A Low Drift MOSFET Operational Amplifier A R Z

R. Poujois, J. Ittel, J. Borel
{"title":"A Low Drift MOSFET Operational Amplifier A R Z","authors":"R. Poujois, J. Ittel, J. Borel","doi":"10.1109/ESSCIRC.1976.5469246","DOIUrl":null,"url":null,"abstract":"A R Z is an operational amplifier with very low drift, built in standard MOSFET technology. Input offset voltages less than 3 ¿volts and drift values of this offset voltage less than 0.05 ¿volt/°C are measured.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 76: 2nd European Solid State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1976.5469246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

A R Z is an operational amplifier with very low drift, built in standard MOSFET technology. Input offset voltages less than 3 ¿volts and drift values of this offset voltage less than 0.05 ¿volt/°C are measured.
一种低漂移MOSFET运算放大器
A rz是一个运算放大器,具有非常低的漂移,内置在标准的MOSFET技术。测量输入偏置电压小于3°v和该偏置电压小于0.05°v /°C的漂移值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信