How can ferroelectricity improve the performance of thin-layer memristors?

Abstract

Memristors are unique electronic elements that are passive (they can dissipate energy and are not power sources) and have a state memory. In functional terms, they are similar to synapses present in animal nervous systems. These features mean that memristors are considered as the main building blocks of future computers. Their existence was theoretically predicted in the 1970s, which initiated very intensive research work. Materials that exhibit such characteristics include lead halide perovskites, and photovoltaic materials have been successfully tested also in memristive applications. The main limitation of their widespread use is their high sensitivity to moisture and toxicity. It is anticipated that the combination of semiconductor and ferroelectric features in one material can bring many benefits from the point of view of the operation of the memristors: faster switching, longer state retention time, and multistate switching.