2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献

{"title":"Thermo-mechanical Stress of underfilled 3D IC packaging","authors":"Ming-Han Wang, Mei-Ling Wu","doi":"10.1109/EUROSIME.2014.6813801","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813801","url":null,"abstract":"In recent years, there has been a dramatic proliferation of research concerned with electronic products because of more various functions are integrate into the device and product's size has become smaller. As a result of these functional requirements, through silicon via (TSV) was investigated, this are getting considerable attentions not only from reducing the packaging size but also from shortening the interconnection's distance that can achieve the effect of enhancing signal transmission. TSVs are the vertical hole through the stacked IC, and they are also responsible for transferring signals between the ICs. Thus, they can improve the time delay of the signal transduction and allow better electrical performance than stacked ICs with wire bonding technology. However, a review of the literature indicates that electronic components will be affected easily by environmental factors such as humidity, pressure, and temperature. In general, the stacked ICs with TSV structure is easily affected by temperature changes than others factors since each material have different thermal expansion. In very recently, the stacked IC packaging has been primarily concerned with thermo-mechanical loadings than traditional single IC packaging, which leads some problems such as via cracking, die cracking and interfacial delamination and so on. The above problems not only affect the performance of the device but also lead the device fail. Hence, most of the studies [1-9] are focus on discussing thermal mechanical loading with simulation method. Some of them discuss the relationship between the TSV shape and the stresses [4, 5]. In addition, most of people just build local TSV structure to do their research [4-9]. Although it can save more time but it also increase the error percentage with real situation. And this paper build the three dimensional four layers stacked IC packaging model from Hsieh [1]'s paper which can more close to real situation. And setting the structure to be simulated from the temperature 150°C to -50°C which is as retreat temperature. This paper use ANSYS software which is based on finite element theory in order to reduce time used and save cost, as finite element simulation can provide results more quickly and cheaply than experiments. Moreover, the research mainly analyzes the maximum von-Mises stress in TSVs and micro-bumps. Besides, this paper will sort out geometries and material properties of underfill which will serious affect von-Mises stress value by Design of Experiments (DoE) analysis. Through the DoE analysis, the critical factors are selected as main design factors to reduce the von-Mises stresses. This study can provide the significant information to effectively design the products and increase the reliability. This information can also eliminate the testing time.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116460212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modelling of non-stationary processes in optomechanical thermal microsensors","authors":"A. Kozlov","doi":"10.1109/EUROSIME.2014.6813796","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813796","url":null,"abstract":"An analytical method is developed to determine the frequency response of optomechanical thermal microsensors. The three types of the microsensors are considered: microsensor with the two supporting beams in adjacent corners of the plate; microsensor with the two supporting beams in opposite corners of the plate; microsensor with the four supporting beams. Taking into account the features of each type of the microsensors, in they structures, the domains of modelling are marked out. The domains are divided into the regions with homogeneous parameters. For each region the non-steady-state heat conduction equation is obtained that is solved by means of the time Fourier transform. The heat flux densities between the regions are determined using adjoint boundary conditions in the frequency domain. The analytical expression for the frequency responses of the microsensors is obtained. This method is applied to find the frequency responses, cutoff frequencies and time constants for the three types of optomechanical thermal microsensors. The dependencies of the sensitivity and the time constant on the length of the bi-material section of the beams for the microsensor with the two supporting beams in adjacent corners are obtained.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123457438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Predictive reliability using FEA simulations of power stacked ceramic capacitors for aeronautical applications","authors":"W. Benhadjala, B. Levrier, I. Bord-Majek, L. Béchou, E. Suhir, Y. Ousten","doi":"10.1109/EUROSIME.2014.6813790","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813790","url":null,"abstract":"Viscoplastic finite-element simulation was used to predict reliability of solder joints in a high temperature 4-chips stacked capacitor mounted on a PCB under temperature cycling (-55°C to +125°C, 45min ramps/60min dwells). A three-dimensional (3D) model was built considering the materials properties of a commercial component. Capacitor materials were determined by using scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). Thermomechanical properties, Anand parameters and Darveaux constant of the materials were incorporated into the simulation procedure to evaluate the mechanical strains and the variations in the plastic energy density for the high temperature solder joints of the 4-chips stacked capacitor. The number of cycles before the crack initiation in the solder joint and the number of cycles to failure have been calculated using Darveaux methodology. The obtained results showed that the maximum mechanical strains were localized at the bottom chip. It has been found that the number of cycles to failure exceeded 50,000.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129940290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation of stress distribution in assembled silicon dies and deflection of printed circuit boards","authors":"K. Macurová, P. Angerer, R. Schöngrundner, T. Krivec, M. Morianz, T. Antretter, R. Bermejo, M. Pletz, M. Brizoux, W. Maia","doi":"10.1109/EUROSIME.2014.6813794","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813794","url":null,"abstract":"The knowledge of thermally induced strains created during the assembly in Printed Circuit Boards (PCB) is an important issue for electronic packages. In the assembly process, a thin silicon-chip is attached onto a copper foil. The curing of the adhesive is followed by the cooling down of the assembled structure to room temperature. The different properties of the involved materials and the geometry of the structure induce stresses and deflection in the substrate, which can become critical for the further lamination process. In this work, the chip assembly process is investigated by means of a parametric FE analysis. The aim is to estimate the stress distribution in the silicon die and the deflection (warpage) of the entire architecture based on the assembly conditions. The key material properties (i.e. thermal expansion coefficient (CTE) and elastic constants) of all involved materials were determined as a function of the temperature (process relevant temperature up to 200°C) and used as input for the FE model. Special attention has been given to the determination of the volumetric shrinkage of the adhesive during the curing. The results predicted by the FE model are validated with experimental measurements using an X-ray diffraction method (Rocking-Curve-Technique), which enables the deflection of the attached silicon die to be determined. Good agreement between simulation and experiments is achieved.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130255436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Numerical modeling of flexible actuator for dynamic lighting","authors":"T. Ma, Xueming Li, Jia Wei, G. Zhang, P. Sarro","doi":"10.1109/EUROSIME.2014.6813882","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813882","url":null,"abstract":"We presented the numerical modeling of flexible actuator in the application of dynamic lighting. In order to analyze the Lorentz force exerted on the actuator, we first modeled the surrounding magnetic flux of the magnet. With appropriate layout design, the Lorentz force density distribution was then analyzed. The modeling provides us the overview of the Lorentz force density distribution, and thus the movement of the actuator which is crucial for the dynamic lighting system.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133592786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal characteristics of SiC diode assembly to ceramic substrate","authors":"R. Kisiel, M. Guziewicz, M. Myśliwiec, J. Kraśniewski, W. Janke","doi":"10.1109/EUROSIME.2014.6813818","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813818","url":null,"abstract":"Silicon carbide (SiC) semiconductor diodes are studied for high power and high temperature system applications. Our packaging technology is developing to ensure a working temperature above 300°C for Schottky and PIN diodes. This work presents an investigation on the thermal properties of proposed assembly of SiC die into a ceramic package. Ag micro particles and sintering process were used for the assembly. It was found that thermal resistance of such package is dependent on assembly technology and it is near 3 K/W for Schottky diode in the temperature range from room temperature up to 200°C, and the thermal resistance is in the range 10.5 ÷ 8.7 K/W for PIN diode at temperature in the range from 20°C up to 300°C.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133117424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"FEM stress analysis of various solar module concepts under temperature cycling load","authors":"F. Kraemer, S. Wiese","doi":"10.1109/EUROSIME.2014.6813851","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813851","url":null,"abstract":"The reliability of photovoltaic modules is essential for high electrical performance and a long operational lifetime. Both issues increase the profitability of photovoltaic electricity because these systems require only an initial installation invest. There are several aspects in a PV module which are able to reduce its profitability. An important aspect is the thermo-mechanical stress which is induced by day to night shifts at every day of operation. Since this stress obviously cannot be omitted the PV module set-up should reduce the resulting internal loads to a minimum. This paper analyzes the effects of the thermal induced stresses in three different module constructions. The reliability of photo voltaic modules under thermomechanical loads is tested by the TEC standard 61215. This test method is reproduced in FEM simulations which are able to directly analyze the internal stresses of different PV modules. The investigation presented here applies a classic module assembly for H-patterned cells with a single front glass and a plastic back sheet which is the reference type. Another packaging type for Hpatterned cells is the glass-glass module which replaces the back sheet by a second glass board. Finally there is a novel module type applying back contact solar cells. Tn this module type all electrical interconnections are supported by a substrate which is situated below the solar cells. This assembly is enclosed by a front glass and a plastic back sheet. The different module assemblies are transferred to 3D FE-models and subjected to temperature cycles. The mechanical analyses show that the solar cells are moved towards each other when temperatures decline and vice versa during temperature increase. This forced movement causes stresses and strains in the interconnection structures of the modules. The analyses reveal that those structures which are subjected to high mechanical loads are not supposed to cut the electrical interconnection because a failure may appear only in a small section of the according interconnection structure. Only in case of the glass-glass module the copper ribbons are subjected to high mechanical loads which may result in a complete cut of the series-connected solar cells.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"300 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123197519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electro-thermal characterization of Through-Silicon Vias","authors":"A. Todri-Sanial","doi":"10.1109/EUROSIME.2014.6813859","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813859","url":null,"abstract":"Through-Silicon Vias (TSVs) are the vertial vias that enable three-dimensional integration by providing shorter, faster and denser interconnects. In this work, we investigate their thermal properties and show that TSVs used for power and ground connections can suffer from high thermal dissipations, which can lead to reliability and timing errors. Due to nature of current flow on 3D ICs (i.e. from package to each tier), we show that the TSVs near the package tier endure high current flows and high temperatures which eventually lead to Joule heating and electromigration (EM) phenomena. Such analyses bring forth the importance of power- and thermal-aware TSV placement.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124797567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reliability study on chip capacitor solder joints under thermo-mechanical and vibration loading","authors":"K. Meier, M. Roellig, A. Schiessl, K. Wolter","doi":"10.1109/EUROSIME.2014.6813863","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813863","url":null,"abstract":"In this work we present the results on a reliability study on chip capacitor solder joints. The components were tested under three different loading conditions. First, temperature shock tests were conducted on a set of various chip capacitor components. Tested components were evaluated for the occurred damage and the causing damage mechanisms. Using finite element analysis (FEA) the accumulated solder joint creep strain per cycle was determined and used to establish a life time model based on the Coffin-Manson approach. Second, another set of components was exposed to vibration loading. These components were tested in the as cast and isothermally pre-aged condition. The vibration experiments were accomplished at room and elevated temperature. The evaluation focused on the occurred damage as well as the causing damage mechanisms again. FEA was utilised to determine the maximum von Mises stress of the solder joints. Life time and stress data were merged to define the parameters for a Basquin life time model for the vibration load cases. In a third step sequential experiments were accomplished. Temperature cycling with subsequent vibration loading and vice versa was done. Observed cycles to failure were compared to the results from the temperature shock and vibration experiments. A reduction in crack initiation as well as failure cycle count was observed. The damage mechanism was studied as for the single load experiments. Temperature shock testing was proofed to cause dominant shear loads within the solder joints. Observed cracks appeared to be based on creep deformation. In contrast, vibration causes dominant tensile and compression within the solder joint. The cracks showed a refined grain zone at their boarder pointing to an at least partly plastic deformation cause. Combined loads revealed superposed damage mechanisms. Both pre-ageing before as well as vibration experiments at elevated temperatures significantly enhance the solder joint damage. However, the combination of vibration and temperature cycling proposes the damage process even stronger. Solder joint life time reveals to be significantly shorter after vibration pre-ageing and subsequent temperature cycling tests than after temperature shock experiments.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121776700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling and simulation of a MEMS thermal actuator with polysilicon heater","authors":"D. Dellaert, J. Doutreloigne","doi":"10.1109/EUROSIME.2014.6813800","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813800","url":null,"abstract":"This paper describes the modeling and simulation of a MEMS thermal actuator which is heated by a polysilicon heater. The geometry of the structure was simplified to a one-dimensional structure in order to calculate the temperature profile and the resulting displacement. During the calculations also the stress distribution is obtained. Next to the modeling, the structure was simulated using the finite-element method. As the temperature profile depends on the displacement of the actuator, an iterative simulation approach was adopted. The structures were fabricated and their characteristics showed good agreement with modeled and simulated results.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129367115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}