阻短路(MGRS)方面的有效性。使用-10°C至+100°C的温度循环,在Cl-、1-、K+和Na+离子污染的环境中,在0.9至1.2% V/V的湿度水平下观察到MGRS的形成。结果表明,水分子和卤素、Na+和K+离子将很容易通过硅酮材料传递。当水和离子水平超过临界值时,树突生长就会发生。描述了一种测量水分通过密封剂渗透动力学的技术。该方法包括利用水分。在候选混合封装内粘合的crosensor;随后进行微点AES、EDXA离子污染分析。将混合湿度微传感器的测试结果与热二氧化硅表面电流测量得到的动力学数据进行了比较。总结了在Na, I, K, Cl, S离子存在下测量的水分和离子污染水平以及MGRS的形成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Assessment of Silicone Encapsulants for Hybrid Integrated Circuits (HIC)
A silicone encapsulant has been investigated as to its effectiveness in preventing migrated gold resistive shorts (MGRS). Using a temperature cycle of -10°C to +100°C, MGRS formation was observed at moisture levels of 0.9 to 1.2 percent V/V for Cl-, 1-, K+, and Na+ion contaminated environments. The results indicate that water molecules and halogen, Na+and K+ions will be readily transmitted through the silicone material. Dendritic growth has been found to occur when threshold water and ion levels were exceeded. A technique for measuring the kinetics Of moisture penetration through encapsulants is described. The method consists of utilizing moisture mi-. crosensors bonded within the candidate hybrid package; followed by microspot AES, EDXA analysis of ionic contamination. The test results from the hybrid moisture microsensors are compared with kinetics data' obtained by measuring surface currents on .thermal SiO 2 . Measured moisture and ionic contamination levels and the formation of MGRS in the presence of Na, I, K, Cl, S ions are summarized.
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