11 kV 4H-SiC BJT结端延伸及环系统优化

2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI:10.1109/CAS56377.2022.9934390

Ali Ammar, M. Lazar, B. Vergne, S. Scharnholz, L. Phung, C. Sonneville, C. Raynaud, H. Morel, D. Planson, Marcin Zielinski

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引用次数: 0

摘要

本文演示了一种大功率4H-SiC NPN BJT，其理论值约为13 kV，阻滞电压却大于10 kV。该装置设计是从先前报道的模型中提取的，并执行了具有11个掩模级别的制造过程。记录的最大共发射极电流增益为20，电流密度为178 a /cm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT

In this article, a high power 4H-SiC NPN BJT is demonstrated with a blocking voltage greater than 10 kV when its theoretical value is around 13 kV. The device design was extracted from a previous reported model and a fabrication process with eleven mask levels was performed. The maximum recorded common-emitter current gain is 20 at a current density 178 A/cm2.

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2022 International Semiconductor Conference (CAS)

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