锁存试验中两种功率域保护环失效机理研究

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI:10.1109/IPFA55383.2022.9915775

Jian-Hsing Lee, Chih-Hsuan Lin, K. Nidhi, Chao-Yang Chen, Yeh-Ning Jou, M. Ker

{"title":"锁存试验中两种功率域保护环失效机理研究","authors":"Jian-Hsing Lee, Chih-Hsuan Lin, K. Nidhi, Chao-Yang Chen, Yeh-Ning Jou, M. Ker","doi":"10.1109/IPFA55383.2022.9915775","DOIUrl":null,"url":null,"abstract":"The failure mechanism of latch-up in two different power domains for the high voltage (HV) output driver under the positive trigger current latch-up test is investigated. From the T-CAD, why the guard-rings (GRs) in two different power domains are damaged is found. It is caused by the conductivity modulation effect as the region between two power domains is triggered into the latch-up state. So, this region becomes an intrinsic region (resistor) to induce power short to power, resulting in the GR damage.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Failure Mechanism of the Guard-Rings in Two Different Power Domains during the Latch-Up Test\",\"authors\":\"Jian-Hsing Lee, Chih-Hsuan Lin, K. Nidhi, Chao-Yang Chen, Yeh-Ning Jou, M. Ker\",\"doi\":\"10.1109/IPFA55383.2022.9915775\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The failure mechanism of latch-up in two different power domains for the high voltage (HV) output driver under the positive trigger current latch-up test is investigated. From the T-CAD, why the guard-rings (GRs) in two different power domains are damaged is found. It is caused by the conductivity modulation effect as the region between two power domains is triggered into the latch-up state. So, this region becomes an intrinsic region (resistor) to induce power short to power, resulting in the GR damage.\",\"PeriodicalId\":378702,\"journal\":{\"name\":\"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"107 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA55383.2022.9915775\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA55383.2022.9915775","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了高压输出驱动器在正触发电流闭锁试验下两个不同功率域闭锁失效机理。从T-CAD分析了两个不同功率域的保护环(GRs)损坏的原因。这是由于两个功率域之间的区域被触发进入锁存状态时的电导率调制效应引起的。因此，该区域成为一个本禀区(电阻)，引起功率短路，从而导致GR损坏。

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The Failure Mechanism of the Guard-Rings in Two Different Power Domains during the Latch-Up Test

The failure mechanism of latch-up in two different power domains for the high voltage (HV) output driver under the positive trigger current latch-up test is investigated. From the T-CAD, why the guard-rings (GRs) in two different power domains are damaged is found. It is caused by the conductivity modulation effect as the region between two power domains is triggered into the latch-up state. So, this region becomes an intrinsic region (resistor) to induce power short to power, resulting in the GR damage.

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2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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