{"title":"自动系统中MOSFET晶体管的C - A - D模型及其参数采集","authors":"B. Baylac, G. Merckel","doi":"10.1109/ESSCIRC.1976.5469080","DOIUrl":null,"url":null,"abstract":"We present a parameter automatic acquisition system (S I A M) applied to C A D models of MOSFET transistors. The results are obtained on P channel and N channel, S O S and bulk devices.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"C A D Models of MOSFET Transistors and their Parameter Acquisition on an Automatic System\",\"authors\":\"B. Baylac, G. Merckel\",\"doi\":\"10.1109/ESSCIRC.1976.5469080\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a parameter automatic acquisition system (S I A M) applied to C A D models of MOSFET transistors. The results are obtained on P channel and N channel, S O S and bulk devices.\",\"PeriodicalId\":378614,\"journal\":{\"name\":\"ESSCIRC 76: 2nd European Solid State Circuits Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1976-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 76: 2nd European Solid State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.1976.5469080\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 76: 2nd European Solid State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1976.5469080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
提出了一种适用于模、模、模MOSFET晶体管的参数自动采集系统。在P通道、N通道、S / O / S和块体器件上得到了结果。
C A D Models of MOSFET Transistors and their Parameter Acquisition on an Automatic System
We present a parameter automatic acquisition system (S I A M) applied to C A D models of MOSFET transistors. The results are obtained on P channel and N channel, S O S and bulk devices.