{"title":"GaAs-Ga1-xAlxAs超晶格中施主结合能的一维通用计算公式及应用","authors":"S. Jiao, G. Jiang, Shujuan Wang, Benli Yang","doi":"10.1117/12.300660","DOIUrl":null,"url":null,"abstract":"In this paper, the general formula was found for one- dimensional computation of GaAs-Ga1-xAlxAs superlattice or quantum well. The formula can be used to calculate donor binding energy in external field using the effective-mass approximation. The effect of superlattice structure and different external fields were expressed as potential energy item V vector (r) in Hamiltonian. The results were of universal significance in a certain sense and application prospects for developing new material.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"General one-dimensional computation formula and application to donor binding energy in GaAs-Ga1-xAlxAs superlattice\",\"authors\":\"S. Jiao, G. Jiang, Shujuan Wang, Benli Yang\",\"doi\":\"10.1117/12.300660\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the general formula was found for one- dimensional computation of GaAs-Ga1-xAlxAs superlattice or quantum well. The formula can be used to calculate donor binding energy in external field using the effective-mass approximation. The effect of superlattice structure and different external fields were expressed as potential energy item V vector (r) in Hamiltonian. The results were of universal significance in a certain sense and application prospects for developing new material.\",\"PeriodicalId\":362287,\"journal\":{\"name\":\"Thin Film Physics and Applications\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-02-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Thin Film Physics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.300660\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thin Film Physics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.300660","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
General one-dimensional computation formula and application to donor binding energy in GaAs-Ga1-xAlxAs superlattice
In this paper, the general formula was found for one- dimensional computation of GaAs-Ga1-xAlxAs superlattice or quantum well. The formula can be used to calculate donor binding energy in external field using the effective-mass approximation. The effect of superlattice structure and different external fields were expressed as potential energy item V vector (r) in Hamiltonian. The results were of universal significance in a certain sense and application prospects for developing new material.
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