{"title":"n-MnSb(0001)/InP(111)界面自旋极化增强","authors":"C. Ouserigha, Haiyuan Wang, C. Burrows, G. Bell","doi":"10.1109/ICIPRM.2016.7528648","DOIUrl":null,"url":null,"abstract":"We studied the electronic and structural properties of the interfaces between the niccolite (n-) polymorph of ferromagnetic MnSb and the binary semiconductor InP along the MnSb(0001)/InP(111) direction. Plane-wave pseudopotential ab-initio electronic structure calculations were used. The Mn-to-P interface becomes 63.0% spin-polarized, much higher than the bulk polarization. The other three possible interfaces for contacts retain their ferromagnetism at the interface. Adhesion energy of the Mn-to-P interface is 63meV/Å, larger than the other terminations, and it has the shortest interlayer bond distance of 2.43 Å. The high interface spin polarization of the favorable Mn-to-P interface is advantageous for spin transport.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Enhanced spin polarization at n-MnSb(0001)/InP(111) interface\",\"authors\":\"C. Ouserigha, Haiyuan Wang, C. Burrows, G. Bell\",\"doi\":\"10.1109/ICIPRM.2016.7528648\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We studied the electronic and structural properties of the interfaces between the niccolite (n-) polymorph of ferromagnetic MnSb and the binary semiconductor InP along the MnSb(0001)/InP(111) direction. Plane-wave pseudopotential ab-initio electronic structure calculations were used. The Mn-to-P interface becomes 63.0% spin-polarized, much higher than the bulk polarization. The other three possible interfaces for contacts retain their ferromagnetism at the interface. Adhesion energy of the Mn-to-P interface is 63meV/Å, larger than the other terminations, and it has the shortest interlayer bond distance of 2.43 Å. The high interface spin polarization of the favorable Mn-to-P interface is advantageous for spin transport.\",\"PeriodicalId\":357009,\"journal\":{\"name\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2016.7528648\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2016.7528648","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Enhanced spin polarization at n-MnSb(0001)/InP(111) interface
We studied the electronic and structural properties of the interfaces between the niccolite (n-) polymorph of ferromagnetic MnSb and the binary semiconductor InP along the MnSb(0001)/InP(111) direction. Plane-wave pseudopotential ab-initio electronic structure calculations were used. The Mn-to-P interface becomes 63.0% spin-polarized, much higher than the bulk polarization. The other three possible interfaces for contacts retain their ferromagnetism at the interface. Adhesion energy of the Mn-to-P interface is 63meV/Å, larger than the other terminations, and it has the shortest interlayer bond distance of 2.43 Å. The high interface spin polarization of the favorable Mn-to-P interface is advantageous for spin transport.