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2022 International Semiconductor Conference (CAS)最新文献

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Validation Technique for Thin Oxide CDM Protections 薄氧化物CDM保护的验证技术
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934740
Mihaela-Daniela Dobre, P. Coll, G. Brezeanu
{"title":"Validation Technique for Thin Oxide CDM Protections","authors":"Mihaela-Daniela Dobre, P. Coll, G. Brezeanu","doi":"10.1109/CAS56377.2022.9934740","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934740","url":null,"abstract":"This paper describes a validation technique that permits the evaluation of the Charge Device Model Electrostatic Discharge (CDM-ESD) in case of long metal interconnection between driver-receiver pair. The problem statement and verification approach are illustrated. A fully defined method that will help the prevention of the CDM-ESD event, with emphasis on future steps to detect the failures for 28nm technology thin-oxide devices is reported.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114993194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiC structural characterization by non destructive near-field microscopy techniques 非破坏性近场显微技术表征碳化硅结构
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934358
Kuan-Ting Wu, E. Vuillermet, Elise Usureau, Y. El-Helou, M. Kazan, W. Woon, M. Lazar, A. Bruyant
{"title":"SiC structural characterization by non destructive near-field microscopy techniques","authors":"Kuan-Ting Wu, E. Vuillermet, Elise Usureau, Y. El-Helou, M. Kazan, W. Woon, M. Lazar, A. Bruyant","doi":"10.1109/CAS56377.2022.9934358","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934358","url":null,"abstract":"SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. Recrystallization has been tried by high temperature annealing with two plateaus at 1400°C and 1700°C. The crystallinity was systematically investigated by non destructive near-field microscopy techniques, particularly adapted to the thin thickness of our layers. Good recrystallization is confirmed only on the e-beam evaporated layers and after the higher annealing plateau by preserving 4H substrate polytype.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122589408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly reflective surface coating using BaSO4 高反射表面涂层采用BaSO4
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934316
Stefan Caramizoiu, I. Mihalache
{"title":"Highly reflective surface coating using BaSO4","authors":"Stefan Caramizoiu, I. Mihalache","doi":"10.1109/CAS56377.2022.9934316","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934316","url":null,"abstract":"In this paper is presented a cost-effective high reflective white coating, using common off-the-shelf components. The mixture with the best result will be used to coat the inside of a 3D printed integration sphere for usage in multispectral analysis.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123155387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Advances in cochlear implants 人工耳蜗的进展
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934629
P.J. French, N. Lawand, A. Miralles
{"title":"Advances in cochlear implants","authors":"P.J. French, N. Lawand, A. Miralles","doi":"10.1109/CAS56377.2022.9934629","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934629","url":null,"abstract":"Cochlear implants restore hearing to many people around the world. These devices are hand-made and have limitations in terms of sound quality. The maximum number of electrodes at present is 22 and this means that the sound spectrum is divided into 22 blocks. Furthermore, the breadth of the implant limits penetration and thus lower frequencies are lost. Silicon based technology enables an increase in the number of electrodes and also a reduction in the cross-section of the probe. This will improve sound quality and reduce risks of damage during insertion. This paper shows the development of new technologies to improve the quality of cochlear implants. These involve a move to polymers which make use of silicon-based technology in their manufacture.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127940082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Resonance frequency vs. magnetic field analysis for ScA1N/Si SAW resonators with magnetostrictive metalization on the nanolithographic IDTs 纳米光刻idt上磁致伸缩金属化ScA1N/Si SAW谐振器的共振频率与磁场分析
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934338
G. Boldeiu, C. Nastase, A. Nicoloiu, A. Florescu, I. Zdru, D. Vasilache, A. Dinescu, A. Müller
{"title":"Resonance frequency vs. magnetic field analysis for ScA1N/Si SAW resonators with magnetostrictive metalization on the nanolithographic IDTs","authors":"G. Boldeiu, C. Nastase, A. Nicoloiu, A. Florescu, I. Zdru, D. Vasilache, A. Dinescu, A. Müller","doi":"10.1109/CAS56377.2022.9934338","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934338","url":null,"abstract":"The paper analyses the variation of the resonance frequency vs magnetic field on novel SAW resonators fabricated on ScAINISi by e-beam nanolithography, using a magnetostrictive metallization (Ni). for the interdigitated transducers (IDTs). Measurements have been performed at room and cryogenic temperatures down to 100 K. and row data as well as time gated data are presented. The resonance frequencies were above 5 GHz, increasing with temperature. The influence of the external magnetic field (varied between -300 and +300 mT) was investigated in terms of resonance frequency shift. The devices were analyzed also targeting applications as magnetic field sensors.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121169061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vanadium oxide by radio frequency magnetron sputtering and spray pyrolysis technique: structural and optical properties 用射频磁控溅射和喷雾热解技术研究氧化钒的结构和光学性质
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934465
C. Romanițan, I. Mihalache, S. Vulpe, M. Stoian, I. V. Tudose, K. Mouratis, O. Tutunaru, N. Djourelov, M. Suchca
{"title":"Vanadium oxide by radio frequency magnetron sputtering and spray pyrolysis technique: structural and optical properties","authors":"C. Romanițan, I. Mihalache, S. Vulpe, M. Stoian, I. V. Tudose, K. Mouratis, O. Tutunaru, N. Djourelov, M. Suchca","doi":"10.1109/CAS56377.2022.9934465","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934465","url":null,"abstract":"Herein, structural and optical properties in vanadium oxide layers were evaluated by means of different spectroscopic tools, such as X-ray diffraction (XRD), X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS), diffuse reflectance spectroscopy (DRS) absorbance or photoluminescence (PL). The relationship between crystal structure and optical properties was carefully evaluated in vanadium oxide layers obtained by SPT and RF-MS at different synthesis parameters. A different bandgap for the samples obtained by RF-MS was attributed to the V4+ oxidation states.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127596628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 1.2V Core Switched Geometry Schmitt Trigger Relaxation Oscillator 一个1.2V核心开关几何施密特触发松弛振荡器
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934205
A. Antonescu
{"title":"A 1.2V Core Switched Geometry Schmitt Trigger Relaxation Oscillator","authors":"A. Antonescu","doi":"10.1109/CAS56377.2022.9934205","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934205","url":null,"abstract":"Relaxation oscillators can provide a large frequency range whilst maintaining low power consumption and reduced area. The main drawback of most of the Schmitt trigger-based oscillators is the supply voltage switching point variation, which has a profound influence on the output frequency spread. The present work analyses a low voltage core, switched geometry Schmitt trigger relaxation oscillator, with local, low voltage supply, provided by a low dropout internal regulator. The power consumption of the schematic is optimized by using the low voltage core, while the local regulator accommodated the schematic functionality for the supply voltage range between 1.6 and 5.5V.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126688894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Adaptive driving for optimum LDO transient performance 最佳LDO瞬态性能的自适应驱动
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934463
Ionuț-Alin Ilie, C. Zegheru, G. Brezeanu
{"title":"Adaptive driving for optimum LDO transient performance","authors":"Ionuț-Alin Ilie, C. Zegheru, G. Brezeanu","doi":"10.1109/CAS56377.2022.9934463","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934463","url":null,"abstract":"This paper presents a driver used in low-dropout linear voltage regulators (LDOs) in order to optimize the transient performance in terms of undershoot and overshoot. The driver structure includes two different type buffers: first one is a pMOS source follower and the second one is a nMOS source follower. They are cascade connected and in function of regulator's output current, the second one is bypassed. At low output currents, the driver works as a simple pMOS buffer assuring an optimum undershoot performance in case a positive load jump occurs. At high output currents, the driver works as a two stage buffer (PMOS buffer followed by nMOS buffer) and assures an optimum overshoot performance in case a negative load step occurs.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115682558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi-physics simulations of pyroelectric harvesters based on nanoscale ferroelectrics 基于纳米铁电体的热释电收割机的多物理场模拟
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934509
G. Boldeiu, M. Dragoman, M. Aldrigo, S. Iordanescu, A. Cismaru
{"title":"Multi-physics simulations of pyroelectric harvesters based on nanoscale ferroelectrics","authors":"G. Boldeiu, M. Dragoman, M. Aldrigo, S. Iordanescu, A. Cismaru","doi":"10.1109/CAS56377.2022.9934509","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934509","url":null,"abstract":"In this paper, we present the COMSOL Multiphysics simulations of a hafnium oxide-based system that can collect energy and transform it into a $boldsymbol{DC}$ voltage, namely a pyroelectric harvester. Energy harvesting has been attracting a tremendous interest in the last years. $boldsymbol{In}$ this sense, accurate models of energy harvesters need to be rigorously simulated to assess the conversion of the energy source (in this case, heat) into a low-power electrical signal. In this work, we predict the performance of the proposed system through the choice of the best materials and the optimization of the overall geometry.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131143314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficient Modeling of PVT Variation for Mixed-Signal Circuit Sizing 混合信号电路尺寸中PVT变化的有效建模
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934178
Octavian Pascu, C. Vișan, Marius Stanescu, H. Cucu, C. Diaconu, Andi Buzo, G. Pelz
{"title":"Efficient Modeling of PVT Variation for Mixed-Signal Circuit Sizing","authors":"Octavian Pascu, C. Vișan, Marius Stanescu, H. Cucu, C. Diaconu, Andi Buzo, G. Pelz","doi":"10.1109/CAS56377.2022.9934178","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934178","url":null,"abstract":"With the ever-increasing complexity of IC features and properties, manual sizing for mixed -signal circuits lately became very challenging. Recent years brought machine learning and optimization techniques to the field of circuit design, with evolutionary algorithms and Bayesian models showing good results for automated circuit sizing. However, these methods can still require an unfeasible large number of simulations, especially if taking into account several PVT variation corners. In this context, we introduce a methodology that uses surrogate models to perform PVT variation-aware design optimization, that can enhance state-of-the-art evolutionary algorithms. We evaluate the introduced method on one voltage regulator and we highlight that the proposed PVT corner enhancement leads to obtaining feasible solutions up to 2 times faster than using previous state-of-the-art PVT corner representation.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"354 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132450743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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