n-MnSb(0001)/InP(111)界面自旋极化增强

C. Ouserigha, Haiyuan Wang, C. Burrows, G. Bell
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引用次数: 1

摘要

我们沿MnSb(0001)/InP(111)方向研究了镍钴晶(n-)多晶铁磁MnSb与二元半导体InP之间界面的电子和结构性质。采用平面波伪势从头计算电子结构。mn -p界面的自旋极化率为63.0%,远高于体极化率。其他三种可能的触点界面在界面上保持其铁磁性。mn - p界面的粘附能为63meV/Å,大于其他端,层间键距最短,为2.43 Å。有利的mn - p界面的高界面自旋极化有利于自旋输运。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Enhanced spin polarization at n-MnSb(0001)/InP(111) interface
We studied the electronic and structural properties of the interfaces between the niccolite (n-) polymorph of ferromagnetic MnSb and the binary semiconductor InP along the MnSb(0001)/InP(111) direction. Plane-wave pseudopotential ab-initio electronic structure calculations were used. The Mn-to-P interface becomes 63.0% spin-polarized, much higher than the bulk polarization. The other three possible interfaces for contacts retain their ferromagnetism at the interface. Adhesion energy of the Mn-to-P interface is 63meV/Å, larger than the other terminations, and it has the shortest interlayer bond distance of 2.43 Å. The high interface spin polarization of the favorable Mn-to-P interface is advantageous for spin transport.
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