Crystalline and electrical properties of SrBi2Ta2O9 thin films prepared by laser ablation

Y. Oishi, Y. Matsumuro, M. Okuyama
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Abstract

SrBi2Ta2O9 thin films are prepared on Pt sheets by the laser ablation method using an ArF excimer laser below 560 degrees Celsius. Crystallographic properties of the film are characterized as parameters of substrate temperature, O2 or N2O gas pressure and laser repetition frequency. SrBi2Ta2O9 thin films are oriented preferentially to (105) on Pt sheets. The depth profile of x-ray photoelectron spectra (XPS) reveals a homogeneous composition and XPS signals of Bi suggest oxygen deficiency of the film on Pt sheet. The films deposited on Pt sheet consist of spherical grains of about 100 nm diameter. D-E hysteresis loops is observed at SrBi2Ta2O9 thin film deposited on Pt sheet. The remanent polarization was 2.5 (mu) C/cm2 and coercive force was 34 kV/cm.
激光烧蚀制备SrBi2Ta2O9薄膜的晶体和电学性能
采用温度低于560℃的ArF准分子激光烧蚀法制备了SrBi2Ta2O9薄膜。薄膜的晶体学性能由衬底温度、O2或N2O气体压力和激光重复频率等参数表征。SrBi2Ta2O9薄膜在Pt片上优先取向于(105)。x射线光电子能谱(XPS)深度剖面显示其成分均匀,而Bi的XPS信号表明Pt片上的薄膜缺氧。沉积在铂片上的薄膜由直径约为100nm的球形颗粒组成。在Pt薄片上沉积的SrBi2Ta2O9薄膜上观察到D-E磁滞回。剩余极化为2.5 (mu) C/cm2,矫顽力为34 kV/cm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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