薄氧化物CDM保护的验证技术

2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI:10.1109/CAS56377.2022.9934740

Mihaela-Daniela Dobre, P. Coll, G. Brezeanu

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引用次数: 0

摘要

本文描述了一种验证技术，该技术允许在驱动器-接收器对之间的长金属互连情况下对电荷器件模型静电放电(CDM-ESD)进行评估。给出了问题描述和验证方法。一种完整定义的方法将有助于预防CDM-ESD事件，重点是未来检测28nm技术薄氧化物器件故障的步骤。

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Validation Technique for Thin Oxide CDM Protections

This paper describes a validation technique that permits the evaluation of the Charge Device Model Electrostatic Discharge (CDM-ESD) in case of long metal interconnection between driver-receiver pair. The problem statement and verification approach are illustrated. A fully defined method that will help the prevention of the CDM-ESD event, with emphasis on future steps to detect the failures for 28nm technology thin-oxide devices is reported.

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2022 International Semiconductor Conference (CAS)

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