Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT

Abstract

In this article, a high power 4H-SiC NPN BJT is demonstrated with a blocking voltage greater than 10 kV when its theoretical value is around 13 kV. The device design was extracted from a previous reported model and a fabrication process with eleven mask levels was performed. The maximum recorded common-emitter current gain is 20 at a current density 178 A/cm2.