{"title":"一种低漂移MOSFET运算放大器","authors":"R. Poujois, J. Ittel, J. Borel","doi":"10.1109/ESSCIRC.1976.5469246","DOIUrl":null,"url":null,"abstract":"A R Z is an operational amplifier with very low drift, built in standard MOSFET technology. Input offset voltages less than 3 ¿volts and drift values of this offset voltage less than 0.05 ¿volt/°C are measured.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A Low Drift MOSFET Operational Amplifier A R Z\",\"authors\":\"R. Poujois, J. Ittel, J. Borel\",\"doi\":\"10.1109/ESSCIRC.1976.5469246\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A R Z is an operational amplifier with very low drift, built in standard MOSFET technology. Input offset voltages less than 3 ¿volts and drift values of this offset voltage less than 0.05 ¿volt/°C are measured.\",\"PeriodicalId\":378614,\"journal\":{\"name\":\"ESSCIRC 76: 2nd European Solid State Circuits Conference\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1976-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 76: 2nd European Solid State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.1976.5469246\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 76: 2nd European Solid State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1976.5469246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
摘要
A rz是一个运算放大器,具有非常低的漂移,内置在标准的MOSFET技术。测量输入偏置电压小于3°v和该偏置电压小于0.05°v /°C的漂移值。
A R Z is an operational amplifier with very low drift, built in standard MOSFET technology. Input offset voltages less than 3 ¿volts and drift values of this offset voltage less than 0.05 ¿volt/°C are measured.