Intelligent Temperature Sensor with SiC Schottky Diode

Abstract

This paper presents the development of an intelligent high temperature sensor to be used in hostile environment critical industrial applications. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal, which allows operation at temperatures up to 250°C. It represents a reliable alternative to low-lifespan conventional solutions, such as thermocouples. High accuracy is demonstrated by simulations and measurements in the 25-250°C domain with errors lower than 1%, related to the temperature range of interest. The sensor's output voltage has improved sensitivity and good linearity, while the readout circuit can be calibrated for linear response over a tunable temperature detection range.