{"title":"p型Ga0.5In0.5P中三种LO模式的量子干涉:一个三角声子模式的贡献","authors":"Hironori Sakamoto, B. Ma, K. Morita, Y. Ishitani","doi":"10.1109/ICIPRM.2016.7528642","DOIUrl":null,"url":null,"abstract":"Electro-magnetic Induced Transparency (EIT) has been studied as a mechanism of lasers without population inversion. Little attention has been given to EIT on phonon systems, while it has a potential of application to EIT and thus THz laser and modulator. Quantum interference of multiple longitudinal optical (LO) phonon modes and the continuum of inter-valence band transition is studied in this report. p-type Ga0.5In0.5P alloy system is studied by Raman spectroscopy. The detailed analysis by spectrum fitting reveals the superposition of characteristic asymmetric profile and the contribution of a trigonal phonon mode due to ordering effect of Ga0.5In0.5P. These results indicate that Ga0.5In0.5P is a possible material of EIT on phonon systems. It is expected that the change of the degree of ordering leads to the control of quantum interference for application of EIT.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quantum interference of three LO modes in p-type Ga0.5In0.5P: Contribution of a trigonal phonon mode\",\"authors\":\"Hironori Sakamoto, B. Ma, K. Morita, Y. Ishitani\",\"doi\":\"10.1109/ICIPRM.2016.7528642\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electro-magnetic Induced Transparency (EIT) has been studied as a mechanism of lasers without population inversion. Little attention has been given to EIT on phonon systems, while it has a potential of application to EIT and thus THz laser and modulator. Quantum interference of multiple longitudinal optical (LO) phonon modes and the continuum of inter-valence band transition is studied in this report. p-type Ga0.5In0.5P alloy system is studied by Raman spectroscopy. The detailed analysis by spectrum fitting reveals the superposition of characteristic asymmetric profile and the contribution of a trigonal phonon mode due to ordering effect of Ga0.5In0.5P. These results indicate that Ga0.5In0.5P is a possible material of EIT on phonon systems. It is expected that the change of the degree of ordering leads to the control of quantum interference for application of EIT.\",\"PeriodicalId\":357009,\"journal\":{\"name\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2016.7528642\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2016.7528642","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Quantum interference of three LO modes in p-type Ga0.5In0.5P: Contribution of a trigonal phonon mode
Electro-magnetic Induced Transparency (EIT) has been studied as a mechanism of lasers without population inversion. Little attention has been given to EIT on phonon systems, while it has a potential of application to EIT and thus THz laser and modulator. Quantum interference of multiple longitudinal optical (LO) phonon modes and the continuum of inter-valence band transition is studied in this report. p-type Ga0.5In0.5P alloy system is studied by Raman spectroscopy. The detailed analysis by spectrum fitting reveals the superposition of characteristic asymmetric profile and the contribution of a trigonal phonon mode due to ordering effect of Ga0.5In0.5P. These results indicate that Ga0.5In0.5P is a possible material of EIT on phonon systems. It is expected that the change of the degree of ordering leads to the control of quantum interference for application of EIT.
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