T. Sandu, C. Tibeica, O. Nedelcu, R. Plugaru, N. Plugaru
{"title":"Non-linear I-V characteristics of Co/BTO/LSMO ferroelectric tunnel junction","authors":"T. Sandu, C. Tibeica, O. Nedelcu, R. Plugaru, N. Plugaru","doi":"10.1109/CAS56377.2022.9934305","DOIUrl":null,"url":null,"abstract":"The I-V curves of Co/BaTiO3/La0.67Sr0.33MnO3 ferroelectric tunnel junction have been calculated with the non-equilibrium Green function method at finite voltages. Compared to experimental data of a 2 nm thick barrier, our calculations match quantitatively the measurements at room temperature. Further analysis of the electric current shows that transport is done mainly by tunneling (direct and/or Fowler-Nordheim), while the part done through thermally activated resonant states is not relevant for a ferroelectric barrier thickness of 2 nm, but becomes dominant at 4 nm thickness.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAS56377.2022.9934305","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The I-V curves of Co/BaTiO3/La0.67Sr0.33MnO3 ferroelectric tunnel junction have been calculated with the non-equilibrium Green function method at finite voltages. Compared to experimental data of a 2 nm thick barrier, our calculations match quantitatively the measurements at room temperature. Further analysis of the electric current shows that transport is done mainly by tunneling (direct and/or Fowler-Nordheim), while the part done through thermally activated resonant states is not relevant for a ferroelectric barrier thickness of 2 nm, but becomes dominant at 4 nm thickness.