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2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)最新文献

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Enhanced spin polarization at n-MnSb(0001)/InP(111) interface n-MnSb(0001)/InP(111)界面自旋极化增强
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528648
C. Ouserigha, Haiyuan Wang, C. Burrows, G. Bell
{"title":"Enhanced spin polarization at n-MnSb(0001)/InP(111) interface","authors":"C. Ouserigha, Haiyuan Wang, C. Burrows, G. Bell","doi":"10.1109/ICIPRM.2016.7528648","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528648","url":null,"abstract":"We studied the electronic and structural properties of the interfaces between the niccolite (n-) polymorph of ferromagnetic MnSb and the binary semiconductor InP along the MnSb(0001)/InP(111) direction. Plane-wave pseudopotential ab-initio electronic structure calculations were used. The Mn-to-P interface becomes 63.0% spin-polarized, much higher than the bulk polarization. The other three possible interfaces for contacts retain their ferromagnetism at the interface. Adhesion energy of the Mn-to-P interface is 63meV/Å, larger than the other terminations, and it has the shortest interlayer bond distance of 2.43 Å. The high interface spin polarization of the favorable Mn-to-P interface is advantageous for spin transport.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114391487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Observation of pn-junction depth in Mg2Si photodiode fabricated by thermal diffusion of Ag acceptor 银受体热扩散制备Mg2Si光电二极管中pn结深度的观察
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528863
H. Udono, N. Hori, T. Akiyama, Yuuma Onizawa, Tsubasa Ootsubo, F. Esaka
{"title":"Observation of pn-junction depth in Mg2Si photodiode fabricated by thermal diffusion of Ag acceptor","authors":"H. Udono, N. Hori, T. Akiyama, Yuuma Onizawa, Tsubasa Ootsubo, F. Esaka","doi":"10.1109/ICIPRM.2016.7528863","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528863","url":null,"abstract":"We have investigated the relationship between the Ag concentration and the pn-junction depth in the Mg2Si pn-junction photodiodes fabricated by thermal diffusion of Ag acceptor. The Ag concentration profiles and pn-junction depth in the samples annealed between 400 and 550 °C for 10min were studied by SIMS and EBIC. We observed two types of lattice diffusions with two different diffusion coefficients of which activation energies were approximately 0.97 and 0.71 eV. By comparing the observed pn-junction depth with the Ag concentration profiles, we determined the actual Ag concentrations at the pn-junction interface for annealed at 400, 450 and 480 °C.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114728943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-speed performance of III-nitride 410 nm ridge laser diode on (202̄1̄) plane for visible light communication (202)平面上iii -氮化物410 nm脊状激光二极管的高速可见光通信性能
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528731
Chang-Mi Lee, Chong Zhang, Daniel L. Becerra, Seungguen Lee, R. Farrell, J. Speck, S. Nakamura, J. Bowers, S. Denbaars
{"title":"High-speed performance of III-nitride 410 nm ridge laser diode on (202̄1̄) plane for visible light communication","authors":"Chang-Mi Lee, Chong Zhang, Daniel L. Becerra, Seungguen Lee, R. Farrell, J. Speck, S. Nakamura, J. Bowers, S. Denbaars","doi":"10.1109/ICIPRM.2016.7528731","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528731","url":null,"abstract":"The modulation characteristics of high-performance In<sub>0.1</sub>Ga<sub>0.9</sub>N/GaN continuous-wave (CW) ridge laser diode were demonstrated. The laser epitaxial structure was grown on (202̅1̅) by metal organic chemical vapor deposition (MOCVD) for high-power CW operation by adopting low-resistance top-side n-type contact design. The threshold current density of 1200 μm long and 3 μm wide cavity was 6.1 kA/cm<sub>2</sub> in CW. Measured slope efficiency of the resonance frequency was 0.3268 GHz/mA<sub>1/2</sub> and calculated differential gain was 2.2 × 10-16 cm<sup>2</sup>. 4.3 GHz of -3 dB bandwidth were obtained and the 10.2 GHz of maximum intrinsic bandwidth have been calculated from the damping factor. 5 Gbit/s data rate was measured by large signal modulation.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124901608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A high efficiency RTD-based sub-THz differential oscillator pair for a spatial power combining array 用于空间功率组合阵列的高效率rtd亚太赫兹差分振荡器对
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528855
Maengkyu Kim, Kyounghoon Yang
{"title":"A high efficiency RTD-based sub-THz differential oscillator pair for a spatial power combining array","authors":"Maengkyu Kim, Kyounghoon Yang","doi":"10.1109/ICIPRM.2016.7528855","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528855","url":null,"abstract":"Summary form only given. A resonant tunneling diode (RTD)-based sub-THz differential oscillator pair for a spatial power combining array is proposed. The fabricated RTD differential oscillator pair shows a radiated output power of 89.3 μW at an oscillation frequency of 683 GHz with a total DC power consumption of 28.4 mW. A high DC-to-RF efficiency of 0.32 % and a power combining efficiency of 92% have been obtained due to the effective power combining using the differential topology and the associated array configuration with low DC power consumption.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121701521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-radiative recombination centers in AlGaN quantum well characterized by two-wavelength excited photoluminescence 双波长激发光致发光表征了AlGaN量子阱中的非辐射复合中心
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528678
M. Julkarnain, T. Fukuda, N. Kamata, H. Hirayama
{"title":"Non-radiative recombination centers in AlGaN quantum well characterized by two-wavelength excited photoluminescence","authors":"M. Julkarnain, T. Fukuda, N. Kamata, H. Hirayama","doi":"10.1109/ICIPRM.2016.7528678","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528678","url":null,"abstract":"Two-wavelength excited photoluminescence, a non-destructive and non-contacting method for defect study has been used to investigate the AlGaN multiple quantum well (MQW) emitting at ~260 nm. We have succeeded to detect the non-radiative recombination (NRR) centers in both wells and barrier layers using a below-gap ex- citation (BGE) light of 1.17 eV. The PL intensity of both well and barrier layers decreases after irradiation of BGE which can be explained by the well-established two-level model. The normalized PL intensity decreases with increasing BGE power density for both cases but more pronounced for the barrier layer. The normalized PL intensity increases for both well and barrier layer's emission with increasing AGE density and becomes saturated at higher excitation due to the fill-up of NRR centers.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121860377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of nanowire growth templates by forming pinholes in SiOx on Si 用SiOx在Si上形成针孔制备纳米线生长模板
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528561
Huan Zhao Ternehall, E. Fadaly, M. Sadeghi
{"title":"Fabrication of nanowire growth templates by forming pinholes in SiOx on Si","authors":"Huan Zhao Ternehall, E. Fadaly, M. Sadeghi","doi":"10.1109/ICIPRM.2016.7528561","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528561","url":null,"abstract":"Summary form only given. InAs nanowire growth is carried out on a thin grainy layer of SiOx on Si (111), utilizing the openings of pinholes in the SiOx layer by isotropic wet etching. SiOx layers with different initial thicknesses were deposited and etched down to different thicknesses, to investigate the influence of the initial layer roughness and the etching depth on the formation of pinholes and thereafter the nanowire growth.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122016699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic structure and electronic states of InAs(Sb)/GaAs submonolayer quantum dots InAs(Sb)/GaAs亚单层量子点的原子结构和电子态
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528664
A. Lenz, Zeno Diemer, Christopher Prohl, D. Quandt, A. Strittmatter, U. W. Pohl, H. Eisele
{"title":"Atomic structure and electronic states of InAs(Sb)/GaAs submonolayer quantum dots","authors":"A. Lenz, Zeno Diemer, Christopher Prohl, D. Quandt, A. Strittmatter, U. W. Pohl, H. Eisele","doi":"10.1109/ICIPRM.2016.7528664","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528664","url":null,"abstract":"Summary form only given. Submonolayer-grown semiconductor nanostructures are promising for high power and high speed laser devices. They are formed by a cycled deposition of the active material with a thickness well below the critical thickness for Stranski-Krastanov transition and well below one monolayer (ML), alternating with several ML thick matrix material. They were successfully implemented in high speed (>25 Gbit/s) vertical-cavity surface emitting lasers operating up to 120°C. In this contribution, the structural changes upon additional supply of Sb are studied on the atomic scale using XSTM. The InAsSb agglomerations show slightly smaller sizes than equivalent submonolayer structures grown without Sb. The structural findings are in close correlation with the different band alignments of the electronic states, showing different behavior for electrons and holes.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122099675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical Properties of nanoporous GaN structure transformed from GaN epitaxial layer GaN外延层转化纳米多孔GaN结构的光学性质
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528721
Chia-Feng Lin, Guo-Yi Shiu, Wei-Ju Hsu
{"title":"Optical Properties of nanoporous GaN structure transformed from GaN epitaxial layer","authors":"Chia-Feng Lin, Guo-Yi Shiu, Wei-Ju Hsu","doi":"10.1109/ICIPRM.2016.7528721","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528721","url":null,"abstract":"A Si-heavy doped GaN:Si epitaxial layer is transformed into a directional nanopipe GaN layer though a laser scribing process and a selectively electrochemical (EC) etching process. InGaN light-emitting diodes (LED) with the treated nanopipe GaN layer had high light extraction efficiency. Directional nanopipe structure is perpendicular to the laser scribing line and guided by an external bias electric field. Wide etching width (560μm) and high lateral etching rate (9.3μm/min) were achieved for forming the nanopipe GaN structure. InGaN LED structure with embedded nanopipe GaN layer can enhance the external quantum efficiency through one-step epitaxial growth process and the selectively EC etching process. Birefringence optical property and low effective refractive index are observed in the directional nanopipe GaN layer. And, the InGaN LED structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors structure had also been demonstrated.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125158051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of semiconductor ridge waveguide lasers for improved temperature characteristics 半导体脊波导激光器的温度特性优化
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528588
Xiang Li, Hong Wang, Z. Qiao, Xin Guo, K. Ang, Chongyang Liu
{"title":"Optimization of semiconductor ridge waveguide lasers for improved temperature characteristics","authors":"Xiang Li, Hong Wang, Z. Qiao, Xin Guo, K. Ang, Chongyang Liu","doi":"10.1109/ICIPRM.2016.7528588","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528588","url":null,"abstract":"Summary form only given. Semiconductor ridge waveguide (RWG) laser fabrication process has been optimized. RWG lasers with different ridge height of 0.39 μm, 0.80 μm, 1.23 μm, 1.55 μm and 1.77 μm were fabricated. All the RWG lasers have the same contact ridge width of 50 μm and cavity length of 1100 μm. The dependence of the ridge height on the temperature performance of these lasers has been systematically investigated. It was found that the optimum ridge height is 1.23 μm, corresponding to an etching depth where all the p-doped layers above the active region were removed. The RWG laser with this ridge height worked up to 100 °C successfully, and also showed the highest characteristic temperature (T0) among all the five group lasers. The T0 became worse when the ridge height extends below the active region. Our study suggests the significance of the optimization of the ridge waveguide to the laser diode performance.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126292170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dielectric breakdown of layered insulator 层状绝缘体的介电击穿
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI: 10.1109/ICIPRM.2016.7528812
K. Nagashio, Y. Hattori, T. Taniguchi, K. Watanabe
{"title":"Dielectric breakdown of layered insulator","authors":"K. Nagashio, Y. Hattori, T. Taniguchi, K. Watanabe","doi":"10.1109/ICIPRM.2016.7528812","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528812","url":null,"abstract":"Hexagonal boron nitride (h-BN), an insulating layered material with a wide band gap, is widely utilized as the substrate and gate insulator to achieve high carrier mobility in layered channel materials, especially graphene. However little study has been conducted on the statistical analysis of the breakdown voltages and the breakdown mechanism. Generally the dielectric breakdown of SiO2, conventional three-dimensional (3D) amorphous oxides is simply explained by a percolation model. It has not been determined whether the dielectric breakdowns of 2D layered materials follow the general breakdown phenomena for 3D amorphous oxides. In this study, the dielectric breakdown process of BN is investigated electrically and mechanically using conductive atomic force microscopy (C-AFM) and proposed a breakdown model for insulating layered material.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129764388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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