{"title":"简单铝门技术产生高比特密度","authors":"G. Meusburger, Hermann Keller","doi":"10.1109/ESSCIRC.1976.5469237","DOIUrl":null,"url":null,"abstract":"A single-transistor memory cell in n-channel-Al-gate technology with 2.5 ¿m design rules will be described. Due to a novel design feature a bit density of 5720 bit/mm2 has been achieved.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simple Al-Gate-Technology Yields High Bit-Density\",\"authors\":\"G. Meusburger, Hermann Keller\",\"doi\":\"10.1109/ESSCIRC.1976.5469237\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A single-transistor memory cell in n-channel-Al-gate technology with 2.5 ¿m design rules will be described. Due to a novel design feature a bit density of 5720 bit/mm2 has been achieved.\",\"PeriodicalId\":378614,\"journal\":{\"name\":\"ESSCIRC 76: 2nd European Solid State Circuits Conference\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1976-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 76: 2nd European Solid State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.1976.5469237\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 76: 2nd European Solid State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1976.5469237","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A single-transistor memory cell in n-channel-Al-gate technology with 2.5 ¿m design rules will be described. Due to a novel design feature a bit density of 5720 bit/mm2 has been achieved.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
