G. Boldeiu, C. Nastase, A. Nicoloiu, A. Florescu, I. Zdru, D. Vasilache, A. Dinescu, A. Müller
{"title":"Resonance frequency vs. magnetic field analysis for ScA1N/Si SAW resonators with magnetostrictive metalization on the nanolithographic IDTs","authors":"G. Boldeiu, C. Nastase, A. Nicoloiu, A. Florescu, I. Zdru, D. Vasilache, A. Dinescu, A. Müller","doi":"10.1109/CAS56377.2022.9934338","DOIUrl":null,"url":null,"abstract":"The paper analyses the variation of the resonance frequency vs magnetic field on novel SAW resonators fabricated on ScAINISi by e-beam nanolithography, using a magnetostrictive metallization (Ni). for the interdigitated transducers (IDTs). Measurements have been performed at room and cryogenic temperatures down to 100 K. and row data as well as time gated data are presented. The resonance frequencies were above 5 GHz, increasing with temperature. The influence of the external magnetic field (varied between -300 and +300 mT) was investigated in terms of resonance frequency shift. The devices were analyzed also targeting applications as magnetic field sensors.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAS56377.2022.9934338","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The paper analyses the variation of the resonance frequency vs magnetic field on novel SAW resonators fabricated on ScAINISi by e-beam nanolithography, using a magnetostrictive metallization (Ni). for the interdigitated transducers (IDTs). Measurements have been performed at room and cryogenic temperatures down to 100 K. and row data as well as time gated data are presented. The resonance frequencies were above 5 GHz, increasing with temperature. The influence of the external magnetic field (varied between -300 and +300 mT) was investigated in terms of resonance frequency shift. The devices were analyzed also targeting applications as magnetic field sensors.