I. Stavarache, C. Palade, A. Slav, P. Prepelita, V. Teodorescu, M. Ciurea
{"title":"Extended near infrared photo-response influenced by host matrix change in Ge nanoparticle-based films","authors":"I. Stavarache, C. Palade, A. Slav, P. Prepelita, V. Teodorescu, M. Ciurea","doi":"10.1109/CAS56377.2022.9934586","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934586","url":null,"abstract":"Ge nanoparticles in SiO<inf>2</inf> or Si<inf>3</inf>N<inf>4</inf> on Si pieces at 500 °C were fabricated by sputtering from Ge, SiO<inf>2</inf> or Si<inf>3</inf>N<inf>4</inf> targets. Transmission electron microscopy, current - voltage and spectral-photocurrent characteristics were done to determine the structure and photo-electrical behaviour. Depending on the temperature, the current under illumination, for both films, are comparable and increase with more than 5 orders of magnitude over the dark one. Even if obtaining parameters are similar, photo-current spectra in photovoltaic regime show for Ge:SiO<inf>2</inf> a cut-off wavelength of 1377 nm and an extended sensitivity threshold in near infrared of 1560 nm for Ge:Si<inf>3</inf>N<inf>4</inf>.films.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133040463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Determination of the average pore-size and porosity in collagen by image processing of SEM micrographs","authors":"O. Brîncoveanu, I. Marinaș, P. Preda","doi":"10.1109/CAS56377.2022.9934105","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934105","url":null,"abstract":"In this work we describe a method for measuring the pore size distribution of collagen sponge, which involves image processing of Scanning Electron Microscope (SEM) micrographs. The processing program measures the total area of the pores and calculate its proportion to the total scanned area. A threshold value was set to divide the image into dark areas assumed as pores and bright areas. The porosity of the layer is defined by the ratio between the total volume of the pores to the volume of the entire layer. We compared the porosity obtained by the classical method with the one obtained by SEM image.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121146704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. R. Heris, K. O. Klausen, A. Sitek, S. Erlingsson, A. Manolescu
{"title":"Charge and heat currents in prismatic tubular nanowires","authors":"H. R. Heris, K. O. Klausen, A. Sitek, S. Erlingsson, A. Manolescu","doi":"10.1109/CAS56377.2022.9934669","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934669","url":null,"abstract":"We calculate electronic charge and heat transport in tubular nanowires generated by a temperature gradient or a chemical potential bias. These nanowires correspond to semiconductor core-shell nanowires with insulating (undoped) core and conductive (doped) shell, such that the conduction takes place only in the shell. The cross section of such nanowires is typically polygonal. We study the influence of the cross section shape and shell thickness on the electric and heat conduction of the shell. We use the Landauer-Büttiker approach to calculate the electric and heat currents as a non-linear function of temperature and chemical potential bias beyond the linear regime.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121553150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Pachiu, P. Pascariu, I. V. Tudose, Mirela Petruta Suchea
{"title":"A Raman spectroscopy focused study of the metal dopant effect on ZnO nanostructured thin films","authors":"C. Pachiu, P. Pascariu, I. V. Tudose, Mirela Petruta Suchea","doi":"10.1109/CAS56377.2022.9934395","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934395","url":null,"abstract":"A detailed Raman microscopy and spectroscopy study of metal ions (La, Cr, Al, Fe and Sm) doping of ZnO as nanostructured thin films prepared by spray deposition method is presented. Raman spectroscopy performed under $lambda=532 nm$ excitation at room-temperature is discussed. In particular, analysis of the frequencies, linewidths and width at half maximum (FWHM) of the Raman modes to show the influence of nature of metal dopants effects on the wurtzite crystalline structure of the ZnO nanostructured thin films.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123535912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Tismanar, A. Munteanu, S. Andronache, A. Obreja, O. Buiu, A. Duţă
{"title":"The influence of the UV and UV-VIS radiation on the hydrophilicity of the TiO2 - (r)GO thin films used as photocatalytic self-cleaning coatings","authors":"I. Tismanar, A. Munteanu, S. Andronache, A. Obreja, O. Buiu, A. Duţă","doi":"10.1109/CAS56377.2022.9934449","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934449","url":null,"abstract":"Composites with titanium dioxide (TiO2) matrix and graphene oxide (GO) or reduce graphene oxide (rGO) filler were recently investigated as Vis-active materials in photocatalytic applications. For self-cleaning photocatalytic coatings, the targeted property is the (super)hydrophilicity. The wettability of a surface can be modified by exposure to radiation. This paper discusses the hydrophilicity variation of the TiO2-GO and TiO2-rGO composite thin films when exposed to UV or to UV+VIS radiation correlated with the stability of these composites under irradiation. The results outline changes in the surface hydrophilicity under irradiation mainly following the morphology and roughness modifications.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129497146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Draghiciu, I. V. Tudose, C. Romanițan, R. Gavrila, O. Brîncoveanu, F. Comanescu, C. Pachiu, R. Muller, A. Dinescu, E. Koudoumas, M. Suchea
{"title":"Substrate influence on V2O5growth by spray pyrolisis method","authors":"L. Draghiciu, I. V. Tudose, C. Romanițan, R. Gavrila, O. Brîncoveanu, F. Comanescu, C. Pachiu, R. Muller, A. Dinescu, E. Koudoumas, M. Suchea","doi":"10.1109/CAS56377.2022.9934671","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934671","url":null,"abstract":"Thin films of V<inf>2</inf>O<inf>5</inf>with different thickness were simultaneously grown onto ITO coated glass and simple glass by air carrier spray pyrolysis method. It was observed that the substrate determines a completely different growth of V<inf>2</inf>O<inf>5</inf>material resulting on striking different structural and morphologic features.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127146183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. T. Sultan, A. Tryggvason, U. Arnalds, S. Ingvarsson
{"title":"Effect of VN buffer layer on the magnetic anisotropy of epitaxial Ni80Fe20thin films deposited on MgO (001) substrates","authors":"M. T. Sultan, A. Tryggvason, U. Arnalds, S. Ingvarsson","doi":"10.1109/CAS56377.2022.9934537","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934537","url":null,"abstract":"This study incorporates the structural and magnetic characterization of epitaxial Ni80Fe20 films grown by direct cur-rent magnetron sputtering on MgO(001) and MgO(001)||VN(001) substrates. A series of samples grown with different N2 flow settings for the deposition of VN and similar permalloy deposition parameters was utilized to investigate the effect of morphological evolution and buffer layer induced strain on the magnetic properties of Ni80Fe20. X-ray diffraction analysis reveals an epitaxial nature of the VN(001) and Py(001) films grown on MgO substrates. Angular dependent magneto-optical Kerr effect characterization reveals a cubic anisotropy for Ni80Fe20 on MgO with a coercivity of ~0.8 Gauss along the easy directions. Incorpo-rating an epitaxial VN buffer, the structures showed a transition from a cubic to isotropic magneto-crystalline anisotropy with coercivity varying from 2.5 to 25 Gauss for Ni80Fe20 deposition on VN (with N2 varying from 5 to 12 sccm). The variation is attributed to the microstructural evolution of the Ni80Fe20 to 3D structures along with an induced structural strain.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114552663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Pascu, G. Pristavu, Marius Stoiau, C. Romanițan, Mihaela Kuskol, F. Draghici, Dan Oneaţă, G. Brezeanu
{"title":"The effect of forming gas annealing on Al/Ti/n-Si contacts","authors":"R. Pascu, G. Pristavu, Marius Stoiau, C. Romanițan, Mihaela Kuskol, F. Draghici, Dan Oneaţă, G. Brezeanu","doi":"10.1109/CAS56377.2022.9934472","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934472","url":null,"abstract":"Al/Ti/n-Si contacts without and with post-metallization annealing in forming gas atmosphere are fabricated and characterized. X-ray diffraction measurements are performed in order to identify possible types of silicides that appear after annealing. The results show different phases of Ti silicide, such as TiSi2 and Al5Ti7Si12. The metal/semiconductor contacts are electrically characterized at different temperatures, over a wide range (60 - 500K). For the as-deposited sample, an ohmic-like behavior is observed over almost the whole temperature domain. Instead, the annealed Al/Ti/n-Si contact exhibits Schottky-like behavior with very good performances, as assessed with our p-diode model. It is evinced that, for the 140 - 420K temperature range and 1μA -100mA current interval, a single dominant contact region is responsible for forward current flow. Under lilA and below 140K, it is necessary to consider two additional contact regions in the p-diode model.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122732031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Koudoumas, O. Ionescu, V. Z. Barsukov, Mirela Petruta Suchea
{"title":"Innovative composite materials for electromagnetic shielding","authors":"E. Koudoumas, O. Ionescu, V. Z. Barsukov, Mirela Petruta Suchea","doi":"10.1109/CAS56377.2022.9934416","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934416","url":null,"abstract":"This paper presents an overview of our recent achievements in the area of materials for electromagnetic interference (EMI) shielding applications. In the recent years, excellent carbon allotropes nanomaterials-based paints and carbon allotropes nanomaterials-polymer based composites with excellent shielding properties were successfully fabricated achieving shielding efficiencies from 40 up to 62dBs.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122135870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A novel concept of self-powered plasmonic nanosystem for light detection","authors":"C. Cobianu, M. Gheorghe, M. Modreanu","doi":"10.1109/CAS56377.2022.9934145","DOIUrl":"https://doi.org/10.1109/CAS56377.2022.9934145","url":null,"abstract":"This paper presents an original concept of an on-chip integrated, high-efficiency surface plasmon polaritons (SPP)-enhanced Schottky solar cell, microsupercapacitor and SPP hot electron Schottky photodetector, based on photoactive and electroactive properties of $Sb_{2}S_{3}$ thin films. Novel design configurations of interdigitated photonic and electrochemical devices, allowed the plasmonic devices to have novel multiband, multi-polarization features and which may be used for telecom wavelength band detection (1260–1675) nm.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"64 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131740859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}