D. Ogawa, S. Nakao, K. Morikawa, Y. Hirose, T. Hasegawa
{"title":"铌掺杂锐钛矿型TiO2透明导电膜的透射电镜显微结构分析","authors":"D. Ogawa, S. Nakao, K. Morikawa, Y. Hirose, T. Hasegawa","doi":"10.1109/ICIPRM.2016.7528693","DOIUrl":null,"url":null,"abstract":"We investigated microstructures and transport properties of Nb-doped anatase TiO2 (TNO) films deposited by two methods: sputtering and pulsed laser deposition (PLD).We found that working pressure (Pw) of sputtering has a significant influence on both microstructures and transport properties. Cross-sectional observation by transmission electron microscopy revealed that lowered Pw improved homogeneity in the microstructure. This finding indicates that the inhomogeneous microstructure of the sputtered TNO films is not due to sputtering damage but to fluctuation in mass density. A sputtered film deposited at Pw = 0.50 Pa exhibited homogeneous microstructure and high Hall mobility comparable to those of PLD films.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Microstructural analysis of Nb-doped anatase TiO2 transparent conductive films by transmission electron microscopy\",\"authors\":\"D. Ogawa, S. Nakao, K. Morikawa, Y. Hirose, T. Hasegawa\",\"doi\":\"10.1109/ICIPRM.2016.7528693\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated microstructures and transport properties of Nb-doped anatase TiO2 (TNO) films deposited by two methods: sputtering and pulsed laser deposition (PLD).We found that working pressure (Pw) of sputtering has a significant influence on both microstructures and transport properties. Cross-sectional observation by transmission electron microscopy revealed that lowered Pw improved homogeneity in the microstructure. This finding indicates that the inhomogeneous microstructure of the sputtered TNO films is not due to sputtering damage but to fluctuation in mass density. A sputtered film deposited at Pw = 0.50 Pa exhibited homogeneous microstructure and high Hall mobility comparable to those of PLD films.\",\"PeriodicalId\":357009,\"journal\":{\"name\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2016.7528693\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2016.7528693","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microstructural analysis of Nb-doped anatase TiO2 transparent conductive films by transmission electron microscopy
We investigated microstructures and transport properties of Nb-doped anatase TiO2 (TNO) films deposited by two methods: sputtering and pulsed laser deposition (PLD).We found that working pressure (Pw) of sputtering has a significant influence on both microstructures and transport properties. Cross-sectional observation by transmission electron microscopy revealed that lowered Pw improved homogeneity in the microstructure. This finding indicates that the inhomogeneous microstructure of the sputtered TNO films is not due to sputtering damage but to fluctuation in mass density. A sputtered film deposited at Pw = 0.50 Pa exhibited homogeneous microstructure and high Hall mobility comparable to those of PLD films.