发布求助
文献互助 智能选刊 最新文献

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)最新文献

筛选
英文 中文
Large area flexible devices based on group-III nitrides 基于iii族氮化物的大面积柔性器件
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528756
H. Fujioka, K. Ueno, A. Kobayashi, J. Ohta
{"title":"Large area flexible devices based on group-III nitrides","authors":"H. Fujioka, K. Ueno, A. Kobayashi, J. Ohta","doi":"10.1109/ICIPRM.2016.7528756","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528756","url":null,"abstract":"Summary form only given. We have fabricated various nitride based devices with the use of newly developed low temperature epitaxial growth technique called PSD and confirmed its applicability for fabrication of nitride devices on large area low cost substrates such as metal foils, mica sheets, and glass. With the use of conventional single crystal wafers, we, firstly, confirmed successful fabrication and operation of various devices such as LEDs, HEMTs, MISFETs, and solar cells. We have found that the low growth temperature is quite advantageous for preparation of high In concentration InGaN films for long wave length LEDs and solar cells. The low growth temperature also allows us to fabricate nitride devices such as RGB LEDs on low cost large area substrates without causing serious interfacial reactions between nitride films and chemically vulnerable substrates.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125047594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spintronics with semiconductor nanowires 自旋电子学与半导体纳米线
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528799
T. Schäpers, S. Heedt, A. Bringer, Isabel Otto, K. Sladek, H. Hardtdegen, D. Grützmacher, W. Prost
{"title":"Spintronics with semiconductor nanowires","authors":"T. Schäpers, S. Heedt, A. Bringer, Isabel Otto, K. Sladek, H. Hardtdegen, D. Grützmacher, W. Prost","doi":"10.1109/ICIPRM.2016.7528799","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528799","url":null,"abstract":"The basic ingredients for spintronics using semiconductor nanowires are discussed. For spin manipulation spin-orbit coupling is employed. In this respect the effect of the Rashba and Dresselhaus contributions are investigated. The strength of spin-orbit coupling is extracted by measuring the weak anti-localization effect and comparing the experimental results to a theoretical model. On nanowires covered with a set of narrow gate fingers, quantized conductance is observed. By analyzing the transconductance the Zeeman spin splitting is determined at various magnetic fields. It is found that the gyromagnetic factor is lowered due to the reduced effect of spin-orbit coupling. Confinement-induced quenching of the orbital motion results in a modified subband-dependent Lande g-factor. For strong confinement a pronounced g-factor enhancement related to Coulomb exchange interaction is reported. Indications for the formation of a helical gap are found, which is relevant for the realization of Majorana states.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128820619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Quantum interference of three LO modes in p-type Ga0.5In0.5P: Contribution of a trigonal phonon mode p型Ga0.5In0.5P中三种LO模式的量子干涉:一个三角声子模式的贡献
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528642
Hironori Sakamoto, B. Ma, K. Morita, Y. Ishitani
{"title":"Quantum interference of three LO modes in p-type Ga0.5In0.5P: Contribution of a trigonal phonon mode","authors":"Hironori Sakamoto, B. Ma, K. Morita, Y. Ishitani","doi":"10.1109/ICIPRM.2016.7528642","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528642","url":null,"abstract":"Electro-magnetic Induced Transparency (EIT) has been studied as a mechanism of lasers without population inversion. Little attention has been given to EIT on phonon systems, while it has a potential of application to EIT and thus THz laser and modulator. Quantum interference of multiple longitudinal optical (LO) phonon modes and the continuum of inter-valence band transition is studied in this report. p-type Ga0.5In0.5P alloy system is studied by Raman spectroscopy. The detailed analysis by spectrum fitting reveals the superposition of characteristic asymmetric profile and the contribution of a trigonal phonon mode due to ordering effect of Ga0.5In0.5P. These results indicate that Ga0.5In0.5P is a possible material of EIT on phonon systems. It is expected that the change of the degree of ordering leads to the control of quantum interference for application of EIT.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121910495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain 具有再生源极/漏极的16nm InGaAs沟道多栅极mosfet的工作
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528830
H. Kinoshita, N. Kise, A. Yukimachi, T. Kanazawa, Y. Miyamoto
{"title":"Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain","authors":"H. Kinoshita, N. Kise, A. Yukimachi, T. Kanazawa, Y. Miyamoto","doi":"10.1109/ICIPRM.2016.7528830","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528830","url":null,"abstract":"We successfully developed fabrication process of 16nm InGaAs channel multi gate MOSFETs with regrown source and drain by using MOVPE. This device showed 707 μA/μm of I<sub>d.max</sub> and 498 μS/μm of g<sub>m.max</sub>. On-off ratio was 10<sup>3</sup> @ V<sub>d</sub> = 0.5V.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116181806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Quantum transport in van der Waals junctions of graphene and 2D materials 石墨烯和二维材料范德华结中的量子输运
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.7567/SSDM.2016.D-1-01
T. Machida
{"title":"Quantum transport in van der Waals junctions of graphene and 2D materials","authors":"T. Machida","doi":"10.7567/SSDM.2016.D-1-01","DOIUrl":"https://doi.org/10.7567/SSDM.2016.D-1-01","url":null,"abstract":"We present our recent experiments in graphene/2D crystal van der Waals junctions. First, we demonstrate that high-quality Josephson junctions can be built by connecting two exfoliated crystal flakes of a layered 2D superconductor. In the vdW junctions of the layered 2D superconductor, current-voltage characteristics showed hysteretic zero-bias current, indicating the under-damped Josephson effect. Application of an in-plane magnetic field induced a periodic modulation of the critical current due to the phase shift in supercurrent. Next, we study quantum Hall effect in twisted bilayer graphene fabricated by stacking two flakes of mechanically-exfoliated graphene with a twisted angle of 0.4-4.0 degrees. In low magnetic fields, the twisted bilayer graphene exhibited quantum Hall plateaus at Landau-level filling factors of 8n+4. In high magnetic fields, quantum Hall plateau developed at Landau-level filling factors of 4n. The observed transition of Landau level degeneracy between eightfold and fourfold is attributed to a topological change of the Fermi surface at van Hove singularity point.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122466758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Flow-rate modulation epitaxy of nonpolar m-plane AlN homoepitaxial layers grown on AlN bulk substrates 非极性m平面AlN同外延层在AlN本体衬底上的速率调制外延
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528771
Junichi Nishinaka, Y. Taniyasu, T. Akasaka, K. Kumakura
{"title":"Flow-rate modulation epitaxy of nonpolar m-plane AlN homoepitaxial layers grown on AlN bulk substrates","authors":"Junichi Nishinaka, Y. Taniyasu, T. Akasaka, K. Kumakura","doi":"10.1109/ICIPRM.2016.7528771","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528771","url":null,"abstract":"We investigated the surface morphologies of nonpolar m-plane AlN homoepitaxial layers grown by the flow-rate modulation epitaxy (FME) method. As source supply sequences, we adopted conventional metal-organic chemical vapor deposition (MOCVD) and three types of FME: group-III-source FME, group-V-source FME, and FME with groups III and V alternated. We found that each type of FME could improve the surface flatness of m-plane AlN compared to the conventional MOCVD. This suggests that FME can enhance adatom migration on the surface. On the other hand, the degree of step bunching and straightness of step edges depended on the type of FME. Thus, the morphological changes of the m-plane AlN depend on the source supply sequences.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121117091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microstructural analysis of Nb-doped anatase TiO2 transparent conductive films by transmission electron microscopy 铌掺杂锐钛矿型TiO2透明导电膜的透射电镜显微结构分析
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528693
D. Ogawa, S. Nakao, K. Morikawa, Y. Hirose, T. Hasegawa
{"title":"Microstructural analysis of Nb-doped anatase TiO2 transparent conductive films by transmission electron microscopy","authors":"D. Ogawa, S. Nakao, K. Morikawa, Y. Hirose, T. Hasegawa","doi":"10.1109/ICIPRM.2016.7528693","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528693","url":null,"abstract":"We investigated microstructures and transport properties of Nb-doped anatase TiO2 (TNO) films deposited by two methods: sputtering and pulsed laser deposition (PLD).We found that working pressure (Pw) of sputtering has a significant influence on both microstructures and transport properties. Cross-sectional observation by transmission electron microscopy revealed that lowered Pw improved homogeneity in the microstructure. This finding indicates that the inhomogeneous microstructure of the sputtered TNO films is not due to sputtering damage but to fluctuation in mass density. A sputtered film deposited at Pw = 0.50 Pa exhibited homogeneous microstructure and high Hall mobility comparable to those of PLD films.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122319766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Continuous-wave operation of ultra-short cavity distributed bragg reflector lasers on Si substrates Si衬底上超短腔分布bragg反射激光器的连续波工作
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528750
K. Takeda, Erina Kanno, T. Fujii, K. Hasebe, Tsuyoshi Yamamoto, T. Kakitsuka, S. Matsuo
{"title":"Continuous-wave operation of ultra-short cavity distributed bragg reflector lasers on Si substrates","authors":"K. Takeda, Erina Kanno, T. Fujii, K. Hasebe, Tsuyoshi Yamamoto, T. Kakitsuka, S. Matsuo","doi":"10.1109/ICIPRM.2016.7528750","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528750","url":null,"abstract":"We have fabricated ultra-short cavity membrane distributed Bragg reflector lasers on SiO2/Si substrate for constructing chip-to-chip optical links. To reduce the power consumption of transmitters, reducing cavity length is important. Since the membrane structure enables us to achieve a large optical confinement factor and a surface grating with a large coupling coefficient, we have successfully reduced cavity length to 10 μm. The device exhibits a threshold current of 0.17 mA with a side-mode suppression ratio of 39.1 dB. We have also demonstrated direct modulation using 25.8-Gbit/s NRZ signal and achieved eye opening with a bias current of 1.8 mA.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127242281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
InAs/Al0.4Ga0.6Sb side gated vertical TFET on GaAs substrate GaAs衬底上的InAs/Al0.4Ga0.6Sb侧门控垂直TFET
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528571
V. Chinni, M. Zaknoune, X. Wallart, L. Desplanque
{"title":"InAs/Al0.4Ga0.6Sb side gated vertical TFET on GaAs substrate","authors":"V. Chinni, M. Zaknoune, X. Wallart, L. Desplanque","doi":"10.1109/ICIPRM.2016.7528571","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528571","url":null,"abstract":"Summary form only given. We report on the fabrication of a side gated vertical tunnel field effect transistor (TFET) with a 570 μA/μm ON current at V<sub>ds</sub>=V<sub>gs</sub>=0.5 V. The device is based on a near broken gap AlGaSb/InAs heterostructure grown on a GaAs substrate thanks to a GaSb accommodation layer. The electrostatic control of the 80 nm InAs channel is obtained by lateral side gates. The trade-off between mesa width and I<sub>ON</sub>/I<sub>OFF</sub> ratio is evidenced.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125987715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vertically graded organic photovoltaic cells using alternative intermittent electrospray co-deposition 采用交替间歇电喷涂共沉积的垂直梯度有机光伏电池
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528817
T. Fukuda, Katsumi Suzuki
{"title":"Vertically graded organic photovoltaic cells using alternative intermittent electrospray co-deposition","authors":"T. Fukuda, Katsumi Suzuki","doi":"10.1109/ICIPRM.2016.7528817","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528817","url":null,"abstract":"We investigated an alternative intermittent electrospray co-deposition method for solution processed-organic photovoltaic cells with the graded active layer. This method uses separated two solutions, which contain poly(3-hexylthiophene-2,5-diyl) (P3HT) and phenyl-C61 butyric acid methyl ester (PCBM), are alternatively deposited by using the pulse high voltage. Thus, the P3HT:PCBM blend thin film can be deposited even though a vacuum free experimental setup. The optimized pulse width was found to be > 6 s to avoid unexpected charge to the adjacent glass capillary, which cases the instable electrospray. The P3HT:PCBM ratio of deposited thin film can be controlled by changing the ratio of pulse width for P3HT and PCBM solutions. Finally, a vertically graded bulk heterojunction structure with P3HT:PCBM was successfully demonstrated, leading to a maximum photoconversion efficiency (PCE) of 3.1%. This value was 1.4-fold compared to the uniformly blended device due to the high carrier collection efficiency.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"165 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127422716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信