采用标准CMOS技术实现的三种带隙拓扑与寄生PNP双极体的比较

Emilia Gheorghiţă, R. Onet, I. Câmpanu
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引用次数: 0

摘要

本文介绍了CMOS技术中三种完全基于寄生垂直PNP双极晶体管的带隙拓扑结构的比较。设计了一种无opamp带隙、Kuijk拓扑和最近提出的无电阻带隙参考电路(BGR),并从噪声、静态电流、面积和电源抑制等方面进行了比较。本文还提供了无电阻BGR的尺寸策略。该电路采用180nm CMOS工艺实现,目标是低噪声和低功耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparison of three bandgap topologies implemented in standard CMOS technology with parasitic PNP bipolars
This paper presents a comparison between three bandgap topologies that are based exclusively on the parasitic vertical PNP bipolar transistors in the CMOS technologies. An OpAmp-less bandgap, the Kuijk topology and a recently proposed resistorless bandgap reference circuit (BGR) are designed and compared considering noise, quiescent current, area and power supply rejection. A sizing strategy for the resistorless BGR is also provided. The circuits were implemented in a 180nm CMOS process, targeting low noise and low power consumption.
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