2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)最新文献_第4页

Interfacial Adhesion Strength of Group IV-VI Thin Film Deposited on Silicon Nitride 氮化硅表面沉积IV-VI族薄膜的界面粘附强度

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915745

Xintong Zhu, R. R. Nistala, Zhi Qiang Mo

引用次数: 0

Novel Approach to Display Failure on OLED Display Device OLED显示器件显示故障的新方法

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915747

Hoseok Song, Ki-Jong Lee, Yong H. Lee

引用次数: 0

TEM sample preparation for a suspended structure with deep cavity 深空腔悬浮结构的TEM样品制备

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915765

I. Tee, Jie Zhu

引用次数: 0

Atomic Force Probing and Focus Exposure Matrix Analysis to Resolve High Leakage Current Failure on SRAM 原子力探测和聚焦曝光矩阵分析解决SRAM高漏电流故障

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915766

Teck Leong Wee, Handoko Linewih, Sally Chwa, P. K. Tan, A. Quah, P. T. Ng, Hnin Hnin Won, Thoungh Ma, Fransiscus Rivai

引用次数: 0

PinPoint: An SMD Pin Localization Method 一种SMD引脚定位方法

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915720

Nathan Jessurun, Jacob Harrison, M. Tehranipoor, N. Asadizanjani

引用次数: 0

Physical Assurance for Heterogeneous Integration: Challenges and Opportunities 异构集成的物理保证:挑战与机遇

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915749

Chengjie Xi, Aslam A. Khan, Nathan Jessurun, Nidish Vashisthan, M. Tehranipoor, N. Asadizanjani

{"title":"Physical Assurance for Heterogeneous Integration: Challenges and Opportunities","authors":"Chengjie Xi, Aslam A. Khan, Nathan Jessurun, Nidish Vashisthan, M. Tehranipoor, N. Asadizanjani","doi":"10.1109/IPFA55383.2022.9915749","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915749","url":null,"abstract":"Integrated Circuit (IC) hardware assurance is an increasingly concerning topic for semiconductor industries. Because ICs are the industries’ fundamental building blocks, they are consistently targeted for adversarial attacks. Physical inspection methods (i.e., Scanning Electron Microscopy (SEM), X-ray, and THz) are used to verify the IC hardware from the transistor to the device level. However, these inspection methods are difficult to apply to emerging packaging technologies and Heterogeneous Integration (HI) due to their inherent limitations and sample complexity. HI complex nature can provide some inherent features employable as countermeasures. For instance, the material and the structural fingerprints can be used to monitor, verify, and provide device assurance. This paper will introduce potential security vulnerabilities in HI hardware and review various physical inspection methods and their limitations surrounding comprehensive assurance. Both non-destructive and destructive methods will be discussed, ranging from material/structural analysis to transistor-level physical inspection. Insights to the MEMS & NEMS implantation into the package to secure the original design, will be also explored in this paper.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121229045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Case Study For STI-LDNMOS Burned During HCI Stress to Passing Reliability Specifications 在HCI应力下燃烧的STI-LDNMOS通过可靠性规范的案例研究

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915705

Wei-Cheng Chu, B. Tsai, H. Yoshida, Yi-Heng Chen, Yung-Lung Hsu

{"title":"Case Study For STI-LDNMOS Burned During HCI Stress to Passing Reliability Specifications","authors":"Wei-Cheng Chu, B. Tsai, H. Yoshida, Yi-Heng Chen, Yung-Lung Hsu","doi":"10.1109/IPFA55383.2022.9915705","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915705","url":null,"abstract":"The Ibmax (Maximum Substrate Current) of general LDNMOS has two peaks, one is located at Ndrift (N drift region) under Gox, far from the pinch-off point, while the other is close to the pinch-off point [1]. Considering the actual application of the component, we chose the first peak for HCI (Hot Carrier Injection) stress, and found that the 32V symmetry STI-LDNMOS (Shallow Trench Isolation Lateral Diffusion) on different platforms (A and B) seem to have different reasons for burning. The experimental data shows that the component burnout of platform A is similar to the papers published by the authors [2], that is, HCI stress will degrade the diode characteristics of drain to bulk, making the maximum electric field closer to the drain terminal and the kirk effect of IbVg worse. What's interesting is that during the HCI stress of the components on platform B, the measured IdVd, IbVd and IbVg do not have the signs of burning like those of platform A. In order to clarify the reason for its burning, we performed a series of experiments, and finally proved that it may originate from BJT (Bipolar Junction Transistor) being turned on, not HCI induced TDDB (Time Dependent Dielectric Breakdown). Finally, in order to save costs, we chose to change the process conditions of LDNH2 (Ndrift is near the channel) for reducing the implant energy and increasing the concentration to solve the burn-out problem and pass the criteria.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122522479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Physical origin of the permanent components of the positive charge buildup resulting from NBTI/PBTI stress in nMOS/pMOS transistors nMOS/pMOS晶体管中NBTI/PBTI应力引起的正电荷积累的永久元件的物理来源

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915732

F. Palumbo, M. Klebanov, G. Monreal, S. Chetlur

引用次数: 1

Interconnection Reliability on FinFET Devices FinFET器件的互连可靠性

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915773

Xin Yang, Yongkang Xue, Z. Dong, Chaolun Wang, Zhigang Ji, Chihang Tsai, Yongren Wu, Weisong Yu, Runsheng Wang, Xing Wu

{"title":"Interconnection Reliability on FinFET Devices","authors":"Xin Yang, Yongkang Xue, Z. Dong, Chaolun Wang, Zhigang Ji, Chihang Tsai, Yongren Wu, Weisong Yu, Runsheng Wang, Xing Wu","doi":"10.1109/IPFA55383.2022.9915773","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915773","url":null,"abstract":"Reliability issues of semiconductors devices are always related with defects accumulation. Repeatedly switching processes of a semiconductor device could induce the defects accumulation which results in performance degradation. Bulk fin field-effect transistor (FinFET) devices, with a miniaturized three-dimensional structure, have a more complex reliability mechanism that requires detailed research. In this experiment, failure analysis was studied on the same batch of the FinFET devices which suffered performance degradation aging tests at different stress time. During this process, the magnitude of each applied electrical current was not exceeded the operating current. In this work, microstructural and chemical elements differences were characterized by transmission electron microscopy. It is founded that the interconnection part next to the core fin structure was destructed under the electrical over stress (EOS). These phenomena were not observed in the normal FinFET. It can be concluded that the effective contact area of the interconnection part decreased, resulting in the increased internal electrical field. Tungsten (W), as the metal 0 (M0) layer, migrated under defects accumulation. This work paves a guideline for the reliability improvements of FinFET.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115254012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Voltage Electrostatic Discharge Protection Device development in 28nm BCDLite Technology 28nm BCDLite技术高压静电放电保护装置的研制

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI: 10.1109/IPFA55383.2022.9915731

Prantik Mahajan, Vishal Ganesan, N. Subramani, Ruchil Jain, S. Mitra, R. Gauthier

引用次数: 0