Thermal characteristics of SiC diode assembly to ceramic substrate

Abstract

Silicon carbide (SiC) semiconductor diodes are studied for high power and high temperature system applications. Our packaging technology is developing to ensure a working temperature above 300°C for Schottky and PIN diodes. This work presents an investigation on the thermal properties of proposed assembly of SiC die into a ceramic package. Ag micro particles and sintering process were used for the assembly. It was found that thermal resistance of such package is dependent on assembly technology and it is near 3 K/W for Schottky diode in the temperature range from room temperature up to 200°C, and the thermal resistance is in the range 10.5 ÷ 8.7 K/W for PIN diode at temperature in the range from 20°C up to 300°C.