发布求助
文献互助 智能选刊 最新文献

ESSCIRC 76: 2nd European Solid State Circuits Conference最新文献

筛选
英文 中文
Integrable Electronic Gyrators with High Efficiency 高效率可积电子陀螺
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469248
E. Hochmair
{"title":"Integrable Electronic Gyrators with High Efficiency","authors":"E. Hochmair","doi":"10.1109/ESSCIRC.1976.5469248","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469248","url":null,"abstract":"For gyrator applications where higher power capability is needed it is necessary to enhance efficiency over that of presently available circuits which is around 1 percent. Methods to improve efficiency are shown and experimental results are discussed.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132378881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simple Al-Gate-Technology Yields High Bit-Density 简单铝门技术产生高比特密度
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469237
G. Meusburger, Hermann Keller
{"title":"Simple Al-Gate-Technology Yields High Bit-Density","authors":"G. Meusburger, Hermann Keller","doi":"10.1109/ESSCIRC.1976.5469237","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469237","url":null,"abstract":"A single-transistor memory cell in n-channel-Al-gate technology with 2.5 ¿m design rules will be described. Due to a novel design feature a bit density of 5720 bit/mm2 has been achieved.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134289526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 1024 Bits R M M Memory with T T L Compatibility 1024位rmb内存，支持T T L兼容
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469233
E. Mackowiak, V. Le Goascoz
{"title":"A 1024 Bits R M M Memory with T T L Compatibility","authors":"E. Mackowiak, V. Le Goascoz","doi":"10.1109/ESSCIRC.1976.5469233","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469233","url":null,"abstract":"We present a MNOS 1 Kbit R M M memory built on silicon on sapphire. Test results are given and compared to simulation in the 0 - 70°C temperature range.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114851279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A High Performance LSI Circuit Design Strategy 一种高性能LSI电路设计策略
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469096
S. Hollock
{"title":"A High Performance LSI Circuit Design Strategy","authors":"S. Hollock","doi":"10.1109/ESSCIRC.1976.5469096","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469096","url":null,"abstract":"The recent availability of circuits such as PLAs and Gate Arrays has made LSI, with its performance benefits, an economically sound proposition to the low volume user.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133557555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A C-MOS/SOS Technology for Radiation Tolerant Devices 用于耐辐射器件的C-MOS/SOS技术
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/esscirc.1976.5469085
J. Pinel, J. Charlot, J. Suat, J. Borel
{"title":"A C-MOS/SOS Technology for Radiation Tolerant Devices","authors":"J. Pinel, J. Charlot, J. Suat, J. Borel","doi":"10.1109/esscirc.1976.5469085","DOIUrl":"https://doi.org/10.1109/esscirc.1976.5469085","url":null,"abstract":"","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122093829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Standardized Method Reduces Design Time of C-MOS Integrated Circuits and Enables Automatic Checking 一种标准化的方法减少了C-MOS集成电路的设计时间并实现了自动检查
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469083
J. Bertails, J. Zirphile
{"title":"A Standardized Method Reduces Design Time of C-MOS Integrated Circuits and Enables Automatic Checking","authors":"J. Bertails, J. Zirphile","doi":"10.1109/ESSCIRC.1976.5469083","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469083","url":null,"abstract":"A method based on a specific implantation associated with an effort of standardization allows to greatly simplify C-MOS integrated circuit design and checking. In spite of a drastic reduction in the number of the different elementary constituents used, realized circuits exhibit excellent characteristics without prohibitive increase of the chip area.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"38 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123894445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Present and Future of Bipolar Technologies 双极技术的现在和未来
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/esscirc.1976.5469257
V. Blatt
{"title":"Present and Future of Bipolar Technologies","authors":"V. Blatt","doi":"10.1109/esscirc.1976.5469257","DOIUrl":"https://doi.org/10.1109/esscirc.1976.5469257","url":null,"abstract":"","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130406449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithic Nullor
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/esscirc.1976.5469242
J. H. Huijsing, Jacob de Korte
{"title":"Monolithic Nullor","authors":"J. H. Huijsing, Jacob de Korte","doi":"10.1109/esscirc.1976.5469242","DOIUrl":"https://doi.org/10.1109/esscirc.1976.5469242","url":null,"abstract":"The design of a monolithic integrated nullor is presented. It is a universal amplifier building block with a large internal gain and a floating input port and moreover a floating output port.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127419236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Resistance C-MOS Circuits 电阻C-MOS电路
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469084
H. Oguey, E. Vittoz
{"title":"Resistance C-MOS Circuits","authors":"H. Oguey, E. Vittoz","doi":"10.1109/ESSCIRC.1976.5469084","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469084","url":null,"abstract":"By combining dynamic C-MOS circuits with a few passive components, very simple logic circuits with static behavior are obtained (e.g. counters, flip-flops, decoders). In silicon gate technology, the area is nearly half that required for corresponding standard C-MOS circuits.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132322479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Density Monolithic Bipolar and MOS Crosspoint Arrays for Private Branch Telephone Exchanges 用于专用分支电话交换机的高密度单片双极和MOS交叉点阵列
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469250
E. Bachle, H. Clauss, J. Dangel, G. Kohlbacher, K. Schluter, H. SchuBler, H. Wulf
{"title":"High Density Monolithic Bipolar and MOS Crosspoint Arrays for Private Branch Telephone Exchanges","authors":"E. Bachle, H. Clauss, J. Dangel, G. Kohlbacher, K. Schluter, H. SchuBler, H. Wulf","doi":"10.1109/ESSCIRC.1976.5469250","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469250","url":null,"abstract":"The introduction of an N-channel silicon-gate process and an I2L process has significantly improved existing monolithic semiconductor crosspoint arrays with respect to the ON resistance, the OFF attenuation, and the required chip area.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123697450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信