{"title":"A Low Drift MOSFET Operational Amplifier A R Z","authors":"R. Poujois, J. Ittel, J. Borel","doi":"10.1109/ESSCIRC.1976.5469246","DOIUrl":null,"url":null,"abstract":"A R Z is an operational amplifier with very low drift, built in standard MOSFET technology. Input offset voltages less than 3 ¿volts and drift values of this offset voltage less than 0.05 ¿volt/°C are measured.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 76: 2nd European Solid State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1976.5469246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A R Z is an operational amplifier with very low drift, built in standard MOSFET technology. Input offset voltages less than 3 ¿volts and drift values of this offset voltage less than 0.05 ¿volt/°C are measured.