2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献

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Multiphysics modeling for current carrying capability of a power package 电源包载流能力的多物理场建模
Qiuxiao Qian, Yumin Liu, Y. Liu
{"title":"Multiphysics modeling for current carrying capability of a power package","authors":"Qiuxiao Qian, Yumin Liu, Y. Liu","doi":"10.1109/EUROSIME.2014.6813797","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813797","url":null,"abstract":"In this paper, the impact of the lead frame design on the current carrying capability of the a power package is investigated. The coupled electrical-thermal and mechanical stress simulations are conducted, with the transient characteristics captured. The DoE simulations with regard to different lead frame design, different currents, and micro crack impact are studied to find the impact on current carrying capability. The simulation results show that the twisted Z shape lead design induces the highest stress level when the initial crack was induced by the assembly process, which could speed up the failure and reduce the current carrying capability.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129583201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical simulations of piezoelectric MEMS energy harvesters 压电式MEMS能量采集器的数值模拟
G. Gafforelli, R. Ardito, A. Corigliano, C. Valzasina, F. Procopio
{"title":"Numerical simulations of piezoelectric MEMS energy harvesters","authors":"G. Gafforelli, R. Ardito, A. Corigliano, C. Valzasina, F. Procopio","doi":"10.1109/EUROSIME.2014.6813825","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813825","url":null,"abstract":"The application of piezoelectric materials in MEMS energy harvesters is continuously increasing, with the immediate corollary of a fundamental need for improved computational tools in order to optimize the performances at the design level. In this paper, a refined, yet simple model is proposed with the aim of providing fast and insightful solutions to the multi-physics problem of piezoelectric energy harvesting. The main objective is to retain a simple structural model (Euler-Bernoulli beam), with the inclusion of effects connected to the actual three-dimensional shape of the device. A thorough presentation of the analytical model is presented, along with its validation by comparison with the results of full 3D computations.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125633212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Multiphysics modelling of the fabrication and operation of a micro-pellistor device 微造粒机装置制造和操作的多物理场建模
Ferenc Bíró, Z. Hajnal, A. Pap, I. Bársony
{"title":"Multiphysics modelling of the fabrication and operation of a micro-pellistor device","authors":"Ferenc Bíró, Z. Hajnal, A. Pap, I. Bársony","doi":"10.1109/EUROSIME.2014.6813867","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813867","url":null,"abstract":"Downsizing efforts in gas-sensing applications lead to ever smaller active elements. Integration with data processing circuitry requires the use of CMOS compatible fabrication technology, autonomous operation poses limits on energy consumption of the elements, whereas reliable catalytic detection often needs high temperatures that may otherwise be constrained by safety considerations. Under these conditions, development of active sensor elements proves to be a growing challenge for design and fabrication.In this work we present a step-by-step study on a ≈500 J.lm diameter thermally isolated membrane element of a gas detecting microsensor device. Sensitivity is based on high temperature (≈3-400 0C) catalytic activity of a porous pellistor deposited on a multilayer SiO2/SiNx - filament heated - membrane that has to be durable enough for several thousand hours of operation, and as thin as possible to reduce heat conduction to the substrate. SiO2 membranes tend to show high residual stress that can be significantly reduced by \"sandwiching\" with SiNx. We have used COMSOL Multiphysics® 4.3a [I] to assist the initial product design, and evaluation of operational constrains of the multi-layer thin film. The first part involved systematic thermo-mechanical iterations, while the latter consisted of a combination of gradual static thermo-electro-mechanical simulation steps. As shown by simulating the steps of the deposition process in this work, the right combination of different techniques produces a stable 4-layer membrane with only a sub-micron deformation, and tolerable residual stresses after membrane forming (substrate removal) and during operation. Also, the pellistor filament heating power should be minimized and still reach the operating temperature of the catalyst hotspot. This design, supported by our model calculation was used to realize the device with targeted characteristics. The structure endures the distortion and thermal expansion and contraction during the heating cycles, whereas low power operation widens the range of possible applications.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"13 19","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120843415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Software reliability and its interaction with hardware reliability 软件可靠性及其与硬件可靠性的相互作用
W. V. van Driel, M. Schuld, R. Wijgers, W. E. J. van Kooten
{"title":"Software reliability and its interaction with hardware reliability","authors":"W. V. van Driel, M. Schuld, R. Wijgers, W. E. J. van Kooten","doi":"10.1109/EUROSIME.2014.6813774","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813774","url":null,"abstract":"Software reliability models can provide quantitative measures of the reliability of software systems during development processes. Research activities in software reliability engineering are conducted over the past four decades, and many software reliability models are proposed. In this paper we will present our results in predicting the reliability of software and how that relates to the reliability of hardware.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130978659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
B-field characterization and equivalent circuit modeling of a poly-SiGe-MEMS based Xylophone Bar Magnetometer 基于多sige - mems的木琴棒磁强计的b场表征和等效电路建模
M. Farghaly, V. Rochus, X. Rottenberg, U. S. Mohammed, H. Tilmans
{"title":"B-field characterization and equivalent circuit modeling of a poly-SiGe-MEMS based Xylophone Bar Magnetometer","authors":"M. Farghaly, V. Rochus, X. Rottenberg, U. S. Mohammed, H. Tilmans","doi":"10.1109/EUROSIME.2014.6813838","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813838","url":null,"abstract":"This paper reports a quantitative characterization of a poly-SiGe MEMS-based Xylophone Bar Magnetometer (XBM), thereby following a novel characterization method that is based on the measurement of the forward/backward transmission gains S21/S21 of the XBM treated as a two-port network. More specifically, this was done through monitoring the absolute amplitude of the resonant peaks of S21 and S12 with changing magnetic induction B. Also, we present for the first time a novel equivalent circuit for the two-port XBM, modeling effectively the electro-magneto-mechanical behavior of the magnetometer. The experimental measurements showed that poly-SiGe XBM is capable of being a linear magnetic sensor in mT range with a sensitivity 0.1dB=mT with an excitation power 5dBm fed to the electrodynamic/electrostatic port and a biasing voltage 14V applied through the sense/drive capacitor.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132508466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
System reliability for LED-based products 基于led产品的系统可靠性
J. Davis, K. Mills, M. Lamvik, Robert Yaga, Sarah D. Shepherd, James Bittle, Nicholas G. Baldasaro, Eric Solano, G. Bobashev, C. Johnson, Amy Evans
{"title":"System reliability for LED-based products","authors":"J. Davis, K. Mills, M. Lamvik, Robert Yaga, Sarah D. Shepherd, James Bittle, Nicholas G. Baldasaro, Eric Solano, G. Bobashev, C. Johnson, Amy Evans","doi":"10.1109/EUROSIME.2014.6813879","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813879","url":null,"abstract":"Results from accelerated life tests (ALT) on mass-produced commercially available 6\" downlights are reported along with results from commercial LEDs. The luminaires capture many of the design features found in modern luminaires. In general, a systems perspective is required to understand the reliability of these devices since LED failure is rare. In contrast, components such as drivers, lenses, and reflector are more likely to impact luminaire reliability than LEDs.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129000513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Thermal performance of embedded heat pipe in high power density LED streetlight module 高功率密度LED路灯模组中嵌入式热管热性能研究
Hongyu Tang, Jia Zhao, Bo Li, S. Leung, C. Yuan, G. Zhang
{"title":"Thermal performance of embedded heat pipe in high power density LED streetlight module","authors":"Hongyu Tang, Jia Zhao, Bo Li, S. Leung, C. Yuan, G. Zhang","doi":"10.1109/EUROSIME.2014.6813883","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813883","url":null,"abstract":"The excellence of energy efficiency and reliability of LED attract the application of outdoor area lighting. The trends toward increase of power density while minimizing the structure, made the heat dissipation design challenging. The thermal performance of a novel streetlight module with embedded heat pipe is investigated in this study. The thermal performance of the new module is compared with a common module with only metal fins design. The thermal capabilities, including temperature uniformity and thermal resistance of heat pipe under different heat loads have been investigated experimentally and analyzed using finite element modeling. The comparison of the thermal properties is presented, and the implication on design capability and reliability is discussed.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121440387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Description of the thermo-mechanical properties of a Sn-based solder alloy by a unified viscoplastic material model for Finite Element calculations 用统一黏塑性材料模型描述锡基钎料合金的热力学性能
A. Kabakchiev, B. Métais, R. Ratchev, M. Guyenot, P. Buhl, M. Hossfeld, X. Schuler, R. Metasch, M. Roellig
{"title":"Description of the thermo-mechanical properties of a Sn-based solder alloy by a unified viscoplastic material model for Finite Element calculations","authors":"A. Kabakchiev, B. Métais, R. Ratchev, M. Guyenot, P. Buhl, M. Hossfeld, X. Schuler, R. Metasch, M. Roellig","doi":"10.1109/EUROSIME.2014.6813771","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813771","url":null,"abstract":"Automotive electronic devices are exposed to substantially harsher thermo-mechanical loads compared to commercial consumer electronic products. As a consequence, solder joints carrying out the electrical interconnection between the components undergo deformation and degradation under thermal cycling, which can determine the lifetime of the electronic assembly in long term operation. In the past decade, lifetime prediction methods for solder joints based on finite element (FE) simulations are increasingly employed in the process of product design. However, constitutive FE models for solder alloys capable of describing their mechanical behavior at the relevant conditions of automotive applications are still not widely established. Here, we employ a unified viscoplastic material model initially proposed by Chaboche et al. in order to address the mechanical properties of an as-casted Sn-based solder alloy under a cyclic mechanical load. Extensive experimental investigations at temperatures from -40°C up to +150°C reveal a complex nonlinear interplay between hardening, recovery and thermally activated inelastic deformation processes in the material studied. We identified the necessary constitutive model terms and performed parameter calibration according to their specific functionality. A very good agreement between the numerical calculations and experimental data is achieved, which renders the constitutive model used a very promising approach for a wide use in FE simulations of lead-free solder alloys.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128597281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Theoretical and experimental study of thermal management in high-power AlInGaN LEDs 大功率AlInGaN led热管理的理论与实验研究
A. Chernyakov, A. L. Zakgeim, K. Bulashevich, S. Karpov, V. Smirnov, V. Sergeev
{"title":"Theoretical and experimental study of thermal management in high-power AlInGaN LEDs","authors":"A. Chernyakov, A. L. Zakgeim, K. Bulashevich, S. Karpov, V. Smirnov, V. Sergeev","doi":"10.1109/EUROSIME.2014.6813819","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813819","url":null,"abstract":"Current spreading in a high-power flip-chip light-emitting diode (LED) and its effect on the chip thermal resistance has been studied both theoretically and experimentally. Thermal resistances of various LED units have been determined by measuring the forward voltage relaxation under pulsed current excitation of the LED at varied duty cycle. The total thermal resistance of the chip is found to rise by ~20% while the LED operating current increasing from zero to 1 A. The current density distribution in the LED active region predicted by coupled simulations of the current spreading and heat transfer agrees well with the measured near-field distribution of the light emission intensity. The observed rise in the thermal resistance is attributed to current crowding producing lateral non-uniformity in the temperature distribution inside the LED chip.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116996798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Failure mechanisms in chip-metallization in power applications 电源应用中芯片金属化的失效机制
C. Durand, M. Klingler, D. Coutellier, H. Naceur
{"title":"Failure mechanisms in chip-metallization in power applications","authors":"C. Durand, M. Klingler, D. Coutellier, H. Naceur","doi":"10.1109/EUROSIME.2014.6813772","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813772","url":null,"abstract":"Degradation of the chip-metallization layer in power electronic packages under Active Power Cycling is still a major reliability concern. During Active Power Cycling tests, the chip acts as a heat source and temperature gradients develop within the package inducing stress and plastic deformation in aluminum metallization. This study is conducted on a power module using a copper clip soldered on the top side of the chip, instead of aluminum wire bonds. Both experiments and simulations are performed, to better understand mechanisms of chip-metallization degradation. In this paper, experimental Power Cycling tests are performed on power packages and a 2D Finite Elements model of MOSFET is used for thermo-mechanical simulation. Modules are monitored during tests and metallographic specimens are made at the end of tests in order to examine changes in the metallization layer. Thermo-mechanical analysis allows us to monitor the evolution of stress and strain in aluminum during power pulses. A study of the sensitivity of various test parameters is also simulated and the influence of those parameters on the mechanical behavior of power metallization is quantified. Knowledge of degradation phenomena gained with simulation helps to improve product design.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114275840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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