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2022 International Semiconductor Conference (CAS)最新文献

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Quantitative identification of significant k-points enabling accurate & computationally efficient UTB MOS device simulation 定量识别重要的k点，实现精确和计算效率高的UTB MOS器件模拟
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934279
Nalin Vilochan Mishra, A. Medury
{"title":"Quantitative identification of significant k-points enabling accurate & computationally efficient UTB MOS device simulation","authors":"Nalin Vilochan Mishra, A. Medury","doi":"10.1109/CAS56377.2022.9934279","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934279","url":null,"abstract":"Ahstract-A semi-empirical $mathbf{sp}^{3}mathbf{d}^{5}mathbf{s}^{*}$ tight-binding model is used to simulate the full-band structure, which in turn is used to calculate the electrostatics of Ultra- Thin-Body (UTB) MOS devices through a self-consistent solution with the 1-D Poisson's equation. Through the identification of significant k-points from the full band structure and calculation of electrostatics of UTB MOS devices over those k-points a computationally efficient yet accurate approach valid over a wide range of channel thicknesses, gate voltages and device temperatures has been shown. In this work, we focus on the practical implementation of this approach, where we show that the choice of a semi-empirical parameter η, which is a weighting factor (multiplier) to the maximum Fermi-Dirac probability (corresponding to the conduction band minima), is critical in identifying the significant k-points. Through an algorithm to quantify η, which is then used to accurately and effectively calculate device electrostatics, we obtain the optimal value of η, showing that this value, for a particular device temperature, is channel thickness independent while varying with gate voltage.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133545893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT 11 kV 4H-SiC BJT结端延伸及环系统优化
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934390
Ali Ammar, M. Lazar, B. Vergne, S. Scharnholz, L. Phung, C. Sonneville, C. Raynaud, H. Morel, D. Planson, Marcin Zielinski
{"title":"Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT","authors":"Ali Ammar, M. Lazar, B. Vergne, S. Scharnholz, L. Phung, C. Sonneville, C. Raynaud, H. Morel, D. Planson, Marcin Zielinski","doi":"10.1109/CAS56377.2022.9934390","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934390","url":null,"abstract":"In this article, a high power 4H-SiC NPN BJT is demonstrated with a blocking voltage greater than 10 kV when its theoretical value is around 13 kV. The device design was extracted from a previous reported model and a fabrication process with eleven mask levels was performed. The maximum recorded common-emitter current gain is 20 at a current density 178 A/cm2.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115713436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural and magnetic characterization of epitaxial $mathrm{V}_{2}mathrm{O}_{3}/text{Ni}_{80}text{Fe}_{20}$ hybrid magnetic structures 外延$mathrm{V}_{2}mathrm{O}_{3}/text{Ni}_{80}text{Fe}_{20}$杂化磁性结构的结构与磁性表征
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934196
K. Ignatova, M. T. Sultan, A. Elvarsson, S. Ingvarsson, U. Arnalds
{"title":"Structural and magnetic characterization of epitaxial $mathrm{V}_{2}mathrm{O}_{3}/text{Ni}_{80}text{Fe}_{20}$ hybrid magnetic structures","authors":"K. Ignatova, M. T. Sultan, A. Elvarsson, S. Ingvarsson, U. Arnalds","doi":"10.1109/CAS56377.2022.9934196","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934196","url":null,"abstract":"We study the structure and temperature depen-dent electrical and magnetic properties of highly epitaxial $mathrm{V}_{2}mathrm{O}_{3}/text{Ni}_{80}text{Fe}_{20}$ layers grown on c-plane $mathrm{A}1_{2}mathrm{O}_{3}$ by direct current magnetron sputtering. We focus our attention on the structural and magnetic properties of the Ni80Fe20layer and their dependence on the deposition temperature. X-ray diffraction measurements reveal an epitaxial nature of the $mathrm{V}_{2}mathrm{O}_{3}$ layers with a (006) orientation. Electrical characterization of single layered $mathrm{V}_{2}mathrm{O}_{3}$ reveals a metal insulator transition at around $sim 150$ K. All samples showed a strong epitaxial (1 1 1) peak showing that highly crystallized $text{Ni}_{80}text{Pe}_{20}$ layers can be deposited onto $mathrm{V}_{2}mathrm{O}_{3}$ at room temperature. Angular dependent magneto-optical Kerr effect characterization of the films reveals a uniaxial anisotropy in the films with a coercivity of the order of 1 Gauss. The first-order reversal curve method is used to analyze the magnetization reversal mechanism.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"159 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124233536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural and magnetic changes in CoAlZr thin films upon post annealing 退火后CoAlZr薄膜的结构和磁性变化
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934156
A. Tryggvason, T. H. Frímannsdóttir, M. T. Sultan, K. Thorarinsdottir, F. Magnus, S. Ingvarsson
{"title":"Structural and magnetic changes in CoAlZr thin films upon post annealing","authors":"A. Tryggvason, T. H. Frímannsdóttir, M. T. Sultan, K. Thorarinsdottir, F. Magnus, S. Ingvarsson","doi":"10.1109/CAS56377.2022.9934156","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934156","url":null,"abstract":"We present a study of the effect of annealing amorphous ferromagnetic thin films of $text{Co}_{0.85}(mathrm{A}1_{0.7}text{Zr}_{0.3})_{0.15}$, post deposition. The annealing was done in vacuum with no applied magnetic field. We find that already at a relatively low annealing temperature of 130 $^{circ} mathrm{C}$ there is crystallite formation that introduces both structural and magnetic inhomogeneity. This does not affect the saturation magnetization strongly, but strongly affects the switching behavior and the overall effective anisotropy of the films. Further, there is a dramatic increase in magnetization damping. Thus, the annealing has a profound effect on both static and dynamic magnetic properties of the material. This is important to keep in mind for potential applications using these materials.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122829328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heat Transfer Characteristics of CNT with Chirality Engineering for Solar Cell Application 手性碳纳米管在太阳能电池中的传热特性研究
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934451
Aamar Shabir, M. Ullah
{"title":"Heat Transfer Characteristics of CNT with Chirality Engineering for Solar Cell Application","authors":"Aamar Shabir, M. Ullah","doi":"10.1109/CAS56377.2022.9934451","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934451","url":null,"abstract":"Researchers in solar cell technology are attracted by the use of Carbon Nanotubes (CNTs). Heat transport in a solar cell is not accurately anticipated by the modeling of CNTs. Mathematical models for predicting the heat transport in the solar cell substrate of carbon nanotubes have been created in this study. CNTs become conductors as a result of particle collisions (photons and electrons). Inter-phase conduction of CNTs at the nanoscale level is ignored and a correction factor of 1/25 is incorporated in the model to account for this. Maximum heat transmission was observed for specified CNT diameters with various chiral angles. CNT heat conduction in solar cell technology has a clear path to the model described. Because of their isotropic structure, carbon nanotubes have been shown in simulations to have exceptional heat conduction capabilities.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132093077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
The non-enzymatic detection of the pollutant bisphenol A using S-graphene as nanozyme material 以s -石墨烯为纳米酶材料的污染物双酚A的非酶检测
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934301
Livia Alexandra Dinu, A. Baracu, O. Brîncoveanu
{"title":"The non-enzymatic detection of the pollutant bisphenol A using S-graphene as nanozyme material","authors":"Livia Alexandra Dinu, A. Baracu, O. Brîncoveanu","doi":"10.1109/CAS56377.2022.9934301","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934301","url":null,"abstract":"The sulfur-doped graphene (S-GR) acting as nanozyme material was used for the development of an electrochemical sensor for the sensitive detection of the pollutant, bisphenol A. The sensor was obtained by modifying the gold working electrode (WE) of a microfabricated device with the proposed S-GR nanomaterial. A wide linear concentration range and a low limit of detection LOD (1 nM) proved that the proposed method could be reliable to be used for on-site environmental application using portable instruments.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123594828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Surface engineering for SiC etching with Ni electroplating masks 镍电镀掩模SiC蚀刻的表面工程
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934701
Nour Beydoun, M. Lazar, Xavier Gassmann
{"title":"Surface engineering for SiC etching with Ni electroplating masks","authors":"Nour Beydoun, M. Lazar, Xavier Gassmann","doi":"10.1109/CAS56377.2022.9934701","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934701","url":null,"abstract":"This study reports research on Nickel etch mask used for deep plasma etching of silicon carbide (SiC) substrates, aiming to fabricate power integrated devices. Ni masks with significant thicknesses are requested when performing deep etches of SiC, which are less compatible with classic thin film physical vapor deposition (PVD) methods. Uniform and smooth plasma etched surfaces of SiC were obtained without micromasking phenomena upon using Ni masks deposed by electroplating. Detailed here is this Ni masks based technology we developed beyond its limitation, in order to obtain a high-etched thickness of silicon carbide substrates.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123632438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
PDMS Based Microfluidics Fabrication Using 3D-Printed Molds 基于PDMS的微流体制造使用3d打印模具
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934518
V. Dediu, M. Carp, F. S. Iliescu, E. A. Laszlo, C. Pachiu, C. Iliescu
{"title":"PDMS Based Microfluidics Fabrication Using 3D-Printed Molds","authors":"V. Dediu, M. Carp, F. S. Iliescu, E. A. Laszlo, C. Pachiu, C. Iliescu","doi":"10.1109/CAS56377.2022.9934518","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934518","url":null,"abstract":"Microfluidic devices have a central role in many biomedical applications, and there are many fabrication methods to obtain microchannels and reservoirs. Polydimethylsiloxane (PDMS) based microfluidics register an intense development due to the well-known advantages of this material. New manufacturing methods are needed as an alternative to commonly used soft lithography in order to produce inexpensive microfluidic devices. In this paper, we present a simple and reliable technique to obtain PDMS based microfluidic devices. We used digital light processing (DLP) 3D printing for rapid fabrication of resin mold for PDMS structures. UV and thermal post-treatment of printed mold led to high quality molds. Thin aluminum film deposition on resin mold provided a buffer layer to prevent PDMS curing inhibition. Glass was used as substrate material and part of the microchannels wall. Resulted microfluidic parts have a reduced roughness and can ensure robust integrity for the microchannels and chambers.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126743842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
To Float Or Not To Float - Negative Supply Diagnostics For Gate Drivers 浮动或不浮动-栅极驱动器的负电源诊断
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934311
I. Hurez, Ki-Nam Song, Andrei Enache, V. Anghel, G. Brezeanu
{"title":"To Float Or Not To Float - Negative Supply Diagnostics For Gate Drivers","authors":"I. Hurez, Ki-Nam Song, Andrei Enache, V. Anghel, G. Brezeanu","doi":"10.1109/CAS56377.2022.9934311","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934311","url":null,"abstract":"This paper presents an architecture for detecting the floating status of the negative power supply pin of gate drivers. The architecture monitors the negative supply voltage and compares it to an internal reference based on a diode voltage drop. This technique compensates the temperature variation of the negative power supply floating voltage. The proposed architecture was implemented as part of a galvanically isolated gate driver in a standard 0.25μ m BCD technology. Simulation and experimental results validate the proper functionality.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125977324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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