可见光光刻和湿法蚀刻制备量子点的PL研究

Thin Film Physics and Applications Pub Date : 1998-02-20 DOI:10.1117/12.300716

Xingquan Liu, M. Wan, Bo Zhang, Xiaoshuang Chen, W. Lu, S. Shen

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摘要

本文采用可见光光刻和蚀刻技术制备了AlGaAs/GaAs量子点，并利用小点状PL研究了其尺寸分布，研究了量子阱涨落引起的PL峰展宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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PL study of QDs manufactured by visible light lithography and wet etching

Manufacture of AlGaAs/GaAs QDs by visible light lithography and etching is accomplished in this paper, and the size distribution is studied by smaill-spotted PL. The broadening of PL peaks which is caused by the fluctuation of quantum well is studied.

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Thin Film Physics and Applications

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