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Confinement Effect and Conduction Band Offset in DG-SOI MOSFETs: A Simulation Study DG-SOI mosfet中的约束效应和导带偏移:仿真研究
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934318
Harshit Kansal, Nalin Vilochan Mishra, A. Medury
{"title":"Confinement Effect and Conduction Band Offset in DG-SOI MOSFETs: A Simulation Study","authors":"Harshit Kansal, Nalin Vilochan Mishra, A. Medury","doi":"10.1109/CAS56377.2022.9934318","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934318","url":null,"abstract":"Besides Quantum Confinement Effects (QCEs) seen in Ultra-Thin (UT) channel Double-Gate Silicon on Insulator (DG-SOI) MOS devices, the Band-offset variations between the oxide and the UT channel also impact device electrostatics, which is not adequately considered by the existing TCAD Models. Effective Mass Approximation (EMA) is one of the widely used approach which takes both QCEs and Conduction Band offset (CBO) variations into account. In this work, we ensure the accuracy of the EMA approach through benchmarking the results with the Tight-Binding Method (TBM), for an infinite potential well (equivalent to considering high CBO) case. Having corrected effective mass while also inserting suitable energy correction parameters, the accuracy of the EMA approach is now ensured. In this work, we show that by reducing the band-gap of the oxide material, the integrated charge density obtained using the Direct Tunneling (DT) model in TCAD can now accurately emulate the results obtained from the benchmarked Effective Mass Approximation (EMA) approach.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121743131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Metal - Reduced Graphene Oxide Heterostructures on Glass substrate: Preparation and Characterization 玻璃基板上金属还原氧化石墨烯异质结构:制备与表征
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934206
F. Comanescu, C. Obreja, M. Purica
{"title":"Metal - Reduced Graphene Oxide Heterostructures on Glass substrate: Preparation and Characterization","authors":"F. Comanescu, C. Obreja, M. Purica","doi":"10.1109/CAS56377.2022.9934206","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934206","url":null,"abstract":"In this paper we present the preparation and characterization of metal - reduced graphene oxide (RGO) heterostructures on glass substrates in order to determine the metal (Ni, Cr/ Au, Al) that is most suitable for photosensor application. A metal mask by shading was designed and fabricated to allow successive and selected area metal strips deposition on RGO layer on glass substrates. The quality of prepared RGO was investigated by means of Raman spectroscopy tacking into account both intensity ratio, ID/I G and the difference between the positions of D’ and G bands. The I-V characteristics recorded in dark, white light and UV irradiation conditions confirmed that metal (especially Al)-RGO heterostructures have photodetection properties which gives the possibility to obtain photodetectors having various metal electrodes configurations.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127259100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Surface acoustic wave sensors for NO2 detection based on sulfur-doped graphene 基于硫掺杂石墨烯的二氧化氮表面声波传感器
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934549
A. Baracu, V. Buiculescu, Livia Alexandra Dinu, C. Brasoveanu, R. Müller
{"title":"Surface acoustic wave sensors for NO2 detection based on sulfur-doped graphene","authors":"A. Baracu, V. Buiculescu, Livia Alexandra Dinu, C. Brasoveanu, R. Müller","doi":"10.1109/CAS56377.2022.9934549","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934549","url":null,"abstract":"Surface acoustic wave (SAW) sensors for NO2 gas detection have received increased attention mainly due to their high sensitivity and wireless operation. In this paper, sulfur-doped graphene (S-Gr) was integrated into a delay line configuration shear horizontal (SH) lithium tantalate (LiTaO3) SAW device for enhancing the performance of NO2 detection at room temperature. The center frequency of the sensor was 121.5 MHz and the insertion loss close to 10 dB. After device functionalization, the insertion loss of the sensor increased to 11.8 dB, with a phase shift close to +24° at the same frequency, due to the mass loading effect. Upon exposure to NO2, the sensor response over 1 ppm to 75 ppm gas concentration range increased from 0° to 1.13°. The sensitivity of the S-Gr-based SH-SAW sensor was 0.4°/ppm in the linear response range. An NH3 selectivity study was also performed to determine the S-Gr response to this interfering gaseous analyte. A sensitivity of 0.01°/ppm for NH3 was observed, a value about 40 times lower than the sensitivity for NO2.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130826503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
How can ferroelectricity improve the performance of thin-layer memristors? 铁电如何改善薄层记忆电阻器的性能?
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934691
K. Szaciłowski
{"title":"How can ferroelectricity improve the performance of thin-layer memristors?","authors":"K. Szaciłowski","doi":"10.1109/CAS56377.2022.9934691","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934691","url":null,"abstract":"Memristors are unique electronic elements that are passive (they can dissipate energy and are not power sources) and have a state memory. In functional terms, they are similar to synapses present in animal nervous systems. These features mean that memristors are considered as the main building blocks of future computers. Their existence was theoretically predicted in the 1970s, which initiated very intensive research work. Materials that exhibit such characteristics include lead halide perovskites, and photovoltaic materials have been successfully tested also in memristive applications. The main limitation of their widespread use is their high sensitivity to moisture and toxicity. It is anticipated that the combination of semiconductor and ferroelectric features in one material can bring many benefits from the point of view of the operation of the memristors: faster switching, longer state retention time, and multistate switching.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114062496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of 3-port SAW diplexers using 2-port VNA measurements 使用2端口VNA测量表征3端口SAW双工器
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934482
A. Bunea, D. Neculoiu, M.A. Dinescu
{"title":"Characterization of 3-port SAW diplexers using 2-port VNA measurements","authors":"A. Bunea, D. Neculoiu, M.A. Dinescu","doi":"10.1109/CAS56377.2022.9934482","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934482","url":null,"abstract":"A simple approach to the on-wafer characterization of 3-port surface acoustic wave (SAW) diplexers using S- to Z- parameter conversion is proposed. The concept is first tested on a simple power divider model. The model is based on ideal transmission line elements and open circuit blocks. The results are excellent with total S-parameter errors below 10−9• The technique is then successfully applied to X-band delay line type 3-port SAW circuits connected using 50 Ohm characteristic impedance coplanar waveguide (CPW) transmission lines.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122892375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A facile dip-coating process graphene-TiO2 on titanium foil for hybrid electrode fabrication 制备杂化电极用石墨烯- tio2薄膜浸涂工艺研究
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934754
C. Lazău, Cornelia Bandas, M. Nicolaescu, Corina Orha, A. Pop
{"title":"A facile dip-coating process graphene-TiO2 on titanium foil for hybrid electrode fabrication","authors":"C. Lazău, Cornelia Bandas, M. Nicolaescu, Corina Orha, A. Pop","doi":"10.1109/CAS56377.2022.9934754","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934754","url":null,"abstract":"Titanium dioxide modified with graphene oxide $(text{GO-TiO}_{2})$ nanocomposite films were successfully prepared on titanium foil by a facile and low-cost dip-coating technique for fabrication of hybrid electrode. $text{TiO}_{2}$ nanolayer was grown on titanium foil by thermal oxidation $(text{Ti-TiO}_{2})$ at $500^{circ}mathrm{C}$ in 0.5 M hydrofluoric acid. GO film was deposited on $text{Ti-TiO}_{2}$ layers by dip-coating method, respectively, and thermally treated for fabrication of hybrid electrode based on $text{Ti-TiO}_{2}text{-rGO}$. Investigations such as X-ray diffraction, UV-VIS analysis and SEM morphology were used for analysis of the structural and morphological characteristics of the as-synthesized films. The electrochemical characterization will be performed by cyclic voltammetry, in 1M KOH supporting electrolyte, scan range $-0.3mathrm{V}/text{SCE}$ and 1.4 V/SCE.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125985184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Intelligent Temperature Sensor with SiC Schottky Diode 智能温度传感器与SiC肖特基二极管
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934369
V. Moise, F. Draghici, G. Pristavu, R. Pascu, Dan Oneaţă, G. Brezeanu
{"title":"Intelligent Temperature Sensor with SiC Schottky Diode","authors":"V. Moise, F. Draghici, G. Pristavu, R. Pascu, Dan Oneaţă, G. Brezeanu","doi":"10.1109/CAS56377.2022.9934369","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934369","url":null,"abstract":"This paper presents the development of an intelligent high temperature sensor to be used in hostile environment critical industrial applications. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal, which allows operation at temperatures up to 250°C. It represents a reliable alternative to low-lifespan conventional solutions, such as thermocouples. High accuracy is demonstrated by simulations and measurements in the 25-250°C domain with errors lower than 1%, related to the temperature range of interest. The sensor's output voltage has improved sensitivity and good linearity, while the readout circuit can be calibrated for linear response over a tunable temperature detection range.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134139071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A second order discrete-time ΔA analog to digital converter for audio applications 用于音频应用的二阶离散时间ΔA模拟到数字转换器
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934665
Madalina Boncu, S. Pana, Florin Draahlci, G. Brezeanu
{"title":"A second order discrete-time ΔA analog to digital converter for audio applications","authors":"Madalina Boncu, S. Pana, Florin Draahlci, G. Brezeanu","doi":"10.1109/CAS56377.2022.9934665","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934665","url":null,"abstract":"This paper aims to present the design of a second order discrete-time sigma delta analog to digital converter (ADC). This converter is intended for integration within an audio application, the input bandwidth being 25kHz. The article also provides details regarding the stability of second and third order modulators. The converter implemented in 180nm achieves a SNR of 87.25dB, for a 5V supply voltage, with a sampling rate of 12.8MHz and oversampling ratio (OSR) of 256, and consumes 3.81mW.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114575994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Home Electronic Laboratory for Each Student - A Potential Paradigm Shift in Teaching Electronics 每个学生的家庭电子实验室——电子学教学的潜在范式转变
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934592
R. Onet, M. Neag, A. Fazakas, Paul Miresan, Gabriel Petrasuc, Iulian Sularea, Alessandro Battigelli, Martin Hill
{"title":"A Home Electronic Laboratory for Each Student - A Potential Paradigm Shift in Teaching Electronics","authors":"R. Onet, M. Neag, A. Fazakas, Paul Miresan, Gabriel Petrasuc, Iulian Sularea, Alessandro Battigelli, Martin Hill","doi":"10.1109/CAS56377.2022.9934592","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934592","url":null,"abstract":"This paper presents a proposal to change traditional undergraduate teaching Bachelor-level electronic courses from a process of loosely connected, time-constrained on-campus theoretical and laboratory sessions to a blend of on-campus and home laboratory sessions. This way, students take more control over managing their learning process as the laboratory activity is no longer time-limited. To achieve this, we developed HELP kit: a low-cost, portable laboratory kit for electronic instrumentation and measurements that gives the same interface as a laboratory-based experience. The HELP kits were given for one semester to a group of eight undergraduate students and their feedback was very positive.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130488390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A mechanically amplified angular rate MEMS sensor using V -shaped springs 采用V形弹簧的机械放大角速率MEMS传感器
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934173
M. Gologanu, C. Tibeica, R. Voicu, D. Lăpădatu
{"title":"A mechanically amplified angular rate MEMS sensor using V -shaped springs","authors":"M. Gologanu, C. Tibeica, R. Voicu, D. Lăpădatu","doi":"10.1109/CAS56377.2022.9934173","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934173","url":null,"abstract":"We propose a quad mass Z-axis angular rate sensor, vibrating at 8.4kHz and with improved sensitivity. The drive blocks are capacitively actuated to a displacement of 6.5um with stresses in the suspension springs smaller than 250MPa. A displacement amplification system based on V-shaped springs transforms the drive movement to a large movement of 20um of the proof masses. A second pair of V-shaped springs is used to transform the Coriolis movement of the proof masses to a movement of the sense blocks with a five-fold amplification. An analytical model is proposed for the V-shaped springs. A finite element model is used to finely tune the drive and sense frequencies and to estimate the frequencies of higher resonances, all above 13kHz.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122610378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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