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Thin Film Physics and Applications最新文献

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Stimulated and spontaneous emissions in Zd0.8Cd0.2Se-ZnSe strained layer superlattice with Fabry-Perot cavity 具有Fabry-Perot腔的Zd0.8Cd0.2Se-ZnSe应变层超晶格中的受激辐射和自发辐射
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300657
Zhuhong Zheng, Z. Guan, Xiwu Fan
{"title":"Stimulated and spontaneous emissions in Zd0.8Cd0.2Se-ZnSe strained layer superlattice with Fabry-Perot cavity","authors":"Zhuhong Zheng, Z. Guan, Xiwu Fan","doi":"10.1117/12.300657","DOIUrl":"https://doi.org/10.1117/12.300657","url":null,"abstract":"The transformation from stimulated to spontaneous emissions at 77K is performed in Zn0.8Cd0.2Se-ZnSe strained layer superlattice (SLS) with Fabry-Perot cavity. It is found that the lasing oscillation modes disappear and the stimulated emission is transformed into the amplified spontaneous emission owing to the phase space filling effect of exciton states under higher excitation density.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124044172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
General one-dimensional computation formula and application to donor binding energy in GaAs-Ga1-xAlxAs superlattice GaAs-Ga1-xAlxAs超晶格中施主结合能的一维通用计算公式及应用
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300660
S. Jiao, G. Jiang, Shujuan Wang, Benli Yang
{"title":"General one-dimensional computation formula and application to donor binding energy in GaAs-Ga1-xAlxAs superlattice","authors":"S. Jiao, G. Jiang, Shujuan Wang, Benli Yang","doi":"10.1117/12.300660","DOIUrl":"https://doi.org/10.1117/12.300660","url":null,"abstract":"In this paper, the general formula was found for one- dimensional computation of GaAs-Ga1-xAlxAs superlattice or quantum well. The formula can be used to calculate donor binding energy in external field using the effective-mass approximation. The effect of superlattice structure and different external fields were expressed as potential energy item V vector (r) in Hamiltonian. The results were of universal significance in a certain sense and application prospects for developing new material.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128542100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PL study of QDs manufactured by visible light lithography and wet etching 可见光光刻和湿法蚀刻制备量子点的PL研究
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300716
Xingquan Liu, M. Wan, Bo Zhang, Xiaoshuang Chen, W. Lu, S. Shen
{"title":"PL study of QDs manufactured by visible light lithography and wet etching","authors":"Xingquan Liu, M. Wan, Bo Zhang, Xiaoshuang Chen, W. Lu, S. Shen","doi":"10.1117/12.300716","DOIUrl":"https://doi.org/10.1117/12.300716","url":null,"abstract":"Manufacture of AlGaAs/GaAs QDs by visible light lithography and etching is accomplished in this paper, and the size distribution is studied by smaill-spotted PL. The broadening of PL peaks which is caused by the fluctuation of quantum well is studied.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132429445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated ferroelectric thin films for electronic devices of the future 用于未来电子器件的集成铁电薄膜
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300732
R. Bruchhaus, W. Wersing
{"title":"Integrated ferroelectric thin films for electronic devices of the future","authors":"R. Bruchhaus, W. Wersing","doi":"10.1117/12.300732","DOIUrl":"https://doi.org/10.1117/12.300732","url":null,"abstract":"Worldwide the incorporation of ferroelectric thin films in the future generations of DRAMs and in memory devices in which the remnant polarization is used to achieve a non volatile data storage (FeRAMs) is under intense investigation. Currently all the leading companies in the memory chip business are running programs to integrate the new materials into their semiconductor fabrication. On a smaller scale, but also expected as rapidly growing in the near future are thin film pyroelectric detector arrays for the presence and motion detection of persons in a wide range of applications. Currently three materials are favored for these three applications: For the storage capacitor of the DRAMs (Ba,Sr)TiO3, for the FeRAMs SrBi2Ta2O9 and for the pyroelectric detector arrays lead based perovskites like PbTiO3 and Pb(Zr, Ti)O3(PZT). The focus of this paper is thin film pyroelectric detector arrays on silicon substrates using PZT thin films as pyroelectric material. A planar multi-target approach was used to deposit PZT films on Pt electrodes at very low substrate temperatures of about 450 degrees Celsius. These films have been used for fabricating a two dimensional 11 by 6 pixel pyroelectric detector array for motion detection. The array pixels with a sensitive area of 280 by 280 micrometer2 have a noise equivalent power NEP of less than 0.7 nW at 1 Hz.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116080243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Poole-Frenkel conduction in antimony-doped tin selenide thin films 掺锑硒化锡薄膜的普尔-弗伦克尔导电
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300686
S. Sakrani, S. A. Jabar
{"title":"Poole-Frenkel conduction in antimony-doped tin selenide thin films","authors":"S. Sakrani, S. A. Jabar","doi":"10.1117/12.300686","DOIUrl":"https://doi.org/10.1117/12.300686","url":null,"abstract":"Tin selenide thin films have been prepared onto glass substrates at a temperature 240 degrees Celsius and fixed film thickness by means of a solid state reaction process at pressure about 10-5 mbar. Low level antimony doping was maintained at a concentration 1.8%. The dark current- voltage measurements have been performed on the sandwiched structures of Al-SnSe-Al and Al-SnSe:Sb-Al at temperatures in the range 143 - 300 K, and the results showed a ln J varies direct as V1/2 dependence which was indicative of the Poole-Frenkel effect. It was found that, the calculated field-lowering coefficients, (beta) p for the latter samples (3.71 - 4.81 X 10-5 eV m1/2 V-1/2) were higher than the predicted value (2.18 X 10-5 eV m1/2 V-1/2) by a factor of 1.71 - 2.21. These were further confirmed by the linear dependence of the graphs's slope and inverse of temperature. The results were explained in terms of lowering potential barrier by the interaction of electron with applied electric field.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121135154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation and electrical properties of Zr-rich PZT thin films by rf magnetron sputtering method using multitarget 多靶射频磁控溅射法制备富锆PZT薄膜及其电学性能
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300705
Wensheng Wang, Zhiming Chen, M. Adachi, A. Kawabata
{"title":"Preparation and electrical properties of Zr-rich PZT thin films by rf magnetron sputtering method using multitarget","authors":"Wensheng Wang, Zhiming Chen, M. Adachi, A. Kawabata","doi":"10.1117/12.300705","DOIUrl":"https://doi.org/10.1117/12.300705","url":null,"abstract":"Zr-rich lead zirconate titanate (PZT) thin films with a thickness of 1 micrometer were successfully grown on (111)PLT/Pt(111)/Ti(101)/SiO2/Si(100) substrates by an rf planar magnetron sputtering equipment using a multi-target which consisted of PbO and metal titanium pellets on a zirconium metal plate. The optimum sputtering conditions were a gas content of Ar:O2 equals 8:2 Sccm, gas pressure of 6 X 10-3 Torr, rf power of 100 W and substrate temperatures of 630 - 650 degrees Celsius. The composition of the films could be controlled by adjusting the area ratio of PbO/Zr/Ti. The crystal structures of films were sensitive to the substrate temperature. The pyroelectric current, relative dielectric constant, remanent polarization and coercive field of the PZT films were measured. These electrical properties depending on the ratio of Zr/Ti in the films are described. The phase transition of low temperature to high temperature rhombohedral ferroelectric phases in as-grown PZT films is also reported. Zr-rich PZT films sputtered on (111)PLT/Pt/Ti/SiO2/Si substrate possess desirable properties for potential applications to pyroelectric devices.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121476641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical storage performance of cyanine film prepared by spin-coating process 旋涂法制备菁膜的光存储性能
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300698
Xiaodong Tang, Fulong Tang, D. Gu, F. Gan
{"title":"Optical storage performance of cyanine film prepared by spin-coating process","authors":"Xiaodong Tang, Fulong Tang, D. Gu, F. Gan","doi":"10.1117/12.300698","DOIUrl":"https://doi.org/10.1117/12.300698","url":null,"abstract":"In this paper, a cyanine film has been prepared by spin- coating process on the pre-grooved polycarbonate substrate. The transmission, reflection and absorption spectra of the film were measured. The complex refractive index n, k of the film was calculated. Under the recording condition specified by CD-R Orange Book, the carrier to noise ratio (CNR) of the single dye layer disk are greater than 47 dB at traveling rate of 1.4 m/s, 2.8 m/s, and 5.6 m/s. The estimated lifetime of the CD-R using this dye film as the recording medium reaches up to 10 years under normal using condition.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122931568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Magnetoresistance in Cu-Co granular films and Co/Cu/Co sandwiches Cu-Co颗粒膜和Co/Cu/Co夹层的磁阻
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300724
H. Wang, Q. Jin, C. Chu, Yuanhua Shen, Hanfeng Chen, Feiming Li, Q. Bie, M. Lu, H. Zhai
{"title":"Magnetoresistance in Cu-Co granular films and Co/Cu/Co sandwiches","authors":"H. Wang, Q. Jin, C. Chu, Yuanhua Shen, Hanfeng Chen, Feiming Li, Q. Bie, M. Lu, H. Zhai","doi":"10.1117/12.300724","DOIUrl":"https://doi.org/10.1117/12.300724","url":null,"abstract":"Cu1-xCOx granular films with x equals 19, 27, 43, and 45 achieved by sputtering with different argon gas pressure are studied by the magnetic and magnetoresistance measurement. With the increase of the sputter argon gas pressure P, the remanence and coercive force increases, but the MR ratio has a maximum value around P equals 1.5 Pa, confirming that a proper size of Co grains and a suitable concentration are required for the large MR. And for Co/Cu/Co sandwiches, we found there was an MR ration oscillation as Cu layer thickness was varied.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123191199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Crystalline and electrical properties of SrBi2Ta2O9 thin films prepared by laser ablation 激光烧蚀制备SrBi2Ta2O9薄膜的晶体和电学性能
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300688
Y. Oishi, Y. Matsumuro, M. Okuyama
{"title":"Crystalline and electrical properties of SrBi2Ta2O9 thin films prepared by laser ablation","authors":"Y. Oishi, Y. Matsumuro, M. Okuyama","doi":"10.1117/12.300688","DOIUrl":"https://doi.org/10.1117/12.300688","url":null,"abstract":"SrBi2Ta2O9 thin films are prepared on Pt sheets by the laser ablation method using an ArF excimer laser below 560 degrees Celsius. Crystallographic properties of the film are characterized as parameters of substrate temperature, O2 or N2O gas pressure and laser repetition frequency. SrBi2Ta2O9 thin films are oriented preferentially to (105) on Pt sheets. The depth profile of x-ray photoelectron spectra (XPS) reveals a homogeneous composition and XPS signals of Bi suggest oxygen deficiency of the film on Pt sheet. The films deposited on Pt sheet consist of spherical grains of about 100 nm diameter. D-E hysteresis loops is observed at SrBi2Ta2O9 thin film deposited on Pt sheet. The remanent polarization was 2.5 (mu) C/cm2 and coercive force was 34 kV/cm.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"1128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129257506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation and physical properties of MoO3 thin films MoO3薄膜的制备及其物理性能
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300703
M. Yahaya, M. Salleh, I. Talib, N. M. Nor
{"title":"Preparation and physical properties of MoO3 thin films","authors":"M. Yahaya, M. Salleh, I. Talib, N. M. Nor","doi":"10.1117/12.300703","DOIUrl":"https://doi.org/10.1117/12.300703","url":null,"abstract":"Thin films of MoO3 were prepared by electron beam evaporation technique. The films were deposited onto glass substrates maintained at temperatures in the range 100 - 250 degrees Celsius. The films were characterized by studying their structure, electrical and optical properties. The films formed at 100 degrees Celsius are amorphous with conductivity of about 2.5 X 10-5 (Omega) -1 cm-1. The effect of deposition temperature on the properties of the films were studied and discussed.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124069090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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