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Chitosan-coated gold nanocomposites loading with cisplatin for potential use in cancer therapy 载顺铂壳聚糖包覆金纳米复合材料在癌症治疗中的潜在应用
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934545
P. Preda, B. Adiaconiţă, G. Crăciun, I. Mihalache, A. Boldeiu, O. Brîncoveanu, M. Maxim, E. Chiriac, M. Avram
{"title":"Chitosan-coated gold nanocomposites loading with cisplatin for potential use in cancer therapy","authors":"P. Preda, B. Adiaconiţă, G. Crăciun, I. Mihalache, A. Boldeiu, O. Brîncoveanu, M. Maxim, E. Chiriac, M. Avram","doi":"10.1109/CAS56377.2022.9934545","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934545","url":null,"abstract":"This paper discusses the synthesis of nanocomposites based on chitosan-coated gold nanoparticles (CS-AuNPs) and the loading with cisplatin drug (CisPt). Limited studies were performed on the evaluation of AuNPs functionalized with biopolymers and conjugated with CisPt. The loading of the CS-AuNPs with cisplatin was performed in order to obtain drugs delivery systems for cancer therapy. The obtained CS-AuNPs proved to be stable, with a slight agglomeration tendency (PI of 0.302) and a hydrodynamic diameter of 85 nm. The CisPt loading in the nanocomposites was confirmed by UV-vis spectroscopy.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128204693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evolution of Construction, Performance and Application of Microbial Fuel Cells Based on River and Acid Mine Drainage Sediments 基于河流和酸性矿山排水沉积物的微生物燃料电池结构、性能及应用的演变
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934706
D. V. Randjelovi, K. Joksimovi, I. Kodranov, A. Žerađanin, B. Popovi, P. Poljak, D. Manojlović, V. Beškoski
{"title":"Evolution of Construction, Performance and Application of Microbial Fuel Cells Based on River and Acid Mine Drainage Sediments","authors":"D. V. Randjelovi, K. Joksimovi, I. Kodranov, A. Žerađanin, B. Popovi, P. Poljak, D. Manojlović, V. Beškoski","doi":"10.1109/CAS56377.2022.9934706","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934706","url":null,"abstract":"This paper gives overview of research activities, performed by our team, in the field of Microbial Fuel Cells (MFCs). Evolution of construction, performance and application of MFCs is presented. The path towards optimization of the performance led through design and construction of the cell and was followed by investigation of impact of different sediments containing different microbial communities. The sediment samples were collected from two locations in Serbia, confluence of rivers Sava and Danube in Belgrade and the acid mine drainage lake “Robule” in the copper mine Bor. Results of verified application in wastewater treatment are discussed.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133972768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel Thermal Shutdown Circuit for Automotive Power Management Application: 用于汽车电源管理的新型热关机电路
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934598
Elena Grigorita, T. Salajan, R. Onet
{"title":"Novel Thermal Shutdown Circuit for Automotive Power Management Application:","authors":"Elena Grigorita, T. Salajan, R. Onet","doi":"10.1109/CAS56377.2022.9934598","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934598","url":null,"abstract":"This paper presents a thermal-shutdown circuit that has been designed in a $boldsymbol{2.6mu m BiCMOS}$ process for automotive applications. The robustness of the proposed thermal shutdown circuit stands in its simple structure, that is based on temperature dependent currents comparison. With the proposed implementation, an excellent temperature sensitivity is achieved, while having low quiescent current, of only $boldsymbol{2.5mu A}$ and reduced area of 0.048mm2• Moreover, the proposed solution shows a 50% smaller variation of temperature threshold with respect to the standard approach that compares PTAT and constant currents.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132766175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Enhanced Candidate Selection Algorithm for Analog Circuit Verification 模拟电路验证的增强候选选择算法
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934364
Cristian Manolache, Alexandru Caranica, H. Cucu, Andi Buzo, C. Diaconu, G. Pelz
{"title":"Enhanced Candidate Selection Algorithm for Analog Circuit Verification","authors":"Cristian Manolache, Alexandru Caranica, H. Cucu, Andi Buzo, C. Diaconu, G. Pelz","doi":"10.1109/CAS56377.2022.9934364","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934364","url":null,"abstract":"In latest years, the complexity and applicability of modern Integrated Circuits (ICs) grew exponentially, hence the high-pressure to deliver IC designs faster on the market. For safety, a design meeting its specification under any allowed operating condition and fabrication variation is a prerequisite. Therefore, pre-Silicon (pre-Si) analog IC verification is an extremely important task, as in certain regions of this large parameter space, the device exhibits degraded performance, or it fails completely. During verification, a designer must find these regions of the input parameter space where the circuit fails. Ideally this must be done during pre-Si phase, to avoid potential huge re-design delays during prototyping or production. In this context, this paper presents a Machine Learning (ML) approach, where we sample the input space to offer good initial coverage of the operating conditions (OCs) hyperspace, with a small number of simulations. We denote one input of a circuit as an Operating Condition. We then leverage a ML-surrogate model of the circuit instead of time-consuming simulations to propose, during a candidate selection phase, new circuit worst cases, where the circuit fails. After updating the candidate proposal algorithm to include a Gradient Descent (GD) step, we highlight the performance improvement of this new method on synthetic circuits, where we obtain relative absolute verification errors below 1%, while using less simulations than other classical approaches.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130174988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Gas sensing mechanism involved in NH3 detection with NiO material NiO材料检测NH3的气敏机理
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934703
C. Simion, O. Florea, I. Mercioniu, I. Dinu, A. Stanoiu
{"title":"Gas sensing mechanism involved in NH3 detection with NiO material","authors":"C. Simion, O. Florea, I. Mercioniu, I. Dinu, A. Stanoiu","doi":"10.1109/CAS56377.2022.9934703","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934703","url":null,"abstract":"NiO sensitive material was prepared by using a hydrothermal synthesis route using ethylenediaminetetraacetic as structural agent. The sensing properties towards NH3 detection were acquired under real operating conditions by means of variable relative humidity. The gas sensing interaction mechanism was brought to the fore by means of simultaneous electrical resistance and work function measurements.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129438394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of three bandgap topologies implemented in standard CMOS technology with parasitic PNP bipolars 采用标准CMOS技术实现的三种带隙拓扑与寄生PNP双极体的比较
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934203
Emilia Gheorghiţă, R. Onet, I. Câmpanu
{"title":"Comparison of three bandgap topologies implemented in standard CMOS technology with parasitic PNP bipolars","authors":"Emilia Gheorghiţă, R. Onet, I. Câmpanu","doi":"10.1109/CAS56377.2022.9934203","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934203","url":null,"abstract":"This paper presents a comparison between three bandgap topologies that are based exclusively on the parasitic vertical PNP bipolar transistors in the CMOS technologies. An OpAmp-less bandgap, the Kuijk topology and a recently proposed resistorless bandgap reference circuit (BGR) are designed and compared considering noise, quiescent current, area and power supply rejection. A sizing strategy for the resistorless BGR is also provided. The circuits were implemented in a 180nm CMOS process, targeting low noise and low power consumption.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129307596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microelectronics in the 21st Century: Technology, Economics, Policies 21世纪的微电子:技术、经济、政策
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9933993
Andreas Wild
{"title":"Microelectronics in the 21st Century: Technology, Economics, Policies","authors":"Andreas Wild","doi":"10.1109/CAS56377.2022.9933993","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9933993","url":null,"abstract":"The semiconductor industry started in the 1950s, growing continuously and progressing steadily thanks in ability to innovate, to the unique economic conditions under which it operates, and to the government interventions that shaped it. This paper provides a brief survey of this journey, suggesting that the current period is probably going to redefine the shape of the industry for many years to come.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121471457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Step and Repeat Imprint Lithography for Wafer Scale Mastering of Micro-and Nanostructures 步进和重复压印光刻技术用于晶圆级微纳米结构的掌握
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934328
C. Thanner, A. Bichler, F. Feichtlbauer, P. Schuster
{"title":"Step and Repeat Imprint Lithography for Wafer Scale Mastering of Micro-and Nanostructures","authors":"C. Thanner, A. Bichler, F. Feichtlbauer, P. Schuster","doi":"10.1109/CAS56377.2022.9934328","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934328","url":null,"abstract":"Step and Repeat UV Imprint Lithography provides a flexible and low-cost pattern replication technique for upscaling from single devices to wafer level scale. Multiple copies of lens and mirror type structures have been investigated with focus on pattern shape, size and surface quality. The flexibility of this method demonstrating a reliable replication process over a high number of copies was shown for imprinting different patterns with different lateral dimensions from mm range down to sub-100nm resolution. It has to be highlighted that use of a Meta-type lenses could be used for this process as well and thus providing a viable scaling method for this new class of optical components. Master templates are fabricated by diamond turning two-photon polymerization or e-beam lithography and etching on single die basis. Then step and repeat replication provides an attractive solution for scaling sophisticated designs. Finally, the use of such step and repeat wafer for high volume production was shown by means of SmartNIL® replication at wafer level scale demonstrating reliable pattern shapes and surface quality.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131317039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-linear I-V characteristics of Co/BTO/LSMO ferroelectric tunnel junction Co/BTO/LSMO铁电隧道结的非线性I-V特性
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934305
T. Sandu, C. Tibeica, O. Nedelcu, R. Plugaru, N. Plugaru
{"title":"Non-linear I-V characteristics of Co/BTO/LSMO ferroelectric tunnel junction","authors":"T. Sandu, C. Tibeica, O. Nedelcu, R. Plugaru, N. Plugaru","doi":"10.1109/CAS56377.2022.9934305","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934305","url":null,"abstract":"The I-V curves of Co/BaTiO3/La0.67Sr0.33MnO3 ferroelectric tunnel junction have been calculated with the non-equilibrium Green function method at finite voltages. Compared to experimental data of a 2 nm thick barrier, our calculations match quantitatively the measurements at room temperature. Further analysis of the electric current shows that transport is done mainly by tunneling (direct and/or Fowler-Nordheim), while the part done through thermally activated resonant states is not relevant for a ferroelectric barrier thickness of 2 nm, but becomes dominant at 4 nm thickness.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114637087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrochemical biosensing based on graphene for detection of the SARS-Co V-2 Nucleocapsid Protein 基于石墨烯的电化学生物传感检测SARS-Co V-2核衣壳蛋白
2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI: 10.1109/CAS56377.2022.9934109
Bianca Adiaconlţă, P. Preda, T. Burinaru, C. Marculescu, A. Avram, G. Crăciun, E. Chiriac, M. Avram
{"title":"Electrochemical biosensing based on graphene for detection of the SARS-Co V-2 Nucleocapsid Protein","authors":"Bianca Adiaconlţă, P. Preda, T. Burinaru, C. Marculescu, A. Avram, G. Crăciun, E. Chiriac, M. Avram","doi":"10.1109/CAS56377.2022.9934109","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934109","url":null,"abstract":"Monitoring and controlling infection is required in order to prevent the progression of the coronavirus severe acute respiratory syndrome 2(SARS-Co- V-2). To accomplish this goal, the development and implementation of sensitive, quick and accurate diagnostic methods are essential. Electrochemical sensors have exposed large application possibilities in biological detection due to the advantages of high sensitivity, short time-consuming and specificity. Here, we report the improvement of a sensitive electrochemical sensor capable of detecting the presence of the SARS-CoV-2 virus using graphene-modified interdigitated working electrodes functionalized with antibodies targeting the SARS-CoV-2 nucleocapsid protein (N protein).","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117211293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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