用于半导体元件失效分析的新型亚微米空间分辨率红外微光谱

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI:10.1109/IPFA55383.2022.9915774

Syahirah Zulkifli, Bernice Zee, M. Lo

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引用次数: 2

摘要

本文证明了亚微米光学光热红外光谱(O-PTIR)在半导体元件失效分析中的化学识别能力，而传统的傅里叶变换红外光谱(FTIR)在其他方面受到限制。在本文的案例研究中，O-PTIR可以分析(1)5 μm窄间隙充满强红外吸收体和(2)反射较差区域的不完美样品表面。O-PTIR的多功能性提供了精确的材料化学鉴定，以提高这种具有挑战性的样品的失效分析能力。

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Novel Submicron Spatial Resolution Infrared Microspectroscopy for Failure Analysis of Semiconductor Components

This paper demonstrates the capability of submicron Optical PhotoThermal InfraRed (O-PTIR) spectroscopy in the chemical identification of semiconductor component failures during failure analysis which was otherwise limited by conventional Fourier Transform Infrared Spectroscopy (FTIR). In the case studies presented, O-PTIR could analyze imperfect sample surfaces of (1) a 5 μm narrow gap filled with strong infrared absorbers, and of (2) poorly reflective regions. The versatility of O-PTIR provides precise identification of material chemical identification to improve failure analysis capabilities of such challenging samples.

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2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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