MoO3薄膜的制备及其物理性能

M. Yahaya, M. Salleh, I. Talib, N. M. Nor
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摘要

采用电子束蒸发技术制备了MoO3薄膜。薄膜被沉积在玻璃基板上,保持在100 - 250摄氏度的温度范围内。通过研究薄膜的结构、电学和光学性质对其进行了表征。在100摄氏度下形成的薄膜是无定形的,电导率约为2.5 X 10-5 (Omega) -1 cm-1。研究和讨论了沉积温度对薄膜性能的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Preparation and physical properties of MoO3 thin films
Thin films of MoO3 were prepared by electron beam evaporation technique. The films were deposited onto glass substrates maintained at temperatures in the range 100 - 250 degrees Celsius. The films were characterized by studying their structure, electrical and optical properties. The films formed at 100 degrees Celsius are amorphous with conductivity of about 2.5 X 10-5 (Omega) -1 cm-1. The effect of deposition temperature on the properties of the films were studied and discussed.
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