光伏电池串带互连过程中的机械应力分析

F. Kraemer, J. Seib, E. Peter, S. Wiese
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引用次数: 11

摘要

本文分析了连接单个太阳能电池以创建光伏组件的机械问题。现代模块在恒定的低电压下稳定地增加其产生的电力,从而通过互连的铜线(也称为铜带)产生大电流。互连的电阻是至关重要的,因为它对模块的总效率有重大影响。然而,铜带横截面的增加会导致严重的机械问题,因为薄硅太阳能电池更容易断裂。在本研究中,采用三维有限元模拟分析了细胞连接过程中产生的应力。采用ANSYS商用软件进行了仿真。几何模型由两个相邻的单元组成,它们由一条半铜带相互连接。该几何模型在关键单元截面上具有非常精细的网格,以便通过路径图对结果进行评估。机械负荷是由含铅焊料的凝固温度降至室温而产生的。路径图的结果评价突出了在生产tabber-stringer过程中最关键的细胞切片。这些结果无法通过等高线图找到,因为路径图能够识别具有高应力梯度的位置。由于冷却步骤后硅的压缩载荷占主导地位,因此很难找到可能的裂纹位置。应用路径图可以在非常小的截面上发现较大的应力差,这与实验观察到的破坏位置有很好的相关性。现在,应用这种结果评价方法可以理解硅太阳能电池失效形成的复杂性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mechanical stress analysis in photovoltaic cells during the string-ribbon interconnection process
The paper analyzes the mechanical problems of interconnecting individual solar cells in order to create a photovoltaic module. Modern modules increase their produced electrical power steadily at a constant low voltage, which causes high currents through the interconnecting copper wires, also called copper ribbons. The resistance of the interconnections is crucial, because it has a significant influence on the total module efficiency. However, an increased cross-section of the copper ribbons leads to severe mechanical problems, because the thin silicon solar cells would tend to break more easily. In this study the stresses created during the cell interconnection process are analyzed by 3-D FEM-simulations. These simulations are done by applying the commercial code ANSYS. The geometrical model consists of two adjacent cell quarters which are interconnected by one and a half copper ribbons. The geometrical model has a very fine mesh in critical cell sections in order to enable a result evaluation by path plots. The mechanical load is created by a temperature reduction from the solidification temperature of the lead-containing solder to room temperature. The result evaluation by path plots highlights those cell sections, which are the most critical in the productive tabber-stringer process. These results cannot be found by contour plots since the path plots are able to identity positions with high stress gradients. Due to the dominating compressive load of the silicon after the cooling step it is difficult to find possible crack positions. Applying the path plots big stress difference can be found in very small sections which correlate well with experimentally observed failure positions. Now it is possible to understand the complex nature of failure formation in the silicon solar cells applying this result evaluation method.
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