外延$\mathrm{V}_{2}\mathrm{O}_{3}/\text{Ni}_{80}\text{Fe}_{20}$杂化磁性结构的结构与磁性表征

2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI:10.1109/CAS56377.2022.9934196

K. Ignatova, M. T. Sultan, A. Elvarsson, S. Ingvarsson, U. Arnalds

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引用次数: 0

摘要

采用直流磁控溅射技术，研究了在c平面$\ mathm {A}1_{2}\ mathm {O} {3}/\text{Ni}_{80}\text{Fe}_{20}$上生长的高外延$\ mathm {V}_{2}\ mathm {O}}{3}$层的结构和与温度的关系。我们重点研究了ni80fe20层的结构和磁性能及其与沉积温度的关系。x射线衍射测量揭示了具有(006)取向的$\mathrm{V}_{2}\mathrm{O}_{3}$层的外延性质。单层$\mathrm{V}_{2}\mathrm{O}_{3}$的电学表征显示在$\sim 150$ k附近存在金属绝缘体跃迁。所有样品均显示出一个强外晶(1 11 1)峰，表明在室温下可在$\mathrm{V}_{2}\mathrm{O}_{3}$上沉积高度结晶的$\mathrm{Ni}_{80}\text{Pe}_{20}$层。薄膜的角相关磁光克尔效应表征表明，薄膜具有单轴各向异性，矫顽力为1高斯数量级。采用一阶反转曲线法分析了磁化反转机理。

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Structural and magnetic characterization of epitaxial $\mathrm{V}_{2}\mathrm{O}_{3}/\text{Ni}_{80}\text{Fe}_{20}$ hybrid magnetic structures

We study the structure and temperature depen-dent electrical and magnetic properties of highly epitaxial $\mathrm{V}_{2}\mathrm{O}_{3}/\text{Ni}_{80}\text{Fe}_{20}$ layers grown on c-plane $\mathrm{A}1_{2}\mathrm{O}_{3}$ by direct current magnetron sputtering. We focus our attention on the structural and magnetic properties of the Ni80Fe20layer and their dependence on the deposition temperature. X-ray diffraction measurements reveal an epitaxial nature of the $\mathrm{V}_{2}\mathrm{O}_{3}$ layers with a (006) orientation. Electrical characterization of single layered $\mathrm{V}_{2}\mathrm{O}_{3}$ reveals a metal insulator transition at around $\sim 150$ K. All samples showed a strong epitaxial (1 1 1) peak showing that highly crystallized $\text{Ni}_{80}\text{Pe}_{20}$ layers can be deposited onto $\mathrm{V}_{2}\mathrm{O}_{3}$ at room temperature. Angular dependent magneto-optical Kerr effect characterization of the films reveals a uniaxial anisotropy in the films with a coercivity of the order of 1 Gauss. The first-order reversal curve method is used to analyze the magnetization reversal mechanism.

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2022 International Semiconductor Conference (CAS)

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