一个使用双极四极晶体管的电可编程快速读出存储器的项目

ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI:10.1109/ESSCIRC.1976.5469100

J. Dom, P. Roux, J. Aucouturier, M. Depey

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引用次数: 0

摘要

本文提出了一种利用栅极电压控制双极四极晶体管HFE雪崩退化的电可编程存储系统方案。尝试设计一种总功率为500mw、容量为1024位、存取时间优于100ns的REPROM。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Project on an electrically reprogrammable fast read-out memory using bipolar tetrode transistors

This paper presents a project on an electrically reprogrammable memory system in which the control of the avalanche degradation of the HFE of bipolar tetrode transistor is executed by the gate voltage. The design of a type REPROM with 1024 bits capacity having an access time better than 100 ns for a total power of 500 mW is attempted.

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ESSCIRC 76: 2nd European Solid State Circuits Conference

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