Physical origin of the permanent components of the positive charge buildup resulting from NBTI/PBTI stress in nMOS/pMOS transistors

Abstract

It is well established that the bias temperature instability (BTI) mechanism alters the Vth distribution with reliability implications to balanced analog circuits. This paper presents a deep understanding of the mechanisms involved in the permanent components of BTI effects that dominate the long-term reliability projections. By use of CV measurements, the energetic distribution of traps in the bandgap was studied where hydrogen reactions are linked to the positive charge buildup.