2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献_第10页

Analysis of RF-MEMS switches in failure mode: Towards a more robust design RF-MEMS开关失效模式分析:迈向更稳健的设计

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2014-04-07 DOI: 10.1109/EUROSIME.2014.6813812

T. Kuenzig, Tatek Muschol, J. Iannacci, G. Schrag, G. Wachutka

引用次数: 4

Mechanical stress analysis in photovoltaic cells during the string-ribbon interconnection process 光伏电池串带互连过程中的机械应力分析

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2014-04-07 DOI: 10.1109/EUROSIME.2014.6813853

F. Kraemer, J. Seib, E. Peter, S. Wiese

{"title":"Mechanical stress analysis in photovoltaic cells during the string-ribbon interconnection process","authors":"F. Kraemer, J. Seib, E. Peter, S. Wiese","doi":"10.1109/EUROSIME.2014.6813853","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813853","url":null,"abstract":"The paper analyzes the mechanical problems of interconnecting individual solar cells in order to create a photovoltaic module. Modern modules increase their produced electrical power steadily at a constant low voltage, which causes high currents through the interconnecting copper wires, also called copper ribbons. The resistance of the interconnections is crucial, because it has a significant influence on the total module efficiency. However, an increased cross-section of the copper ribbons leads to severe mechanical problems, because the thin silicon solar cells would tend to break more easily. In this study the stresses created during the cell interconnection process are analyzed by 3-D FEM-simulations. These simulations are done by applying the commercial code ANSYS. The geometrical model consists of two adjacent cell quarters which are interconnected by one and a half copper ribbons. The geometrical model has a very fine mesh in critical cell sections in order to enable a result evaluation by path plots. The mechanical load is created by a temperature reduction from the solidification temperature of the lead-containing solder to room temperature. The result evaluation by path plots highlights those cell sections, which are the most critical in the productive tabber-stringer process. These results cannot be found by contour plots since the path plots are able to identity positions with high stress gradients. Due to the dominating compressive load of the silicon after the cooling step it is difficult to find possible crack positions. Applying the path plots big stress difference can be found in very small sections which correlate well with experimentally observed failure positions. Now it is possible to understand the complex nature of failure formation in the silicon solar cells applying this result evaluation method.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"340 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116475588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Correlation of activation energy between LEDs and luminaires in the lumen depreciation test 流明衰减试验中led与灯具激活能的相关性

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2014-04-07 DOI: 10.1109/EUROSIME.2014.6813827

Guangjun Lu, C. Yuan, Xuejun Fan, G. Zhang

引用次数: 3

Improvement of freestanding CMOS-MEMS through detailed stress analysis in metallic layers 通过详细的金属层应力分析改进独立式CMOS-MEMS

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2014-04-07 DOI: 10.1109/EUROSIME.2014.6813834

S. Orellana, B. Arrazat, P. Fornara, C. Rivero, A. Di Giacomo, S. Blayac, K. Inal, P. Montmitonnet

{"title":"Improvement of freestanding CMOS-MEMS through detailed stress analysis in metallic layers","authors":"S. Orellana, B. Arrazat, P. Fornara, C. Rivero, A. Di Giacomo, S. Blayac, K. Inal, P. Montmitonnet","doi":"10.1109/EUROSIME.2014.6813834","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813834","url":null,"abstract":"A freestanding cross-shaped structure designed as a planar rotation stress sensor [1], [2], [3] is manufactured using standard CMOS technology (Complementary Metal-Oxide-Semiconductor). The fabrication process induces thermal residual stresses which result in out-of-plane bending, which degrades the device reliability and precision. To control such movements, the design was studied under stress compensation using a bilayered aluminum (Al) / titanium nitride (TiN) structure. Likewise, a single layer of aluminum was studied, to determine a technological solution, with better compatibility. Fabrication stresses have been measured using Stoney's formula based on bending of full-wafer coatings. The Finite Element Method (FEM) is used to model the effect of these stresses on the geometry after release, and the results are compared with measurements. For this purpose, a comb-shaped structure has been designed to relate residual stress in a freestanding Al-TiN bi-layered structure with its bending. Based on this, conservation or elimination of TiN layer is judged, so that the design remains planar after release. The model is then applied to the movement of the cross-shaped sensor after release, and a second optimization variable is studied for maximum sensitivity: the shape of the hinge between the two arms of the cross.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122474208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Compact thermal modeling of microbolometers 微辐射热计的紧凑热建模

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2014-04-07 DOI: 10.1109/EUROSIME.2014.6813849

M. Janicki, P. Zając, M. Szermer, A. Napieralski

引用次数: 1

CMOS stress sensor for 3D integrated circuits: Thermo-mechanical effects of Through Silicon Via (TSV) on surrounding silicon 用于3D集成电路的CMOS应力传感器:通过硅孔(TSV)对周围硅的热机械效应

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2014-04-07 DOI: 10.1109/EUROSIME.2014.6813808

K. Ewuame, V. Fiori, K. Inal, P. Bouchard, S. Gallois-Garreignot, Sylvain Lionti, C. Tavernier, H. Jaouen

{"title":"CMOS stress sensor for 3D integrated circuits: Thermo-mechanical effects of Through Silicon Via (TSV) on surrounding silicon","authors":"K. Ewuame, V. Fiori, K. Inal, P. Bouchard, S. Gallois-Garreignot, Sylvain Lionti, C. Tavernier, H. Jaouen","doi":"10.1109/EUROSIME.2014.6813808","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813808","url":null,"abstract":"This work aims at determining thermomechanical stresses induced by annealed copper filled Through Silicon Via (TSV) in single crystalline silicon by using MOS (Metal Oxide Semiconductor) rosette sensors. These sensors were specifically designed and embedded. Through the piezoresistive relations, the stress tensor was evaluated by carrying out electrical measurements on test vehicle. The MOS stress sensors would have been needed to be calibrated: first results of the calibration were obtained however, since they were still partial, they were not used to make the bridge from electric to mechanic quantities. Experimental findings were based on the direct calculation of stresses from electrical measurements data and literature piezoresistive coefficients. In order to get only the TSV contribution and to suppress the manufacturing process variability contribution, an optimization calculation was needed. A finite element approach was also adopted to evaluate numerically the stresses induced by TSV. The stress values obtained from the optimization are in the range of the ones obtained by simulation in the sensor area. Thus, it can be stated that the methodology is relevant, and the results will be confirmed by extracting the true piezoresistive coefficients for the embedded MOS. Once calibration performed, the piezoresistive coefficients should enable getting more accurate stress values. At this stage, the quite good agreement between numerical and experimental results seems promising.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129330323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

FEM wire bonding simulation for sensor chip applications 用于传感器芯片的有限元线键合仿真

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2014-04-07 DOI: 10.1109/EUROSIME.2014.6813852

F. Kraemer, S. Wiese

{"title":"FEM wire bonding simulation for sensor chip applications","authors":"F. Kraemer, S. Wiese","doi":"10.1109/EUROSIME.2014.6813852","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813852","url":null,"abstract":"The paper describes a three-dimensional dynamic finite element simulation of the wedge bonding process on a sensor chip design. The stiffness of the die bond connection has a strong influence on the sensitivity and accuracy of sensors. Soft die bonds are preferred in order to decouple the substrate stiffness from the flexibility of the sensor beams. However, a very soft die bond connection may cause trouble during the subsequent wire bonding process because the die is not sufficiently fixed to the substrate which may result in a partial absorption of the ultrasonic energy that is required for the welding of bond wire and pad metallization. The FEM simulations presented in this paper were done by the commercial code LS-Dyna which is capable of high deformation speeds and high plastic deformations. The study investigates the effect of die adhesives with different Young's moduli on the resulting stresses and strains in the bond interface. Based on the simulation results contact forces are evaluated, too, in order to assess the induced ultrasonic energy which is essential for the contact formation. The simulation results show big differences in the resulting force peaks of up to 20 %. The bond pad stresses even differ by up to 70 %. The simulations prove a remarkable influence of the die adhesive stiffness on the mechanical contact loads during the wire bond process.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126306201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Simulation and measurement of pressure dependent Q-factors in NEMS resonators NEMS谐振器中压力相关q因子的仿真与测量

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2014-04-07 DOI: 10.1109/EUROSIME.2014.6813858

J. Manz, G. Schrag, G. Wachutka

引用次数: 0

Accurate prediction of SnAgCu solder joint fatigue of QFP packages for thermal cycling 热循环QFP封装SnAgCu焊点疲劳的准确预测

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2014-04-07 DOI: 10.1109/EUROSIME.2014.6813873

M. Niessner, G. Schuetz, C. Birzer, H. Preu, L. Weiss

引用次数: 6

An analytical model for thermal failure analysis of 3D IC packaging 三维集成电路封装热失效分析的分析模型

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2014-04-07 DOI: 10.1109/EUROSIME.2014.6813841

J. Lan, Mei-Ling Wu

{"title":"An analytical model for thermal failure analysis of 3D IC packaging","authors":"J. Lan, Mei-Ling Wu","doi":"10.1109/EUROSIME.2014.6813841","DOIUrl":"https://doi.org/10.1109/EUROSIME.2014.6813841","url":null,"abstract":"The analytical model for temperature distribution in a multi-die stack with multiple heat sources is developed for calculating mean die temperature of a 3D IC package. The thermal resistance network model is set up based on heat dissipation paths from multi-die to ambient and is a composite of thermal spreading resistance and one-dimensional (1D) thermal resistance. Thermal spreading resistance comprises the majority of the thermal resistance when heat flows in the horizontal direction of the large plate. The present study investigates the role of determining temperature rise compared to thermal resistances intrinsic to the 3D technology, including thermal resistance of bonding layers and through-silicon-vias (TSVs). As the four thinner stacking chips in the 3D package are connected by TSVs and bumps, the Finite Element method (FEM) analysis is used to analyze the thermal management of the 3D Stacked IC package. The simulation model to obtain the multi-die temperature of 3D IC package was built up by ANSYS® APDL. The data comparison between the simulation and the analytical model showed that the analytical model is matched with the simulation model, demonstrating that the analytical model can be used to predict the thermal failure in 3D IC packages accurately. The main point in this paper is to use a simple concept and theoretical resistance network model to improve the thermal failure by redesigning the parameters or materials of the Printed Circuit Board (PCB).","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132388257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5