B-field characterization and equivalent circuit modeling of a poly-SiGe-MEMS based Xylophone Bar Magnetometer

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2014-04-07 DOI:10.1109/EUROSIME.2014.6813838

M. Farghaly, V. Rochus, X. Rottenberg, U. S. Mohammed, H. Tilmans

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引用次数: 1

Abstract

This paper reports a quantitative characterization of a poly-SiGe MEMS-based Xylophone Bar Magnetometer (XBM), thereby following a novel characterization method that is based on the measurement of the forward/backward transmission gains S21/S21 of the XBM treated as a two-port network. More specifically, this was done through monitoring the absolute amplitude of the resonant peaks of S21 and S12 with changing magnetic induction B. Also, we present for the first time a novel equivalent circuit for the two-port XBM, modeling effectively the electro-magneto-mechanical behavior of the magnetometer. The experimental measurements showed that poly-SiGe XBM is capable of being a linear magnetic sensor in mT range with a sensitivity 0.1dB=mT with an excitation power 5dBm fed to the electrodynamic/electrostatic port and a biasing voltage 14V applied through the sense/drive capacitor.

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基于多sige - mems的木琴棒磁强计的b场表征和等效电路建模

本文报道了一种基于多sige mems的木琴棒磁强计(XBM)的定量表征，从而采用了一种新的表征方法，该方法基于测量XBM作为双端口网络的正向/向后传输增益S21/S21。更具体地说，这是通过监测S21和S12的谐振峰的绝对振幅随磁感应强度b的变化而完成的。此外，我们首次提出了一种新的双端口XBM等效电路，有效地模拟了磁力计的电磁力学行为。实验测量表明，poly-SiGe XBM能够成为mT范围内的线性磁传感器，灵敏度为0.1dB=mT，激励功率为5dBm，通过感测/驱动电容施加14V的偏置电压。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

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