{"title":"GaAs衬底上的InAs/Al0.4Ga0.6Sb侧门控垂直TFET","authors":"V. Chinni, M. Zaknoune, X. Wallart, L. Desplanque","doi":"10.1109/ICIPRM.2016.7528571","DOIUrl":null,"url":null,"abstract":"Summary form only given. We report on the fabrication of a side gated vertical tunnel field effect transistor (TFET) with a 570 μA/μm ON current at V<sub>ds</sub>=V<sub>gs</sub>=0.5 V. The device is based on a near broken gap AlGaSb/InAs heterostructure grown on a GaAs substrate thanks to a GaSb accommodation layer. The electrostatic control of the 80 nm InAs channel is obtained by lateral side gates. The trade-off between mesa width and I<sub>ON</sub>/I<sub>OFF</sub> ratio is evidenced.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InAs/Al0.4Ga0.6Sb side gated vertical TFET on GaAs substrate\",\"authors\":\"V. Chinni, M. Zaknoune, X. Wallart, L. Desplanque\",\"doi\":\"10.1109/ICIPRM.2016.7528571\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. We report on the fabrication of a side gated vertical tunnel field effect transistor (TFET) with a 570 μA/μm ON current at V<sub>ds</sub>=V<sub>gs</sub>=0.5 V. The device is based on a near broken gap AlGaSb/InAs heterostructure grown on a GaAs substrate thanks to a GaSb accommodation layer. The electrostatic control of the 80 nm InAs channel is obtained by lateral side gates. The trade-off between mesa width and I<sub>ON</sub>/I<sub>OFF</sub> ratio is evidenced.\",\"PeriodicalId\":357009,\"journal\":{\"name\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"volume\":\"96 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2016.7528571\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2016.7528571","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InAs/Al0.4Ga0.6Sb side gated vertical TFET on GaAs substrate
Summary form only given. We report on the fabrication of a side gated vertical tunnel field effect transistor (TFET) with a 570 μA/μm ON current at Vds=Vgs=0.5 V. The device is based on a near broken gap AlGaSb/InAs heterostructure grown on a GaAs substrate thanks to a GaSb accommodation layer. The electrostatic control of the 80 nm InAs channel is obtained by lateral side gates. The trade-off between mesa width and ION/IOFF ratio is evidenced.
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