2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)最新文献_第5页

Research on the factors affecting warpage of the light guide plate in the process of reliability 对可靠性过程中影响导光板翘曲的因素进行了研究

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915754

Shang Jiantong, Yang Gang, Song Yong, Yu Hongjun, Chen Chuncheng

引用次数: 0

Chlorine effect on copper bonding wire reliability 氯对铜键合线可靠性的影响

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915758

Jinzhi Lois Liao, Bisheng Wang, Xi Zhang, Younan Hua, Xiaomin Li

{"title":"Chlorine effect on copper bonding wire reliability","authors":"Jinzhi Lois Liao, Bisheng Wang, Xi Zhang, Younan Hua, Xiaomin Li","doi":"10.1109/IPFA55383.2022.9915758","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915758","url":null,"abstract":"Currently, wire bonding is still the dominant interconnection mode in microelectronic packaging. Copper (Cu) bonding wire is widely used due to its advantages, such as low-cost and good electrical conductivity. However, Cu wire bond is susceptible to galvanic corrosion. It is well known that Cu wire bond corrosion with the presence of moisture and chlorine (Cl). However, there is few reports on Cl effect on Cu wire bond at elevated temperature.This paper discusses the influence of Cl effect on the Cu wire bond. Different contents of Cl were purposely added into the epoxy molding compound (EMC). Accelerated reliability tests biased highly accelerated stress test (bHAST), temperature humidity ubias test (THT), and high temperature storage test (HTS) were conducted. The purpose is to compare the Cl effect on Cu wire bond reliability under different environments (i.e. temperature, humidity, voltage). It is found that Cl acted as a catalyst in IMC corrosion under humid environment. Cl also caused wire bond failure in HTS test if the Cl content is high. This work can serve as a reference to semiconductor engineers and scientist who use Cu wire bond.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114298408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Supervised Image Retrieval and Ranking Technique for Lock-in Thermography Images 锁定热成像图像的监督图像检索与排序技术

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915757

Rui Zhen Tan, N. Venkatarayalu, I. Atmosukarto, A. Premkumar, Tict Eng Teh, K. K. Thinn, Ming Xue

{"title":"Supervised Image Retrieval and Ranking Technique for Lock-in Thermography Images","authors":"Rui Zhen Tan, N. Venkatarayalu, I. Atmosukarto, A. Premkumar, Tict Eng Teh, K. K. Thinn, Ming Xue","doi":"10.1109/IPFA55383.2022.9915757","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915757","url":null,"abstract":"Lock-in Thermography (LIT) is a non-destructive technique in the failure analysis (FA) of integrated circuits (ICs). In diagnosing the cause of failure, a FA specialist spends a long time searching through a repository of historical images. In this paper, a supervised image retrieval and ranking algorithm incorporating image similarity and classification has been developed. Features are extracted from the images by passing them through the pre-trained VGG16 network. Principal component analysis (PCA) is then performed to identify 100 significant components that serve as signatures for each image and for computing Euclidean distance as the similarity metric. Next, a two-layer classifier replicating the human judgment process has been developed. The first layer of the classifier differentiates whether the query image is taken at the package or die level, whereas the second layer identifies the package or device class of the image. By analyzing the query image through the classifier, its classes in the two layers are determined. The distances of database images belonging to the same classes as the query image are reduced, shifting them ahead. The images thus sorted and ranked are recommended. The algorithm was tested on a dataset of 372 images of which 298 images were used for database construction, and 74 images were used as queried images. The incorporation of class classification improved the precision rate by recommending more images belonging to the same classes as the query.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124716352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Novel and Simple Cross-sectional FIB Circuit Edit Techniques for Circuit Isolation 用于电路隔离的新型简单截面FIB电路编辑技术

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915711

P. K. Tan, Y. L. Pan, S. L. Ting, A. Quah, Y. Tam, A. Teo, N. Xu, H. Thoungh, K. Kang, T. T. Yu, C. Q. Chen

{"title":"Novel and Simple Cross-sectional FIB Circuit Edit Techniques for Circuit Isolation","authors":"P. K. Tan, Y. L. Pan, S. L. Ting, A. Quah, Y. Tam, A. Teo, N. Xu, H. Thoungh, K. Kang, T. T. Yu, C. Q. Chen","doi":"10.1109/IPFA55383.2022.9915711","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915711","url":null,"abstract":"Focused Ion Beam Circuit Edit (FIB-CE) is one of the most commonly used silicon (Si) debug tools that are often used in the semiconductor industry, especially for the new design prototype chip. With the expanding growth of semiconductor applications in different areas, such as next-generation smartphones, automotive, medical equipment, artificial intelligence, RF application, and high power devices, the new prototype chip demand has also increased. Hence, FIB-CE plays an important role in Si debugging for new designs or prototype chips. Among FIB-CE jobs in failure analysis (FA), circuit isolation is one of the common requests. This paper introduces a novel and simple cross-sectional FIB circuit edit (XFIB-CE) techniques for circuit isolation. This technique utilized a normal cross-sectional FIB as a method to cut and isolate the unwanted circuitry. Hence, it is an easier, simpler and more efficient alternative technique for FIB-CE circuit isolation as compared with the top-down FIB-CE milling technique.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128488781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Novel Submicron Spatial Resolution Infrared Microspectroscopy for Failure Analysis of Semiconductor Components 用于半导体元件失效分析的新型亚微米空间分辨率红外微光谱

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915774

Syahirah Zulkifli, Bernice Zee, M. Lo

引用次数: 2

Uncovering the True Defect Behind an Ambiguous Distinct PEM Hotspot Through Micro-Probing and FIB Circuit Edit-PVC Analysis 通过微探测和FIB电路编辑- pvc分析揭示模糊的PEM热点背后的真正缺陷

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915751

N. J. Lagatic, Jerald Santos, Jonelle Mananguit

引用次数: 0

The Application of 2nd Harmonic Laser Voltage Imaging for Timing Failure, Re-Thinning Techniques for Effective Dislocation Identification 二次谐波激光电压成像在时序故障中的应用，再细化技术在有效位错识别中的应用

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915781

S. Liu, Kuang Yuan Chao, H. Chou, Wen Sheng Wu

{"title":"The Application of 2nd Harmonic Laser Voltage Imaging for Timing Failure, Re-Thinning Techniques for Effective Dislocation Identification","authors":"S. Liu, Kuang Yuan Chao, H. Chou, Wen Sheng Wu","doi":"10.1109/IPFA55383.2022.9915781","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915781","url":null,"abstract":"Laser voltage imaging (LVI) and laser voltage probing (LVP) are laser stimulation techniques to verify a device under test (DUT) and have been widely used for circuit debugging and various frequency-dependent failure modes [1] [2]. In this paper, a scan chain with timing failure study was demonstrated by using LVI and LVP techniques, and further physical failure analysis (PFA) found dislocations in bulk silicon by plan view transmission electron microscopy (TEM). However, on checking the depth of dislocations by 3D-TEM, only deep dislocations were found, and it was hard to explain the phenomenon of channel leakage.In this paper, it is not to introduce the methods for dislocation inspection. The major idea is how to distinguish the dislocations those would induce channel leakage. In this work, we presented a re-thinning technique for shallow dislocation inspection by using EasyLift [5]. The EasyLift system allowed operators to extract the lamella and attach it to a TEM grid, all within the dual beam FIB chamber. Because the lamella had attached to TEM grid, lamella re-thinning and acquisition of TEM images could be performed repeatedly [6]. Using this method makes it possible to partially remove the deep dislocations from bulk silicon and then perform 3D-TEM to acquire the actual depth of target of interest.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125629170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Application of Cross-Section EBIC to Localize Junction Anomaly 横截面EBIC在结异常定位中的应用

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915746

F. Rivai, S. L. Ting, P. T. Ng, A. Teo, A. Quah, P. K. Tan, C. Q. Chen

引用次数: 0

Effective Backend Defect Localization by Destructive Fault Isolation 基于破坏性故障隔离的有效后端缺陷定位

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915770

Siew Ming Lim, Jack Yi Jie Ng

引用次数: 0

The Failure Mechanism of the Guard-Rings in Two Different Power Domains during the Latch-Up Test 锁存试验中两种功率域保护环失效机理研究

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915775

Jian-Hsing Lee, Chih-Hsuan Lin, K. Nidhi, Chao-Yang Chen, Yeh-Ning Jou, M. Ker

引用次数: 0