High Density Monolithic Bipolar and MOS Crosspoint Arrays for Private Branch Telephone Exchanges

ESSCIRC 76: 2nd European Solid State Circuits Conference Pub Date : 1976-09-01 DOI:10.1109/ESSCIRC.1976.5469250

E. Bachle, H. Clauss, J. Dangel, G. Kohlbacher, K. Schluter, H. SchuBler, H. Wulf

引用次数: 1

Abstract

The introduction of an N-channel silicon-gate process and an I2L process has significantly improved existing monolithic semiconductor crosspoint arrays with respect to the ON resistance, the OFF attenuation, and the required chip area.

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用于专用分支电话交换机的高密度单片双极和MOS交叉点阵列

n通道硅栅工艺和I2L工艺的引入在ON电阻、OFF衰减和所需芯片面积方面显著改善了现有的单片半导体交叉点阵列。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

ESSCIRC 76: 2nd European Solid State Circuits Conference

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