Chang-Mi Lee, Chong Zhang, Daniel L. Becerra, Seungguen Lee, R. Farrell, J. Speck, S. Nakamura, J. Bowers, S. Denbaars
{"title":"(202)平面上iii -氮化物410 nm脊状激光二极管的高速可见光通信性能","authors":"Chang-Mi Lee, Chong Zhang, Daniel L. Becerra, Seungguen Lee, R. Farrell, J. Speck, S. Nakamura, J. Bowers, S. Denbaars","doi":"10.1109/ICIPRM.2016.7528731","DOIUrl":null,"url":null,"abstract":"The modulation characteristics of high-performance In<sub>0.1</sub>Ga<sub>0.9</sub>N/GaN continuous-wave (CW) ridge laser diode were demonstrated. The laser epitaxial structure was grown on (202̅1̅) by metal organic chemical vapor deposition (MOCVD) for high-power CW operation by adopting low-resistance top-side n-type contact design. The threshold current density of 1200 μm long and 3 μm wide cavity was 6.1 kA/cm<sub>2</sub> in CW. Measured slope efficiency of the resonance frequency was 0.3268 GHz/mA<sub>1/2</sub> and calculated differential gain was 2.2 × 10-16 cm<sup>2</sup>. 4.3 GHz of -3 dB bandwidth were obtained and the 10.2 GHz of maximum intrinsic bandwidth have been calculated from the damping factor. 5 Gbit/s data rate was measured by large signal modulation.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High-speed performance of III-nitride 410 nm ridge laser diode on (202̄1̄) plane for visible light communication\",\"authors\":\"Chang-Mi Lee, Chong Zhang, Daniel L. Becerra, Seungguen Lee, R. Farrell, J. Speck, S. Nakamura, J. Bowers, S. Denbaars\",\"doi\":\"10.1109/ICIPRM.2016.7528731\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The modulation characteristics of high-performance In<sub>0.1</sub>Ga<sub>0.9</sub>N/GaN continuous-wave (CW) ridge laser diode were demonstrated. The laser epitaxial structure was grown on (202̅1̅) by metal organic chemical vapor deposition (MOCVD) for high-power CW operation by adopting low-resistance top-side n-type contact design. The threshold current density of 1200 μm long and 3 μm wide cavity was 6.1 kA/cm<sub>2</sub> in CW. Measured slope efficiency of the resonance frequency was 0.3268 GHz/mA<sub>1/2</sub> and calculated differential gain was 2.2 × 10-16 cm<sup>2</sup>. 4.3 GHz of -3 dB bandwidth were obtained and the 10.2 GHz of maximum intrinsic bandwidth have been calculated from the damping factor. 5 Gbit/s data rate was measured by large signal modulation.\",\"PeriodicalId\":357009,\"journal\":{\"name\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2016.7528731\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2016.7528731","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-speed performance of III-nitride 410 nm ridge laser diode on (202̄1̄) plane for visible light communication
The modulation characteristics of high-performance In0.1Ga0.9N/GaN continuous-wave (CW) ridge laser diode were demonstrated. The laser epitaxial structure was grown on (202̅1̅) by metal organic chemical vapor deposition (MOCVD) for high-power CW operation by adopting low-resistance top-side n-type contact design. The threshold current density of 1200 μm long and 3 μm wide cavity was 6.1 kA/cm2 in CW. Measured slope efficiency of the resonance frequency was 0.3268 GHz/mA1/2 and calculated differential gain was 2.2 × 10-16 cm2. 4.3 GHz of -3 dB bandwidth were obtained and the 10.2 GHz of maximum intrinsic bandwidth have been calculated from the damping factor. 5 Gbit/s data rate was measured by large signal modulation.
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