InAs/Al0.4Ga0.6Sb side gated vertical TFET on GaAs substrate

Abstract

Summary form only given. We report on the fabrication of a side gated vertical tunnel field effect transistor (TFET) with a 570 μA/μm ON current at V_ds=V_gs=0.5 V. The device is based on a near broken gap AlGaSb/InAs heterostructure grown on a GaAs substrate thanks to a GaSb accommodation layer. The electrostatic control of the 80 nm InAs channel is obtained by lateral side gates. The trade-off between mesa width and I_ON/I_OFF ratio is evidenced.