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ESSCIRC 76: 2nd European Solid State Circuits Conference最新文献

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An Improved Monolithic Charge-Sensing Circuit for Analog Arrays 一种改进的单片模拟阵列电荷传感电路
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469240
P. Jespers, C. Jusseret, Y. Leduc, D. Colard, M. Bonnejonne
{"title":"An Improved Monolithic Charge-Sensing Circuit for Analog Arrays","authors":"P. Jespers, C. Jusseret, Y. Leduc, D. Colard, M. Bonnejonne","doi":"10.1109/ESSCIRC.1976.5469240","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469240","url":null,"abstract":"Rapid Charge-Transfer in a saturated field effect transistor may be achieved by means of a feedback loop. A sensitive on-chip amplifier for analog arrays was built using this principle.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"61 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120820867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fault Detection Problems and their Impact on the Design of Digital Circuits 故障检测问题及其对数字电路设计的影响
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469082
M. Diaz, M. Courvoisier, J. Geffroy
{"title":"Fault Detection Problems and their Impact on the Design of Digital Circuits","authors":"M. Diaz, M. Courvoisier, J. Geffroy","doi":"10.1109/ESSCIRC.1976.5469082","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469082","url":null,"abstract":"This communication presents the principal methods for detecting faults in logical structures. As a consequence of their limitations (size of the structures) methods for modifying the circuits in order to obtain easily testable and/or self-checking systems are given.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123709504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Low Drift MOSFET Operational Amplifier A R Z 一种低漂移MOSFET运算放大器
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469246
R. Poujois, J. Ittel, J. Borel
{"title":"A Low Drift MOSFET Operational Amplifier A R Z","authors":"R. Poujois, J. Ittel, J. Borel","doi":"10.1109/ESSCIRC.1976.5469246","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469246","url":null,"abstract":"A R Z is an operational amplifier with very low drift, built in standard MOSFET technology. Input offset voltages less than 3 ¿volts and drift values of this offset voltage less than 0.05 ¿volt/°C are measured.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129348417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Quad JFET Wideband Operational Amplifier IC 四组JFET宽带运算放大器集成电路
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469243
D. Cave, W. Davis
{"title":"Quad JFET Wideband Operational Amplifier IC","authors":"D. Cave, W. Davis","doi":"10.1109/ESSCIRC.1976.5469243","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469243","url":null,"abstract":"This paper describes the design and fabrication of an integrated circuit consisting of four general purpose JFET operational amplifiers each having the following features: internal compensation, unity gain stability, large bandwidth, high slew rate, and low input bias current. This was all made possible by the use of ion-implanted JFET devices and simple circuit techniques.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124546915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Differential MOS-Bipolar Voltage Buffer with Virtually Zero Input Capacitance 几乎为零输入电容的mos双极差分电压缓冲器
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469247
H. de Man, R. Van Parijs, R. Cuppens
{"title":"A Differential MOS-Bipolar Voltage Buffer with Virtually Zero Input Capacitance","authors":"H. de Man, R. Van Parijs, R. Cuppens","doi":"10.1109/ESSCIRC.1976.5469247","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469247","url":null,"abstract":"A new single stage MOS-Bipolar differential amplifier has 60 dB open loop gain, over 10 MHz unity gain bandwidth, input capacitance below 0.1 pF and less than 200 nV/ ¿HZ noise.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129739870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Project on an electrically reprogrammable fast read-out memory using bipolar tetrode transistors 一个使用双极四极晶体管的电可编程快速读出存储器的项目
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469100
J. Dom, P. Roux, J. Aucouturier, M. Depey
{"title":"Project on an electrically reprogrammable fast read-out memory using bipolar tetrode transistors","authors":"J. Dom, P. Roux, J. Aucouturier, M. Depey","doi":"10.1109/ESSCIRC.1976.5469100","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469100","url":null,"abstract":"This paper presents a project on an electrically reprogrammable memory system in which the control of the avalanche degradation of the HFE of bipolar tetrode transistor is executed by the gate voltage. The design of a type REPROM with 1024 bits capacity having an access time better than 100 ns for a total power of 500 mW is attempted.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124294703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transient of Nonlinear Periodic Transient (TNPT) - A New Simulation Feature 非线性周期暂态(TNPT)的暂态——一种新的仿真特性
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469070
H. Strohband, R. Laur
{"title":"Transient of Nonlinear Periodic Transient (TNPT) - A New Simulation Feature","authors":"H. Strohband, R. Laur","doi":"10.1109/ESSCIRC.1976.5469070","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469070","url":null,"abstract":"A new method for transient simulation of nonlinear rf-networks providing excellent stability even for large timesteps is introduced based on the generalisation of the method of Trick et al. /1/","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122268398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
C A D Models of MOSFET Transistors and their Parameter Acquisition on an Automatic System 自动系统中MOSFET晶体管的C - A - D模型及其参数采集
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469080
B. Baylac, G. Merckel
{"title":"C A D Models of MOSFET Transistors and their Parameter Acquisition on an Automatic System","authors":"B. Baylac, G. Merckel","doi":"10.1109/ESSCIRC.1976.5469080","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469080","url":null,"abstract":"We present a parameter automatic acquisition system (S I A M) applied to C A D models of MOSFET transistors. The results are obtained on P channel and N channel, S O S and bulk devices.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130804847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal Coupling Phenomena in IC's: Models for Analysis and Synthesis for Circuits based on Thermal Coupling 集成电路中的热耦合现象:基于热耦合的电路分析与综合模型
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469097
V. Székely, K. Tarnay
{"title":"Thermal Coupling Phenomena in IC's: Models for Analysis and Synthesis for Circuits based on Thermal Coupling","authors":"V. Székely, K. Tarnay","doi":"10.1109/ESSCIRC.1976.5469097","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469097","url":null,"abstract":"The lecture presents a modeling method for the combined electric-thermal effects of monolithic IC's. The method is compatible to the usual computer simulation techniques of electronic circuits. Typical application areas are: analysis of low frequency response of operational amplifiers, design of circuits with temperature-stabilized substrate, thermal functional circuits, etc.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132817756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Speed GaAs Circuits 高速砷化镓电路
ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI: 10.1109/ESSCIRC.1976.5469252
R. Veilex
{"title":"High Speed GaAs Circuits","authors":"R. Veilex","doi":"10.1109/ESSCIRC.1976.5469252","DOIUrl":"https://doi.org/10.1109/ESSCIRC.1976.5469252","url":null,"abstract":"","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124096278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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