Kuan-Ting Wu, E. Vuillermet, Elise Usureau, Y. El-Helou, M. Kazan, W. Woon, M. Lazar, A. Bruyant
{"title":"非破坏性近场显微技术表征碳化硅结构","authors":"Kuan-Ting Wu, E. Vuillermet, Elise Usureau, Y. El-Helou, M. Kazan, W. Woon, M. Lazar, A. Bruyant","doi":"10.1109/CAS56377.2022.9934358","DOIUrl":null,"url":null,"abstract":"SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. Recrystallization has been tried by high temperature annealing with two plateaus at 1400°C and 1700°C. The crystallinity was systematically investigated by non destructive near-field microscopy techniques, particularly adapted to the thin thickness of our layers. Good recrystallization is confirmed only on the e-beam evaporated layers and after the higher annealing plateau by preserving 4H substrate polytype.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SiC structural characterization by non destructive near-field microscopy techniques\",\"authors\":\"Kuan-Ting Wu, E. Vuillermet, Elise Usureau, Y. El-Helou, M. Kazan, W. Woon, M. Lazar, A. Bruyant\",\"doi\":\"10.1109/CAS56377.2022.9934358\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. Recrystallization has been tried by high temperature annealing with two plateaus at 1400°C and 1700°C. The crystallinity was systematically investigated by non destructive near-field microscopy techniques, particularly adapted to the thin thickness of our layers. Good recrystallization is confirmed only on the e-beam evaporated layers and after the higher annealing plateau by preserving 4H substrate polytype.\",\"PeriodicalId\":380138,\"journal\":{\"name\":\"2022 International Semiconductor Conference (CAS)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAS56377.2022.9934358\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAS56377.2022.9934358","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SiC structural characterization by non destructive near-field microscopy techniques
SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. Recrystallization has been tried by high temperature annealing with two plateaus at 1400°C and 1700°C. The crystallinity was systematically investigated by non destructive near-field microscopy techniques, particularly adapted to the thin thickness of our layers. Good recrystallization is confirmed only on the e-beam evaporated layers and after the higher annealing plateau by preserving 4H substrate polytype.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
