氮化硅表面沉积IV-VI族薄膜的界面粘附强度

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI:10.1109/IPFA55383.2022.9915745

Xintong Zhu, R. R. Nistala, Zhi Qiang Mo

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引用次数: 0

摘要

研究了氮化硅(SiN)表面沉积的IV-VI族薄膜(SiCr)的界面粘附强度。采用4点弯曲(4PB)技术寻找粘接最弱的界面。为了提高薄膜叠层的界面完整性，实验了多种界面工程方法。4PB结果表明，工艺条件与表征界面粘附强度的临界载荷Gc之间存在较强的相关性。为了验证脱层界面，进行了俄歇电子能谱(AES)元素分析。

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Interfacial Adhesion Strength of Group IV-VI Thin Film Deposited on Silicon Nitride

The interfacial adhesion strength of group IV-VI thin film (SiCr) deposited on silicon nitride (SiN) is studied. 4-Point-Bending (4PB) technique is employed to discover the interface of weakest adhesion. Multiple methods of interface engineering are experimented to improve interfacial integrity of the thin films stack. 4PB results indicate strong correlation between process condition and critical load Gc, an indicator of interfacial adhesion strength. To validate the interface of de-lamination, elemental analysis by Auger Electron Spectroscopy (AES) is performed.

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2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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