Effect of VN buffer layer on the magnetic anisotropy of epitaxial Ni80Fe20thin films deposited on MgO (001) substrates

2022 International Semiconductor Conference (CAS) Pub Date : 2022-10-12 DOI:10.1109/CAS56377.2022.9934537

M. T. Sultan, A. Tryggvason, U. Arnalds, S. Ingvarsson

{"title":"Effect of VN buffer layer on the magnetic anisotropy of epitaxial Ni80Fe20thin films deposited on MgO (001) substrates","authors":"M. T. Sultan, A. Tryggvason, U. Arnalds, S. Ingvarsson","doi":"10.1109/CAS56377.2022.9934537","DOIUrl":null,"url":null,"abstract":"This study incorporates the structural and magnetic characterization of epitaxial Ni80Fe20 films grown by direct cur-rent magnetron sputtering on MgO(001) and MgO(001)||VN(001) substrates. A series of samples grown with different N2 flow settings for the deposition of VN and similar permalloy deposition parameters was utilized to investigate the effect of morphological evolution and buffer layer induced strain on the magnetic properties of Ni80Fe20. X-ray diffraction analysis reveals an epitaxial nature of the VN(001) and Py(001) films grown on MgO substrates. Angular dependent magneto-optical Kerr effect characterization reveals a cubic anisotropy for Ni80Fe20 on MgO with a coercivity of ~0.8 Gauss along the easy directions. Incorpo-rating an epitaxial VN buffer, the structures showed a transition from a cubic to isotropic magneto-crystalline anisotropy with coercivity varying from 2.5 to 25 Gauss for Ni80Fe20 deposition on VN (with N2 varying from 5 to 12 sccm). The variation is attributed to the microstructural evolution of the Ni80Fe20 to 3D structures along with an induced structural strain.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAS56377.2022.9934537","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

This study incorporates the structural and magnetic characterization of epitaxial Ni80Fe20 films grown by direct cur-rent magnetron sputtering on MgO(001) and MgO(001)||VN(001) substrates. A series of samples grown with different N2 flow settings for the deposition of VN and similar permalloy deposition parameters was utilized to investigate the effect of morphological evolution and buffer layer induced strain on the magnetic properties of Ni80Fe20. X-ray diffraction analysis reveals an epitaxial nature of the VN(001) and Py(001) films grown on MgO substrates. Angular dependent magneto-optical Kerr effect characterization reveals a cubic anisotropy for Ni80Fe20 on MgO with a coercivity of ~0.8 Gauss along the easy directions. Incorpo-rating an epitaxial VN buffer, the structures showed a transition from a cubic to isotropic magneto-crystalline anisotropy with coercivity varying from 2.5 to 25 Gauss for Ni80Fe20 deposition on VN (with N2 varying from 5 to 12 sccm). The variation is attributed to the microstructural evolution of the Ni80Fe20 to 3D structures along with an induced structural strain.

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VN缓冲层对MgO(001)衬底外延ni80fe20薄膜磁各向异性的影响

本研究采用直流磁控溅射在MgO(001)和MgO(001)||VN(001)衬底上生长Ni80Fe20外延薄膜的结构和磁性表征。采用不同的N2流量设置和相似的坡莫合金沉积参数，研究了Ni80Fe20的形态演变和缓冲层诱导应变对其磁性能的影响。x射线衍射分析揭示了生长在MgO衬底上的VN(001)和Py(001)薄膜的外延性质。角相关磁光Kerr效应表征表明Ni80Fe20在MgO上具有立方各向异性，沿易方向矫顽力为~0.8高斯。加入外延型VN缓冲液后，Ni80Fe20在VN上(N2为5 ~ 12 sccm)的矫顽力从2.5 ~ 25高斯转变为各向同性磁晶各向异性。这种变化是由于Ni80Fe20的微观组织演变为三维结构以及诱导的结构应变。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2022 International Semiconductor Conference (CAS)

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